CA955156A - Process for the manufacture of a gallium-arsenide crystal from a solution of ga as in ga, doped with silicon and germanium - Google Patents
Process for the manufacture of a gallium-arsenide crystal from a solution of ga as in ga, doped with silicon and germaniumInfo
- Publication number
- CA955156A CA955156A CA104,370A CA104370A CA955156A CA 955156 A CA955156 A CA 955156A CA 104370 A CA104370 A CA 104370A CA 955156 A CA955156 A CA 955156A
- Authority
- CA
- Canada
- Prior art keywords
- germanium
- gallium
- doped
- silicon
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 229910052732 germanium Inorganic materials 0.000 title 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/061—Tipping system, e.g. by rotation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2004849A DE2004849B2 (de) | 1970-02-03 | 1970-02-03 | Verfahren zum Herstellen eines mit Silicium oder Germanium dotierten Galliumarsenidkristalls durch Kristallisation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA955156A true CA955156A (en) | 1974-09-24 |
Family
ID=5761308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA104,370A Expired CA955156A (en) | 1970-02-03 | 1971-02-03 | Process for the manufacture of a gallium-arsenide crystal from a solution of ga as in ga, doped with silicon and germanium |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3756955A (enExample) |
| AT (1) | AT310813B (enExample) |
| CA (1) | CA955156A (enExample) |
| CH (1) | CH558205A (enExample) |
| DE (1) | DE2004849B2 (enExample) |
| FR (1) | FR2078062A5 (enExample) |
| GB (1) | GB1282249A (enExample) |
| NL (1) | NL7101381A (enExample) |
| SE (1) | SE360022B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4371420A (en) * | 1981-03-09 | 1983-02-01 | The United States Of America As Represented By The Secretary Of The Navy | Method for controlling impurities in liquid phase epitaxial growth |
| US5183767A (en) * | 1991-02-14 | 1993-02-02 | International Business Machines Corporation | Method for internal gettering of oxygen in iii-v compound semiconductors |
| US5272373A (en) * | 1991-02-14 | 1993-12-21 | International Business Machines Corporation | Internal gettering of oxygen in III-V compound semiconductors |
-
1970
- 1970-02-03 DE DE2004849A patent/DE2004849B2/de active Pending
-
1971
- 1971-01-27 AT AT66671A patent/AT310813B/de not_active IP Right Cessation
- 1971-01-27 CH CH120271A patent/CH558205A/xx not_active IP Right Cessation
- 1971-02-02 SE SE01278/71A patent/SE360022B/xx unknown
- 1971-02-02 NL NL7101381A patent/NL7101381A/xx unknown
- 1971-02-02 FR FR7103392A patent/FR2078062A5/fr not_active Expired
- 1971-02-02 US US00111853A patent/US3756955A/en not_active Expired - Lifetime
- 1971-02-03 CA CA104,370A patent/CA955156A/en not_active Expired
- 1971-04-19 GB GB20614/71A patent/GB1282249A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH558205A (de) | 1975-01-31 |
| US3756955A (en) | 1973-09-04 |
| DE2004849A1 (de) | 1971-08-19 |
| AT310813B (de) | 1973-10-25 |
| DE2004849B2 (de) | 1975-06-05 |
| FR2078062A5 (enExample) | 1971-11-05 |
| SE360022B (enExample) | 1973-09-17 |
| GB1282249A (en) | 1972-07-19 |
| NL7101381A (enExample) | 1971-08-05 |
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