CA945229A - High speed mos sense amplifier apparatus - Google Patents

High speed mos sense amplifier apparatus

Info

Publication number
CA945229A
CA945229A CA104,274A CA104274A CA945229A CA 945229 A CA945229 A CA 945229A CA 104274 A CA104274 A CA 104274A CA 945229 A CA945229 A CA 945229A
Authority
CA
Canada
Prior art keywords
high speed
sense amplifier
amplifier apparatus
speed mos
mos sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA104,274A
Other languages
English (en)
Inventor
Dale A. Mrazek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Application granted granted Critical
Publication of CA945229A publication Critical patent/CA945229A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
CA104,274A 1970-02-04 1971-02-02 High speed mos sense amplifier apparatus Expired CA945229A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US847470A 1970-02-04 1970-02-04

Publications (1)

Publication Number Publication Date
CA945229A true CA945229A (en) 1974-04-09

Family

ID=21731807

Family Applications (1)

Application Number Title Priority Date Filing Date
CA104,274A Expired CA945229A (en) 1970-02-04 1971-02-02 High speed mos sense amplifier apparatus

Country Status (6)

Country Link
US (1) US3648071A (ja)
JP (1) JPS5330969B1 (ja)
CA (1) CA945229A (ja)
DE (1) DE2103256A1 (ja)
FR (1) FR2080463A5 (ja)
GB (1) GB1349479A (ja)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783389A (en) * 1972-05-31 1974-01-01 Us Army Median frequency generator
GB1467057A (en) * 1973-05-24 1977-03-16 Rca Corp Amplifier with over-current protection
GB1452631A (en) * 1973-06-22 1976-10-13 Honeywell Ltd Signal limiter circuit
US4044341A (en) * 1976-03-22 1977-08-23 Rca Corporation Memory array
US4096398A (en) * 1977-02-23 1978-06-20 National Semiconductor Corporation MOS output buffer circuit with feedback
US4099266A (en) * 1977-02-25 1978-07-04 Data General Corporation Single-chip bi-polar sense amplifier for a data processing system using MOS memory
US4166962A (en) * 1977-08-26 1979-09-04 Data General Corporation Current mode D/A converter
US4159523A (en) * 1977-10-07 1979-06-26 Phillips Petroleum Company Voltage offset network
JPS5525858A (en) * 1978-08-11 1980-02-23 Nec Corp Memory unit
JPS5567235A (en) * 1978-11-14 1980-05-21 Nec Corp Output circuit
JPS5847796B2 (ja) * 1979-05-26 1983-10-25 富士通株式会社 半導体メモリ装置
JPS5856198B2 (ja) * 1980-09-25 1983-12-13 株式会社東芝 半導体記憶装置
JPS57173753U (ja) * 1981-04-27 1982-11-02
US4464590A (en) * 1982-06-23 1984-08-07 National Semiconductor Corporation Memory system current sense amplifier circuit
US4464591A (en) * 1982-06-23 1984-08-07 National Semiconductor Corporation Current difference sense amplifier
JPS6099928U (ja) * 1983-12-14 1985-07-08 第一サイエンス株式会社 遠赤外線美顔器
JPH0783062B2 (ja) * 1985-06-18 1995-09-06 株式会社東芝 マスタ−スライス型半導体装置
JPS62170097A (ja) * 1986-01-21 1987-07-27 Fujitsu Ltd 半導体記憶装置
SE453784B (sv) * 1986-07-04 1988-02-29 Ericsson Telefon Ab L M Krets
US4791312A (en) * 1987-06-08 1988-12-13 Grumman Aerospace Corporation Programmable level shifting interface device
US4816706A (en) * 1987-09-10 1989-03-28 International Business Machines Corporation Sense amplifier with improved bitline precharging for dynamic random access memory
US5049838A (en) * 1989-09-19 1991-09-17 The Boeing Company Minimum intrusion search oscillator for use in feedback loops
DE19955779A1 (de) * 1999-11-19 2001-05-31 Infineon Technologies Ag Speichereinrichtung
US7023243B2 (en) * 2002-05-08 2006-04-04 University Of Southern California Current source evaluation sense-amplifier
US8680911B2 (en) * 2011-03-08 2014-03-25 Honeywell International Inc. High-linearity signal-processing amplifier

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3104358A (en) * 1959-10-05 1963-09-17 Jr William J Heacock Memory circuit with positive and negative limiters
US3320532A (en) * 1963-07-23 1967-05-16 Gen Electric Logarithmic micro-microammeter having field effect transistor in feedback path
US3386053A (en) * 1965-04-26 1968-05-28 Honeywell Inc Signal converter circuits having constant input and output impedances
US3378779A (en) * 1965-04-26 1968-04-16 Honeywell Inc Demodulator circuit with control feedback means
US3435375A (en) * 1965-09-20 1969-03-25 Motorola Inc Controller having fet bridge circuit
US3393369A (en) * 1965-10-22 1968-07-16 Electronic Associates Feedback limiter circuit having voltage gain amplifier
US3502905A (en) * 1967-05-17 1970-03-24 Honeywell Inc Differential amplifier and field effect transistor gates for applying largest of two inputs to output
US3535550A (en) * 1967-07-11 1970-10-20 Bunker Ramo Pulse normalizing expanding or compressing circuit
US3529251A (en) * 1967-09-13 1970-09-15 John R Edwards High speed switching circuit
US3537025A (en) * 1967-11-06 1970-10-27 Bell Telephone Labor Inc Unitary circuit for clamping,amplification and automatic gain control
US3517179A (en) * 1968-06-28 1970-06-23 Honeywell Inc Arithmetic circuits for division and square root extraction with field effect transistor in feedback network of amplifier
US3514635A (en) * 1968-09-18 1970-05-26 Reliance Electric Co Analog computer feedback limiter circuit
US3564430A (en) * 1968-10-30 1971-02-16 Collins Radio Co Linear rectifier with polarity detector

Also Published As

Publication number Publication date
FR2080463A5 (ja) 1971-11-12
US3648071A (en) 1972-03-07
GB1349479A (en) 1974-04-03
JPS5330969B1 (ja) 1978-08-30
DE2103256A1 (de) 1971-08-19

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