CA974152A - Thin layer semi conductor device - Google Patents

Thin layer semi conductor device

Info

Publication number
CA974152A
CA974152A CA154,544A CA154544A CA974152A CA 974152 A CA974152 A CA 974152A CA 154544 A CA154544 A CA 154544A CA 974152 A CA974152 A CA 974152A
Authority
CA
Canada
Prior art keywords
thin layer
conductor device
semi conductor
layer semi
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA154,544A
Other languages
English (en)
Other versions
CA154544S (en
Inventor
Yoshio Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Application granted granted Critical
Publication of CA974152A publication Critical patent/CA974152A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00Hall-effect devices
    • H10N52/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00Hall-effect devices
    • H10N52/80Constructional details
    • H10N52/85Magnetic active materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/005Antimonides of gallium or indium
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/065Gp III-V generic compounds-processing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/122Polycrystalline
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/15Silicon on sapphire SOS
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/169Vacuum deposition, e.g. including molecular beam epitaxy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00Alloys or metallic compositions
    • Y10S420/903Semiconductive

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Physical Vapour Deposition (AREA)
CA154,544A 1971-10-26 1972-10-19 Thin layer semi conductor device Expired CA974152A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46084808A JPS513632B2 (sv) 1971-10-26 1971-10-26

Publications (1)

Publication Number Publication Date
CA974152A true CA974152A (en) 1975-09-09

Family

ID=13841004

Family Applications (1)

Application Number Title Priority Date Filing Date
CA154,544A Expired CA974152A (en) 1971-10-26 1972-10-19 Thin layer semi conductor device

Country Status (12)

Country Link
US (1) US3850685A (sv)
JP (1) JPS513632B2 (sv)
AU (1) AU4801772A (sv)
CA (1) CA974152A (sv)
CH (1) CH541880A (sv)
DE (1) DE2252197A1 (sv)
FR (1) FR2157964A1 (sv)
GB (1) GB1367262A (sv)
IT (1) IT966480B (sv)
NL (1) NL7214481A (sv)
SE (1) SE385784B (sv)
ZA (1) ZA727392B (sv)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3928092A (en) * 1974-08-28 1975-12-23 Bell Telephone Labor Inc Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
JPS53100945A (en) * 1977-02-17 1978-09-02 Nippon Dennetsu Keiki Kk Jet stream solder tank
US4468415A (en) * 1981-03-30 1984-08-28 Asahi Kasei Kogyo Kabushiki Kaisha Indium-antimony complex crystal semiconductor and process for production thereof
US4539178A (en) * 1981-03-30 1985-09-03 Asahi Kasei Kogyo Kabushiki Kaisha Indium-antimony complex crystal semiconductor and process for production thereof
US4399097A (en) * 1981-07-29 1983-08-16 Bell Telephone Laboratories, Incorporated Preparation of III-V materials by reduction
JPS5913385A (ja) * 1982-07-13 1984-01-24 Asahi Chem Ind Co Ltd InAsホ−ル素子
GB8324231D0 (en) * 1983-09-09 1983-10-12 Dolphin Machinery Soldering apparatus
US4740386A (en) * 1987-03-30 1988-04-26 Rockwell International Corporation Method for depositing a ternary compound having a compositional profile

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3441453A (en) * 1966-12-21 1969-04-29 Texas Instruments Inc Method for making graded composition mixed compound semiconductor materials
US3674549A (en) * 1968-02-28 1972-07-04 Pioneer Electronic Corp Manufacturing process for an insb thin film semiconductor element
US3558373A (en) * 1968-06-05 1971-01-26 Avco Corp Infrared detecting materials,methods of preparing them,and intermediates
US3666553A (en) * 1970-05-08 1972-05-30 Bell Telephone Labor Inc Method of growing compound semiconductor films on an amorphous substrate

Also Published As

Publication number Publication date
ZA727392B (en) 1973-06-27
AU4801772A (en) 1974-04-26
SE385784B (sv) 1976-07-26
FR2157964A1 (sv) 1973-06-08
GB1367262A (en) 1974-09-18
IT966480B (it) 1974-02-11
NL7214481A (sv) 1973-05-01
US3850685A (en) 1974-11-26
JPS513632B2 (sv) 1976-02-04
CH541880A (de) 1973-09-15
JPS4850681A (sv) 1973-07-17
DE2252197A1 (de) 1973-05-03

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