CA967459A - Method of producing arsenic selenides and arsenic doped selenium - Google Patents

Method of producing arsenic selenides and arsenic doped selenium

Info

Publication number
CA967459A
CA967459A CA135,805A CA135805A CA967459A CA 967459 A CA967459 A CA 967459A CA 135805 A CA135805 A CA 135805A CA 967459 A CA967459 A CA 967459A
Authority
CA
Canada
Prior art keywords
arsenic
selenides
producing
doped selenium
selenium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA135,805A
Other languages
English (en)
Inventor
Sten T. Henriksson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boliden AB
Original Assignee
Boliden AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boliden AB filed Critical Boliden AB
Application granted granted Critical
Publication of CA967459A publication Critical patent/CA967459A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08207—Selenium-based
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA135,805A 1971-03-12 1972-02-29 Method of producing arsenic selenides and arsenic doped selenium Expired CA967459A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE03226/71A SE356223B (OSRAM) 1971-03-12 1971-03-12

Publications (1)

Publication Number Publication Date
CA967459A true CA967459A (en) 1975-05-13

Family

ID=20261652

Family Applications (1)

Application Number Title Priority Date Filing Date
CA135,805A Expired CA967459A (en) 1971-03-12 1972-02-29 Method of producing arsenic selenides and arsenic doped selenium

Country Status (10)

Country Link
US (1) US3785806A (OSRAM)
JP (1) JPS5511602B1 (OSRAM)
CA (1) CA967459A (OSRAM)
DE (1) DE2210638C3 (OSRAM)
FR (1) FR2128879B1 (OSRAM)
GB (1) GB1391013A (OSRAM)
IT (1) IT953448B (OSRAM)
NL (1) NL172047C (OSRAM)
SE (1) SE356223B (OSRAM)
SU (1) SU976857A3 (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1181614A (en) * 1968-03-19 1970-02-18 Siemens Ag Process for Producing Homogeneously Doped Selenium.
US4008082A (en) * 1973-02-19 1977-02-15 Licentia Patent-Verwaltungs-G.M.B.H. Method for producing an electrophotographic recording material
US4126457A (en) * 1973-05-30 1978-11-21 Xerox Corporation Evaporation technique for producing high temperature photoreceptor alloys
US4049505A (en) * 1974-10-14 1977-09-20 Chatterji Arun K Photoconductors for electrostatic imaging systems
US4414179A (en) * 1981-12-03 1983-11-08 Xerox Corporation Process for making photoreceptors
US4822712A (en) * 1988-04-08 1989-04-18 Xerox Corporation Reduction of selenium alloy fractionation
US4859411A (en) * 1988-04-08 1989-08-22 Xerox Corporation Control of selenium alloy fractionation
US4842973A (en) * 1988-04-08 1989-06-27 Xerox Corporation Vacuum deposition of selenium alloy
US4904559A (en) * 1988-10-24 1990-02-27 Xerox Corporation Processes for suppressing the fractionation of chalcogenide alloys
US4894307A (en) * 1988-11-04 1990-01-16 Xerox Corporation Processes for preparing and controlling the fractionation of chalcogenide alloys
US5002734A (en) * 1989-01-31 1991-03-26 Xerox Corporation Processes for preparing chalcogenide alloys
US5084301A (en) * 1990-09-04 1992-01-28 Xerox Corporation Alloying and coating process

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2863768A (en) * 1955-07-05 1958-12-09 Haloid Xerox Inc Xerographic plate
FR1488186A (fr) * 1965-08-02 1967-07-07 Fuji Photo Film Co Ltd Matériau photosensible pour l'électrophotographie

Also Published As

Publication number Publication date
DE2210638A1 (de) 1972-09-28
GB1391013A (en) 1975-04-16
FR2128879A1 (OSRAM) 1972-10-20
NL172047B (nl) 1983-02-01
NL172047C (nl) 1983-07-01
JPS5511602B1 (OSRAM) 1980-03-26
FR2128879B1 (OSRAM) 1978-03-31
NL7203087A (OSRAM) 1972-09-14
DE2210638B2 (de) 1979-01-04
SE356223B (OSRAM) 1973-05-21
SU976857A3 (ru) 1982-11-23
IT953448B (it) 1973-08-10
US3785806A (en) 1974-01-15
DE2210638C3 (de) 1979-08-30

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