CA2814584A1 - Structures phononiques en nanomaille pour materiaux a faible conductivite thermique et conversion d'energie thermoelectrique - Google Patents

Structures phononiques en nanomaille pour materiaux a faible conductivite thermique et conversion d'energie thermoelectrique Download PDF

Info

Publication number
CA2814584A1
CA2814584A1 CA2814584A CA2814584A CA2814584A1 CA 2814584 A1 CA2814584 A1 CA 2814584A1 CA 2814584 A CA2814584 A CA 2814584A CA 2814584 A CA2814584 A CA 2814584A CA 2814584 A1 CA2814584 A1 CA 2814584A1
Authority
CA
Canada
Prior art keywords
phononic
nanomesh
pitch
free path
mean free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2814584A
Other languages
English (en)
Inventor
Jen-Kan Yu
Slobodan Mitrovic
James R. Heath
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
California Institute of Technology CalTech
Original Assignee
California Institute of Technology CalTech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Institute of Technology CalTech filed Critical California Institute of Technology CalTech
Publication of CA2814584A1 publication Critical patent/CA2814584A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24298—Noncircular aperture [e.g., slit, diamond, rectangular, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Materials Engineering (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Micromachines (AREA)
CA2814584A 2010-10-22 2011-10-20 Structures phononiques en nanomaille pour materiaux a faible conductivite thermique et conversion d'energie thermoelectrique Abandoned CA2814584A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US40578710P 2010-10-22 2010-10-22
US61/405,787 2010-10-22
PCT/US2011/057171 WO2012054777A2 (fr) 2010-10-22 2011-10-20 Structures phononiques en nanomaille pour matériaux à faible conductivité thermique et conversion d'énergie thermoélectrique

Publications (1)

Publication Number Publication Date
CA2814584A1 true CA2814584A1 (fr) 2012-04-26

Family

ID=45971922

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2814584A Abandoned CA2814584A1 (fr) 2010-10-22 2011-10-20 Structures phononiques en nanomaille pour materiaux a faible conductivite thermique et conversion d'energie thermoelectrique

Country Status (8)

Country Link
US (1) US9419198B2 (fr)
EP (1) EP2630669A4 (fr)
JP (1) JP2014501031A (fr)
KR (1) KR20140009182A (fr)
CN (1) CN103180983B (fr)
AU (1) AU2011316946A1 (fr)
CA (1) CA2814584A1 (fr)
WO (1) WO2012054777A2 (fr)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130019918A1 (en) 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
WO2013109729A1 (fr) 2012-01-17 2013-07-25 Silicium Energy, Inc. Systèmes et procédés de fabrication de dispositifs thermoélectriques
US20150017466A1 (en) * 2012-03-09 2015-01-15 Arturo A. Ayon Self-aligned tunable metamaterials
WO2013149205A1 (fr) 2012-03-29 2013-10-03 California Institute Of Technology Structures phoniques et dispositifs et méthodes associés
WO2013161645A1 (fr) * 2012-04-27 2013-10-31 リンテック株式会社 Matériau de conversion thermoélectrique et son procédé de fabrication
US10393885B2 (en) * 2012-06-20 2019-08-27 Battelle Memorial Institute Gamma radiation stand-off detection, tamper detection, and authentication via resonant meta-material structures
EP2864119A2 (fr) 2012-06-20 2015-04-29 Battelle Memorial Institute Fenêtres en métamatériaux bidimensionnels
ES2529266B2 (es) * 2012-07-20 2016-02-09 Universidad Complutense De Madrid Conversor de energía térmica por emisión radiante con efecto voltaico
JP6353447B2 (ja) 2012-08-17 2018-07-04 マトリックス インダストリーズ，インコーポレイテッド 熱電デバイスを形成するためのシステム及び方法
GB201215342D0 (en) * 2012-08-29 2012-10-10 Ibm Thermoelectric elementd
WO2014070795A1 (fr) 2012-10-31 2014-05-08 Silicium Energy, Inc. Procédés de formation d'éléments thermoélectriques
US9291297B2 (en) 2012-12-19 2016-03-22 Elwha Llc Multi-layer phononic crystal thermal insulators
US10283689B2 (en) 2013-04-07 2019-05-07 The Regents Of The University Of Colorado, A Body Corporate Phononic metamaterials comprising atomically disordered resonators
WO2014168894A2 (fr) * 2013-04-07 2014-10-16 The Regents Of The University Of Colorado, A Body Corporate Métamatériaux nanophonnoiques
US10333044B2 (en) 2013-04-07 2019-06-25 The Regents Of The University Of Colorado, A Body Corporate Phononic metamaterials adapted for reduced thermal transport
US9899117B2 (en) * 2013-06-24 2018-02-20 University Of Houston System Metallic nanomesh
US9276190B2 (en) 2013-10-01 2016-03-01 The Pen Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material by modified MOCVD
US9040339B2 (en) 2013-10-01 2015-05-26 The Pen Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material
KR20170026323A (ko) 2014-03-25 2017-03-08 실리시움 에너지, 인크. 열전 디바이스들 및 시스템들
US11118613B2 (en) * 2014-07-28 2021-09-14 The Regents Of The University Of Colorado, A Body Corporate Phononic materials used to control flow behavior
US10830262B2 (en) * 2014-07-28 2020-11-10 The Regents Of The University Of Colorado, A Body Corporate Phononic materials used to control turbulent flow
KR101728937B1 (ko) * 2014-09-05 2017-04-21 고려대학교 산학협력단 나노파이버 열전 발전 모듈, 그 제조방법 및 이를 위한 나노파이버 제조 전기 방사 장치
FR3029355B1 (fr) 2014-12-02 2018-02-02 Stmicroelectronics (Crolles 2) Sas Generateur thermoelectrique
JP6638269B2 (ja) * 2015-09-10 2020-01-29 富士通株式会社 ナノ構造素子及びその製造方法、並びに熱電変換装置
US9857231B2 (en) 2015-11-30 2018-01-02 International Business Machines Corporation Sensors for detecting incident signals having disturbance elements
US10290796B2 (en) 2016-05-03 2019-05-14 Matrix Industries, Inc. Thermoelectric devices and systems
JP6311133B2 (ja) * 2016-06-13 2018-04-18 パナソニックＩｐマネジメント株式会社 赤外線センサ
USD819627S1 (en) 2016-11-11 2018-06-05 Matrix Industries, Inc. Thermoelectric smartwatch
JP2018192534A (ja) * 2017-05-12 2018-12-06 国立大学法人 東京大学 熱流方向性制御構造
CN107578768B (zh) * 2017-08-31 2020-06-16 广东科学技术职业学院 基于声子晶体异质结的声波二极管
JP7232978B2 (ja) * 2017-12-11 2023-03-06 パナソニックＩｐマネジメント株式会社 赤外線センサおよび赤外線センサのボロメータ赤外線受光部を冷却する方法
CN111954936B (zh) * 2018-02-09 2024-06-21 科罗拉多州立大学董事会,公司实体 基于纳米声子超材料的热电设备
CN112313807A (zh) * 2018-04-18 2021-02-02 科罗拉多州立大学董事会公司实体 适于降低的热传输的声子超构材料
JP7145529B2 (ja) * 2018-06-29 2022-10-03 国立研究開発法人産業技術総合研究所 フォノニック材料及びその製造方法
NL2021950B1 (en) * 2018-11-07 2020-05-15 Univ Delft Tech Quantum wavelength converter between a microwave signal and an optical signal
WO2020174733A1 (fr) * 2019-02-28 2020-09-03 パナソニックＩｐマネジメント株式会社 Corps multicouche et corps cristallin
US11211451B2 (en) * 2019-04-29 2021-12-28 Northeastern University Stretchable electronic structures and techniques for the formation thereof
WO2021096580A1 (fr) * 2019-08-24 2021-05-20 The Regents Of The University Of Colorado, A Body Corporate Matériau structural souterrain pour la régulation d'écoulement turbulent
WO2021132359A1 (fr) * 2019-12-28 2021-07-01 伸幸 全 Matériau photonique et son procédé de fabrication
US20230044423A1 (en) * 2019-12-28 2023-02-09 Nobuyuki Zen Phononic material and method for producing same
CN113539922A (zh) * 2020-04-17 2021-10-22 中国科学院苏州纳米技术与纳米仿生研究所 一种半导体复合层及其制作方法
CN111483975A (zh) * 2020-04-20 2020-08-04 北京理工大学 一种热导率可控的具有微纳结构的薄膜制作方法

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3653989A (en) 1970-04-02 1972-04-04 Rca Corp Zn DIFFUSION INTO GAP
JPS6027179B2 (ja) 1975-11-05 1985-06-27 日本電気株式会社 多孔質シリコンの形成方法
US4078945A (en) 1976-05-03 1978-03-14 Mobil Tyco Solar Energy Corporation Anti-reflective coating for silicon solar cells
US5089293A (en) 1984-07-31 1992-02-18 Rosemount Inc. Method for forming a platinum resistance thermometer
US4681657A (en) 1985-10-31 1987-07-21 International Business Machines Corporation Preferential chemical etch for doped silicon
US5139624A (en) 1990-12-06 1992-08-18 Sri International Method for making porous semiconductor membranes
EP0499488B9 (fr) 1991-02-15 2004-01-28 Canon Kabushiki Kaisha Solution d'attaque pour attaquer le silicium poreux, méthode d'attaque utilisant ladite solution, et procédé de préparation d'un composant semi-conducteur utilisant ladite solution
US5206523A (en) 1991-08-29 1993-04-27 Goesele Ulrich M Microporous crystalline silicon of increased band-gap for semiconductor applications
DE69232347T2 (de) 1991-09-27 2002-07-11 Canon Kk Verfahren zur Behandlung eines Substrats aus Silizium
JP3352118B2 (ja) 1992-08-25 2002-12-03 キヤノン株式会社 半導体装置及びその製造方法
DE69330709T2 (de) 1992-12-28 2002-07-11 Canon Kk Blickrichtungsdetektor und Kamera mit diesem Detektor
US6093941A (en) 1993-09-09 2000-07-25 The United States Of America As Represented By The Secretary Of The Navy Photonic silicon on a transparent substrate
US6017811A (en) 1993-09-09 2000-01-25 The United States Of America As Represented By The Secretary Of The Navy Method of making improved electrical contact to porous silicon
TW330313B (en) 1993-12-28 1998-04-21 Canon Kk A semiconductor substrate and process for producing same
US5510633A (en) 1994-06-08 1996-04-23 Xerox Corporation Porous silicon light emitting diode arrays and method of fabrication
US5565084A (en) 1994-10-11 1996-10-15 Qnix Computer Co., Ltd. Electropolishing methods for etching substrate in self alignment
US5990605A (en) 1997-03-25 1999-11-23 Pioneer Electronic Corporation Electron emission device and display device using the same
US20050215063A1 (en) 1997-05-09 2005-09-29 Bergman Eric J System and methods for etching a silicon wafer using HF and ozone
US5981400A (en) 1997-09-18 1999-11-09 Cornell Research Foundation, Inc. Compliant universal substrate for epitaxial growth
US5895223A (en) 1997-12-10 1999-04-20 Industrial Technology Research Institute Method for etching nitride
JP3032826B2 (ja) * 1998-03-05 2000-04-17 工業技術院長 熱電変換材料及びその製造方法
US6313015B1 (en) 1999-06-08 2001-11-06 City University Of Hong Kong Growth method for silicon nanowires and nanoparticle chains from silicon monoxide
CA2404296A1 (fr) 2000-03-22 2001-09-27 University Of Massachusetts Matrices de cylindres nanometriques
CN1251962C (zh) 2000-07-18 2006-04-19 Lg电子株式会社 水平生长碳纳米管的方法和使用碳纳米管的场效应晶体管
US6790785B1 (en) 2000-09-15 2004-09-14 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch porous silicon formation method
WO2002103752A2 (fr) 2000-11-27 2002-12-27 The Board Of Trustees Of The University Of Illinois Decapage chimique avec apport metallique pour l'elaboration de materiaux poreux appartenant aux groupes iii-v
KR100878281B1 (ko) 2001-03-14 2009-01-12 유니버시티 오브 매사츄세츠 나노 제조
EP2273552A3 (fr) 2001-03-30 2013-04-10 The Regents of the University of California Méthodes de fabrication de nanostructures et nanofils et dispositifs ainsi obtenus
CN101009214B (zh) * 2001-03-30 2010-05-19 加利福尼亚大学董事会 纳米结构和纳米线的制造方法及由其制造的器件
US7135728B2 (en) 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
JP4434575B2 (ja) 2002-12-13 2010-03-17 キヤノン株式会社 熱電変換素子及びその製造方法
US20040152240A1 (en) 2003-01-24 2004-08-05 Carlos Dangelo Method and apparatus for the use of self-assembled nanowires for the removal of heat from integrated circuits
US7629531B2 (en) 2003-05-19 2009-12-08 Digital Angel Corporation Low power thermoelectric generator
US7181836B2 (en) 2003-12-19 2007-02-27 General Electric Company Method for making an electrode structure
US20050193742A1 (en) 2004-02-10 2005-09-08 Its Kool, Llc Personal heat control devicee and method
TW200526824A (en) 2004-02-11 2005-08-16 Ind Tech Res Inst Manufacturing method of silicon nanowire
US20050205883A1 (en) * 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
US7115971B2 (en) 2004-03-23 2006-10-03 Nanosys, Inc. Nanowire varactor diode and methods of making same
KR100553317B1 (ko) 2004-04-23 2006-02-20 한국과학기술연구원 실리콘 나노선을 이용한 실리콘 광소자 및 이의 제조방법
US7465871B2 (en) 2004-10-29 2008-12-16 Massachusetts Institute Of Technology Nanocomposites with high thermoelectric figures of merit
US9865790B2 (en) * 2004-12-07 2018-01-09 Toyota Motor Engineering & Manufacturing North America, Inc. Nanostructured bulk thermoelectric material
US7309830B2 (en) 2005-05-03 2007-12-18 Toyota Motor Engineering & Manufacturing North America, Inc. Nanostructured bulk thermoelectric material
US7254953B2 (en) 2005-01-06 2007-08-14 Caterpillar Inc Thermoelectric heat exchange element
US8044293B2 (en) * 2005-02-18 2011-10-25 GM Global Technology Operations LLC High performance thermoelectric nanocomposite device
US7291282B2 (en) 2005-03-01 2007-11-06 Hewlett-Packard Development Company, L.P. Method of fabricating a mold for imprinting a structure
TWI284734B (en) 2005-12-20 2007-08-01 Nat Univ Chung Cheng Sensing apparatus containing noble metal and sensing system and method thereof
US20070277866A1 (en) 2006-05-31 2007-12-06 General Electric Company Thermoelectric nanotube arrays
US20100065810A1 (en) 2006-09-07 2010-03-18 Max-Planck-Gessellschaft Zur Foerderung Der Wissenschaften E.V. Method Of Synthesizing Semiconductor Nanostructures And Nanostructures Synthesized By The Method
US8101449B2 (en) 2007-01-03 2012-01-24 Toyota Motor Engineering & Manufacturing North America, Inc. Process for altering thermoelectric properties of a material
US20080314429A1 (en) 2007-02-09 2008-12-25 Stichting Imec Nederland Method for Thermal Matching of a Thermoelectric Generator with a Heat Source Having High Thermal Resistance and Thermoelectric Generator thus Obtained
EP1976034A3 (fr) 2007-03-29 2011-11-09 Stichting IMEC Nederland Procédé de fabrication d'une thermopile, thermopile ainsi obtenue et générateur thermoélectrique comportant de telles thermopiles
US8641912B2 (en) 2007-05-23 2014-02-04 California Institute Of Technology Method for fabricating monolithic two-dimensional nanostructures
US20100193001A1 (en) 2007-07-09 2010-08-05 Kabushiki Kaisha Toshiba Thermoelectric conversion module, and heat exchanger, thermoelectric temperature control device and thermoelectric generator employing the same
US9209375B2 (en) * 2007-07-20 2015-12-08 California Institute Of Technology Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires
US8227681B2 (en) 2007-07-20 2012-07-24 GM Global Technology Operations LLC Active material apparatus with activating thermoelectric device thereon and method of fabrication
CN101836285B (zh) 2007-08-21 2014-11-12 加州大学评议会 具有高性能热电性质的纳米结构
TW200935635A (en) 2008-02-15 2009-08-16 Univ Nat Chiao Tung Method of manufacturing nanometer-scale thermoelectric device
EP2131406A1 (fr) 2008-06-02 2009-12-09 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Procédé de fabrication d'un générateur thermoélectrique, générateur thermoélectrique portable et vêtement le comportant
WO2010003629A2 (fr) 2008-07-08 2010-01-14 Max-Planck-Gesellschaft Zur Förderung Der Wissenschaft E. V. Dispositif thermoélectrique et procédés de fabrication associés
US8318386B2 (en) 2008-08-07 2012-11-27 Rolith Inc. Fabrication of nanostructured devices
WO2010027962A2 (fr) 2008-09-04 2010-03-11 The Board Of Trustees Of The University Of Illinois Procédé d'obtention d'un nanomotif tridimensionnel dans un semi-conducteur poreux
KR101249292B1 (ko) 2008-11-26 2013-04-01 한국전자통신연구원 열전소자, 열전소자 모듈, 및 그 열전 소자의 형성 방법
TWI380487B (en) 2008-12-12 2012-12-21 Ind Tech Res Inst Thermoelectric device
US8278191B2 (en) 2009-03-31 2012-10-02 Georgia Tech Research Corporation Methods and systems for metal-assisted chemical etching of substrates
US20120160290A1 (en) 2009-05-28 2012-06-28 Gmz Energy, Inc. Thermoelectric system and method of operating same
US8980656B2 (en) 2009-10-21 2015-03-17 The Board Of Trustees Of The University Of Illinois Method of forming an array of high aspect ratio semiconductor nanostructures
US20110114146A1 (en) 2009-11-13 2011-05-19 Alphabet Energy, Inc. Uniwafer thermoelectric modules
US8569740B2 (en) 2010-01-12 2013-10-29 MicroXact Inc. High efficiency thermoelectric materials and devices
TWI472477B (zh) 2010-03-02 2015-02-11 Univ Nat Taiwan 矽奈米結構與其製造方法及應用
WO2011156028A2 (fr) 2010-03-09 2011-12-15 Board Of Regents Of The University Of Texas System Nanostructures poreuses et non poreuses
US9240328B2 (en) 2010-11-19 2016-01-19 Alphabet Energy, Inc. Arrays of long nanostructures in semiconductor materials and methods thereof
US8736011B2 (en) 2010-12-03 2014-05-27 Alphabet Energy, Inc. Low thermal conductivity matrices with embedded nanostructures and methods thereof
US9048004B2 (en) 2010-12-20 2015-06-02 Gmz Energy, Inc. Half-heusler alloys with enhanced figure of merit and methods of making
WO2012087931A2 (fr) 2010-12-20 2012-06-28 Trustees Of Boston College Alliages demi-heusler présentant un meilleur facteur de qualité et procédés de fabrication associés
WO2012088085A1 (fr) 2010-12-21 2012-06-28 Alphabet Energy, Inc. Réseaux de nanostructures remplies comportant des segments saillants et procédés associés
KR101864211B1 (ko) 2010-12-30 2018-06-05 한국전자통신연구원 실리콘 나노선 기반의 열전소자 및 그 제조 방법
US8580100B2 (en) 2011-02-24 2013-11-12 Massachusetts Institute Of Technology Metal deposition using seed layers
US20120282435A1 (en) 2011-03-24 2012-11-08 University Of Massachusetts Nanostructured Silicon with Useful Thermoelectric Properties
US20130019918A1 (en) 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
US20130087180A1 (en) 2011-10-10 2013-04-11 Perpetua Power Source Technologies, Inc. Wearable thermoelectric generator system
WO2013109729A1 (fr) 2012-01-17 2013-07-25 Silicium Energy, Inc. Systèmes et procédés de fabrication de dispositifs thermoélectriques
AU2013212087A1 (en) 2012-01-25 2014-08-07 Alphabet Energy, Inc. Modular thermoelectric units for heat recovery systems and methods thereof
JP6353447B2 (ja) 2012-08-17 2018-07-04 マトリックス インダストリーズ，インコーポレイテッド 熱電デバイスを形成するためのシステム及び方法
WO2014070795A1 (fr) 2012-10-31 2014-05-08 Silicium Energy, Inc. Procédés de formation d'éléments thermoélectriques
US20140326287A1 (en) 2013-05-02 2014-11-06 Perpetua Power Source Technologies, Inc. Wearable thermoelectric generator assembly and method of manufacturing same
US10182937B2 (en) 2013-10-11 2019-01-22 Embr Labs Inc. Methods and apparatuses for manipulating temperature
US20150162517A1 (en) 2013-12-06 2015-06-11 Sridhar Kasichainula Voltage generation across temperature differentials through a flexible thin film thermoelectric device
JP2017512606A (ja) 2014-03-03 2017-05-25 フィジオキュー インコーポレイテッドＰｈｙｓｉｏｃｕｅ， Ｉｎｃ． 片頭痛と他の頭痛の治療の方法
KR20170026323A (ko) 2014-03-25 2017-03-08 실리시움 에너지, 인크. 열전 디바이스들 및 시스템들

Also Published As

Publication number Publication date
US20120097204A1 (en) 2012-04-26
US9419198B2 (en) 2016-08-16
WO2012054777A2 (fr) 2012-04-26
CN103180983A (zh) 2013-06-26
WO2012054777A3 (fr) 2012-08-02
EP2630669A4 (fr) 2014-04-23
AU2011316946A1 (en) 2013-05-09
JP2014501031A (ja) 2014-01-16
EP2630669A2 (fr) 2013-08-28
KR20140009182A (ko) 2014-01-22
CN103180983B (zh) 2016-01-13

Similar Documents

Publication Publication Date Title
US9419198B2 (en) Nanomesh phononic structures for low thermal conductivity and thermoelectric energy conversion materials
Yu et al. Reduction of thermal conductivity in phononic nanomesh structures
US9595653B2 (en) Phononic structures and related devices and methods
US8508370B1 (en) Synthetic thermoelectric materials comprising phononic crystals
US8536440B2 (en) Semiconductor nanowire thermoelectric materials and devices, and processes for producing same
Andrews et al. Atomic-level control of the thermoelectric properties in polytypoid nanowires
Bourgeois et al. Reduction of phonon mean free path: From low-temperature physics to room temperature applications in thermoelectricity
TWI462354B (zh) 熱電材料及其製造方法以及使用此熱電材料之熱電轉換模組
US20140329389A1 (en) Bulk nano-ribbon and/or nano-porous structures for thermoelectric devices and methods for making the same
Fonseca et al. Smart integration of silicon nanowire arrays in all-silicon thermoelectric micro-nanogenerators
Swinkels et al. Nanowires for heat conversion
Gadea et al. Semiconductor nanowires for thermoelectric generation
Li et al. Thermal transport in nanostructured solid-state cooling devices
US20140060601A1 (en) Thermoelectric elements
Li Thermal transport in individual nanowires and nanotubes
Curtin et al. Thermoelectric properties of silicon nanowire array and spin-on glass composites fabricated with CMOS-compatible techniques
Yoo et al. Enhanced thermoelectric figure of merit in highly-doped silicon nanowires via a corrugated surface modulation
WO2022239610A1 (fr) Capteur de type thermopile et réseau de capteurs
NOMURA Phonon Engineering and Application to Thermoelectrics
KR102151310B1 (ko) 스캘럽 구조를 가지는 수직 나노선 어레이를 포함하는 열전소자 및 이의 제조방법
Rodichkina Electrical and thermal properties of silicon nanowire arrays
Wang Thermal Characterization of Heterojunction Interfaces and Nanoporous Si Thin Films
Yoo et al. High Thermoelectric Figure of Merit in Silicon Nanowires Via a Corrugated Surface Modulation
Nomura et al. THERMOPHYSICAL PROPERTY OF POLY-Si PHONONIC CRYSTALS FOR THERMOELECTRICS
Seol Thermal and thermoelectric measurements of silicon nanoconstrictions, supported graphene, and indium antimonide nanowires

Legal Events

Date Code Title Description
FZDE Discontinued

Effective date: 20171020