CA932481A - Method of diffusing a doping substance into wafers of semiconducting material - Google Patents

Method of diffusing a doping substance into wafers of semiconducting material

Info

Publication number
CA932481A
CA932481A CA119193A CA119193A CA932481A CA 932481 A CA932481 A CA 932481A CA 119193 A CA119193 A CA 119193A CA 119193 A CA119193 A CA 119193A CA 932481 A CA932481 A CA 932481A
Authority
CA
Canada
Prior art keywords
diffusing
wafers
semiconducting material
doping substance
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA119193A
Other languages
English (en)
Other versions
CA119193S (en
Inventor
Dietze Wolfgang
Reuschel Konrad
Suss Manfred
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA932481A publication Critical patent/CA932481A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Packaging Frangible Articles (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CA119193A 1970-07-27 1971-07-27 Method of diffusing a doping substance into wafers of semiconducting material Expired CA932481A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702037173 DE2037173A1 (de) 1970-07-27 1970-07-27 Anordnung zum Eindiffundieren von Dotierungsstoffen in Scheiben aus Halb leitermaterial

Publications (1)

Publication Number Publication Date
CA932481A true CA932481A (en) 1973-08-21

Family

ID=5778005

Family Applications (1)

Application Number Title Priority Date Filing Date
CA119193A Expired CA932481A (en) 1970-07-27 1971-07-27 Method of diffusing a doping substance into wafers of semiconducting material

Country Status (9)

Country Link
JP (1) JPS4915102B1 (ja)
BE (1) BE770550A (ja)
CA (1) CA932481A (ja)
CH (1) CH561082A5 (ja)
DE (1) DE2037173A1 (ja)
FR (1) FR2103051A5 (ja)
GB (1) GB1312226A (ja)
NL (1) NL7107778A (ja)
SE (1) SE385785B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
JPS57143428A (en) * 1981-02-27 1982-09-04 High Frequency Heattreat Co Ltd Induction heating and hardening method

Also Published As

Publication number Publication date
SE385785B (sv) 1976-07-26
FR2103051A5 (ja) 1972-04-07
NL7107778A (ja) 1972-01-31
BE770550A (fr) 1972-01-27
DE2037173A1 (de) 1972-02-03
JPS4915102B1 (ja) 1974-04-12
GB1312226A (en) 1973-04-04
CH561082A5 (ja) 1975-04-30

Similar Documents

Publication Publication Date Title
CA954236A (en) Method of manufacturing a semiconductor device and semiconductor device manufactured by using such a method
CA944869A (en) Diffusion of doping materials into wafers of semi-conductor material
AU500214B2 (en) Method of providing semiconductive material with electrical isolation regions
CA938032A (en) Method of manufacturing a semiconductor device and semiconductor device manufactured by using the method
CA942640A (en) Apparatus for diffusing doping substances into semiconductor material
CA932481A (en) Method of diffusing a doping substance into wafers of semiconducting material
CA997870A (en) Semiconductor device and method of manufacturing the device
AU432312B2 (en) Method of preparing slices of a semiconductor material having discrete doped regions
AU2457071A (en) Method of fabricating a semiconductor device
CA851398A (en) Method of accurately doping a semiconductor material layer
CA933677A (en) Method of manufacturing a semiconductor device
CA853154A (en) Localised diffusion of doping material into a semiconductor surface
CA852177A (en) Localised diffusion of doping material into a semiconductor surface
CA933675A (en) Method of manufacturing a semiconductor device and semiconductor device obtained by using the method
CA892531A (en) Method of diffusing impurity elements into a semiconductor
CA970885A (en) Apparatus for diffusing a dopant into a plurality of semi-conductor wafers
CA851396A (en) Method of manufacturing superconducting material
CA834112A (en) Method and apparatus for the continuous doping of semiconductor materials
AU441897B2 (en) Method of doping a semiconductor body
CA873592A (en) Apparatus for use in the diffusion of a doping substance into a body of semiconductor material
AU459262B2 (en) Method of manufacturing a semiconductor device
CA918302A (en) Method of manufacturing a semiconductor device
CA876395A (en) Method of obtaining low concentration impurity predeposition on a semiconductive wafer
CA714021A (en) Method of manufacturing doped monocrystalline bodies of semiconductive material
CA920281A (en) Method of manufacturing a semiconductor device and semiconductor device obtained by using the method