BE800605A - Dispositif memoire a semi-conducteur - Google Patents

Dispositif memoire a semi-conducteur

Info

Publication number
BE800605A
BE800605A BE132004A BE132004A BE800605A BE 800605 A BE800605 A BE 800605A BE 132004 A BE132004 A BE 132004A BE 132004 A BE132004 A BE 132004A BE 800605 A BE800605 A BE 800605A
Authority
BE
Belgium
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
BE132004A
Other languages
English (en)
French (fr)
Inventor
D J Lynes
P T Panousis
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE800605A publication Critical patent/BE800605A/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
BE132004A 1972-06-09 1973-06-07 Dispositif memoire a semi-conducteur BE800605A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26141772A 1972-06-09 1972-06-09

Publications (1)

Publication Number Publication Date
BE800605A true BE800605A (fr) 1973-10-01

Family

ID=22993213

Family Applications (1)

Application Number Title Priority Date Filing Date
BE132004A BE800605A (fr) 1972-06-09 1973-06-07 Dispositif memoire a semi-conducteur

Country Status (12)

Country Link
US (1) US3753248A (it)
JP (1) JPS4963350A (it)
KR (1) KR780000459B1 (it)
BE (1) BE800605A (it)
CA (1) CA981793A (it)
DE (1) DE2328471A1 (it)
FR (1) FR2188238B1 (it)
GB (1) GB1429846A (it)
HK (1) HK45877A (it)
IT (1) IT984672B (it)
NL (1) NL7308042A (it)
SE (1) SE382515B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2348984A1 (de) * 1973-09-28 1975-04-24 Siemens Ag Anordnung mit feldeffekttransistoren
US3916222A (en) * 1974-05-28 1975-10-28 Nat Semiconductor Corp Field effect transistor switching circuit
JPS5185062A (ja) * 1975-01-24 1976-07-26 Hitachi Ltd Yunibaasarukatsupuringu
US4030083A (en) * 1975-04-04 1977-06-14 Bell Telephone Laboratories, Incorporated Self-refreshed capacitor memory cell
GB2179219B (en) * 1985-06-07 1989-04-19 Anamartic Ltd Electrical data storage elements
JP2783579B2 (ja) * 1989-03-01 1998-08-06 株式会社東芝 半導体装置
US5365477A (en) * 1992-06-16 1994-11-15 The United States Of America As Represented By The Secretary Of The Navy Dynamic random access memory device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3354440A (en) * 1965-04-19 1967-11-21 Ibm Nondestructive memory array
US3450967A (en) * 1966-09-07 1969-06-17 Vitautas Balio Tolutis Selenium memory cell containing silver up to 2 atomic percent adjacent the rectifying contact

Also Published As

Publication number Publication date
JPS4963350A (it) 1974-06-19
FR2188238B1 (it) 1976-09-17
GB1429846A (en) 1976-03-31
US3753248A (en) 1973-08-14
DE2328471A1 (de) 1973-12-20
IT984672B (it) 1974-11-20
KR780000459B1 (en) 1978-10-23
SE382515B (sv) 1976-02-02
HK45877A (en) 1977-09-16
NL7308042A (it) 1973-12-11
CA981793A (en) 1976-01-13
FR2188238A1 (it) 1974-01-18

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