CA922803A - Data regeneration scheme for stored charge storage - Google Patents
Data regeneration scheme for stored charge storageInfo
- Publication number
- CA922803A CA922803A CA100060A CA100060A CA922803A CA 922803 A CA922803 A CA 922803A CA 100060 A CA100060 A CA 100060A CA 100060 A CA100060 A CA 100060A CA 922803 A CA922803 A CA 922803A
- Authority
- CA
- Canada
- Prior art keywords
- charge storage
- stored charge
- data regeneration
- regeneration scheme
- scheme
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008929 regeneration Effects 0.000 title 1
- 238000011069 regeneration method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US229270A | 1970-01-12 | 1970-01-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA922803A true CA922803A (en) | 1973-03-13 |
Family
ID=21700104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA100060A Expired CA922803A (en) | 1970-01-12 | 1970-12-08 | Data regeneration scheme for stored charge storage |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3646525A (de) |
| CA (1) | CA922803A (de) |
| DE (1) | DE2101180A1 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3727196A (en) * | 1971-11-29 | 1973-04-10 | Mostek Corp | Dynamic random access memory |
| US3737879A (en) * | 1972-01-05 | 1973-06-05 | Mos Technology Inc | Self-refreshing memory |
| US3790961A (en) * | 1972-06-09 | 1974-02-05 | Advanced Memory Syst Inc | Random access dynamic semiconductor memory system |
| US3806898A (en) * | 1973-06-29 | 1974-04-23 | Ibm | Regeneration of dynamic monolithic memories |
| JPS5522640Y2 (de) * | 1973-06-30 | 1980-05-29 | ||
| US3882472A (en) * | 1974-05-30 | 1975-05-06 | Gen Instrument Corp | Data flow control in memory having two device memory cells |
| US3986176A (en) * | 1975-06-09 | 1976-10-12 | Rca Corporation | Charge transfer memories |
| JPH0793009B2 (ja) * | 1984-12-13 | 1995-10-09 | 株式会社東芝 | 半導体記憶装置 |
| TW201503156A (zh) | 2013-07-15 | 2015-01-16 | Zhi-Cheng Xiao | 不需要感測放大器的半導體記憶體 |
-
1970
- 1970-01-12 US US2292A patent/US3646525A/en not_active Expired - Lifetime
- 1970-12-08 CA CA100060A patent/CA922803A/en not_active Expired
-
1971
- 1971-03-12 DE DE19712101180 patent/DE2101180A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2101180C3 (de) | 1980-08-07 |
| US3646525A (en) | 1972-02-29 |
| DE2101180B2 (de) | 1979-11-29 |
| DE2101180A1 (de) | 1971-07-22 |
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