CA965189A - Semiconductor structure using platinel silicide as a schottky barrier diode and method - Google Patents

Semiconductor structure using platinel silicide as a schottky barrier diode and method

Info

Publication number
CA965189A
CA965189A CA159,669A CA159669A CA965189A CA 965189 A CA965189 A CA 965189A CA 159669 A CA159669 A CA 159669A CA 965189 A CA965189 A CA 965189A
Authority
CA
Canada
Prior art keywords
semiconductor structure
schottky barrier
barrier diode
platinel
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA159,669A
Other languages
English (en)
Other versions
CA159669S (en
Inventor
Warren C. Rosvold
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Signetics Corp
Original Assignee
Signetics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Signetics Corp filed Critical Signetics Corp
Application granted granted Critical
Publication of CA965189A publication Critical patent/CA965189A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5893—Mixing of deposited material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CA159,669A 1972-01-03 1972-12-21 Semiconductor structure using platinel silicide as a schottky barrier diode and method Expired CA965189A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21459072A 1972-01-03 1972-01-03

Publications (1)

Publication Number Publication Date
CA965189A true CA965189A (en) 1975-03-25

Family

ID=22799670

Family Applications (1)

Application Number Title Priority Date Filing Date
CA159,669A Expired CA965189A (en) 1972-01-03 1972-12-21 Semiconductor structure using platinel silicide as a schottky barrier diode and method

Country Status (6)

Country Link
JP (1) JPS5348075B2 (enrdf_load_stackoverflow)
CA (1) CA965189A (enrdf_load_stackoverflow)
FR (1) FR2167603B1 (enrdf_load_stackoverflow)
GB (1) GB1410701A (enrdf_load_stackoverflow)
IT (1) IT977986B (enrdf_load_stackoverflow)
NL (1) NL160987C (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60234621A (ja) * 1984-05-07 1985-11-21 照井　ヨシヱ 水切り受台
IT1185964B (it) * 1985-10-01 1987-11-18 Sgs Microelettronica Spa Procedimento e relativa apparecchiatura per realizzare contatti metallo-semiconduttore di tipo ohmico
JPS63257269A (ja) * 1987-04-14 1988-10-25 Fujitsu Ltd 半導体装置のコンタクト形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1808342A1 (de) * 1967-11-15 1970-04-09 Western Electric Co Verfahren zum Herstellen eines Halbleiterbauelementes
US3658489A (en) * 1968-08-09 1972-04-25 Nippon Electric Co Laminated electrode for a semiconductor device

Also Published As

Publication number Publication date
FR2167603A1 (enrdf_load_stackoverflow) 1973-08-24
DE2264322B2 (de) 1977-02-24
FR2167603B1 (enrdf_load_stackoverflow) 1977-02-04
DE2264322A1 (de) 1973-07-19
GB1410701A (en) 1975-10-22
NL160987C (nl) 1979-12-17
NL7217827A (enrdf_load_stackoverflow) 1973-07-05
JPS5348075B2 (enrdf_load_stackoverflow) 1978-12-26
NL160987B (nl) 1979-07-16
IT977986B (it) 1974-09-20
JPS4879979A (enrdf_load_stackoverflow) 1973-10-26

Similar Documents

Publication Publication Date Title
CA1003576A (en) Semiconductor schottky barrier devices
CA992221A (en) Tantalum-gallium arsenide schottky barrier semiconductor device
IT998854B (it) Diodi schottky a barriera
CA923633A (en) Schottky barrier power rectifier
CA992186A (en) Semiconductor photoelectric device
CA919309A (en) Semiconductor diodes
CA1000419A (en) Integratable schottky barrier structure and a method for the fabrication thereof
CA1002208A (en) Semiconductor schottky barrier device
CA965189A (en) Semiconductor structure using platinel silicide as a schottky barrier diode and method
AU459152B2 (en) Schottky barrier diode
CA973978A (en) Schottky barrier semiconductor device
CA985795A (en) Schottky barrier device and circuit application
AU475207B2 (en) Semiconductor devices
CA973977A (en) Schottky barrier diode and method of making the same
CA983176A (en) Semiconductor device having a schottky junction and method of manufacturing same
CA805341A (en) Schottky barrier metal collector transistor
JPS5530893A (en) Schottky barrier diode
IT1002232B (it) Contatti a barriera schottky e metodi per fare i medesimi
CA893923A (en) Schottky barrier diode
CA930073A (en) Schottky barrier diode
CA900623A (en) Schottky diodes
CA896788A (en) Metal-semiconductor diodes
CA906667A (en) Semiconductor device having a lateral transistor
CA888440A (en) Semiconductor device having a schottky junction
CA1026858A (en) Light-emitting semiconductor diodes