CA2700013C - Gate drive circuitry for non-isolated gate semiconductor devices - Google Patents

Gate drive circuitry for non-isolated gate semiconductor devices Download PDF

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Publication number
CA2700013C
CA2700013C CA2700013A CA2700013A CA2700013C CA 2700013 C CA2700013 C CA 2700013C CA 2700013 A CA2700013 A CA 2700013A CA 2700013 A CA2700013 A CA 2700013A CA 2700013 C CA2700013 C CA 2700013C
Authority
CA
Canada
Prior art keywords
semiconductor device
circuitry
gate drive
gate
drive circuitry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CA2700013A
Other languages
English (en)
French (fr)
Other versions
CA2700013A1 (en
Inventor
Antonio Caiafa
Jeffrey Joseph Nasadoski
John Stanley Glaser
Juan Antonio Sabate
Richard Alfred Beaupre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of CA2700013A1 publication Critical patent/CA2700013A1/en
Application granted granted Critical
Publication of CA2700013C publication Critical patent/CA2700013C/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Landscapes

  • Power Conversion In General (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)
CA2700013A 2009-04-27 2010-04-15 Gate drive circuitry for non-isolated gate semiconductor devices Active CA2700013C (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US17320109P 2009-04-27 2009-04-27
US61/173,201 2009-04-27
US12/495,048 US7915944B2 (en) 2009-04-27 2009-06-30 Gate drive circuitry for non-isolated gate semiconductor devices
US12/495,048 2009-06-30

Publications (2)

Publication Number Publication Date
CA2700013A1 CA2700013A1 (en) 2010-10-27
CA2700013C true CA2700013C (en) 2012-10-09

Family

ID=42991589

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2700013A Active CA2700013C (en) 2009-04-27 2010-04-15 Gate drive circuitry for non-isolated gate semiconductor devices

Country Status (5)

Country Link
US (1) US7915944B2 (https=)
JP (1) JP5010708B2 (https=)
CA (1) CA2700013C (https=)
DE (1) DE102010016611B4 (https=)
GB (1) GB2469914B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2447988B1 (en) * 2010-11-02 2015-05-06 GE Energy Power Conversion Technology Limited Power electronic device with edge passivation
US8625743B1 (en) 2011-04-28 2014-01-07 General Electric Company Inverse pulse control for eddy current abatement
US8896182B2 (en) 2012-04-05 2014-11-25 General Electric Corporation System for driving a piezoelectric load and method of making same
FR2990312B1 (fr) * 2012-05-03 2015-05-15 Alstom Transport Sa Un dispositif comportant un composant electronique avec une grande vitesse de commutation
US8958217B2 (en) 2012-06-15 2015-02-17 General Electric Company System for driving a piezoelectric load and method of making same
US9389288B2 (en) 2012-09-14 2016-07-12 General Electric Company System and method for maintaining soft switching condition in a gradient coil driver circuit
US8917135B2 (en) 2013-05-14 2014-12-23 Infineon Technologies Austria Ag Circuit with a plurality of diodes and method for controlling such a circuit
US9231565B2 (en) 2013-05-14 2016-01-05 Infineon Technologies Austria Ag Circuit with a plurality of bipolar transistors and method for controlling such a circuit

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62144564A (ja) * 1985-12-18 1987-06-27 Fuji Electric Co Ltd 静電誘導形トランジスタのゲ−ト駆動回路
JP3334290B2 (ja) * 1993-11-12 2002-10-15 株式会社デンソー 半導体装置
US5532896A (en) * 1994-04-26 1996-07-02 Coussens; Eugene Distributed silicon controlled rectifiers for ESD protection
US6628564B1 (en) * 1998-06-29 2003-09-30 Fujitsu Limited Semiconductor memory device capable of driving non-selected word lines to first and second potentials
US6392859B1 (en) * 1999-02-14 2002-05-21 Yazaki Corporation Semiconductor active fuse for AC power line and bidirectional switching device for the fuse
US6515534B2 (en) * 1999-12-30 2003-02-04 Intel Corporation Enhanced conductivity body biased PMOS driver
US6650520B2 (en) * 2001-10-26 2003-11-18 Koninklijke Philips Electronics N.V. Power supply reverse bias protection circuit for protecting both analog and digital devices coupled thereto
DE10212869A1 (de) * 2002-03-22 2003-09-18 Siemens Ag Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor
DE10212863B4 (de) * 2002-03-22 2006-06-08 Siemens Ag Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor
KR101042148B1 (ko) * 2004-05-08 2011-06-16 페어차일드코리아반도체 주식회사 기판 순환 전류가 억제되는 전력용 반도체 소자 및 그 제조 방법
TWI258261B (en) * 2004-05-18 2006-07-11 Richtek Techohnology Corp JFET driving circuit applied to DC/DC converter and method thereof
JP4843253B2 (ja) * 2005-05-23 2011-12-21 株式会社東芝 電力用半導体装置
JP4600180B2 (ja) * 2005-06-27 2010-12-15 株式会社日立製作所 電界効果型パワー半導体素子を用いた半導体回路
DE102005030831B3 (de) 2005-07-01 2006-06-14 Siemens Ag Gate-Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor
US20070146020A1 (en) * 2005-11-29 2007-06-28 Advanced Analogic Technologies, Inc High Frequency Power MESFET Gate Drive Circuits
JP4804142B2 (ja) * 2005-12-21 2011-11-02 東洋電機製造株式会社 高速ゲート駆動回路
DE102006025374B4 (de) * 2006-05-31 2008-03-13 Technische Universität Chemnitz Sperrschicht-Feldeffekttransistor-Anordnung und Verfahren zum Ansteuern eines Sperrschicht-Feldeffekttransistors
US20080054984A1 (en) * 2006-08-31 2008-03-06 International Rectifier Corporation High voltage gate driver ic with ramp driver
US7782118B2 (en) * 2007-04-30 2010-08-24 Northrop Grumman Systems Corporation Gate drive for wide bandgap semiconductor device
TW200903244A (en) * 2007-05-03 2009-01-16 Dsm Solutions Inc Method and system for adaptive power management
US7851947B2 (en) * 2007-11-05 2010-12-14 Qualcomm, Incorporated Methods and apparatuses for selectable voltage supply
TWI357211B (en) * 2008-04-18 2012-01-21 Realtek Semiconductor Corp Leakage current preventing circuit and semiconduct
JP5258490B2 (ja) * 2008-10-02 2013-08-07 ルネサスエレクトロニクス株式会社 半導体集積回路及びそれを用いたｉｃカード
JP2010129768A (ja) * 2008-11-27 2010-06-10 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
GB2469914A (en) 2010-11-03
CA2700013A1 (en) 2010-10-27
GB2469914B (en) 2012-04-04
DE102010016611B4 (de) 2012-05-31
US20100271081A1 (en) 2010-10-28
US7915944B2 (en) 2011-03-29
JP5010708B2 (ja) 2012-08-29
GB201006917D0 (en) 2010-06-09
DE102010016611A1 (de) 2010-10-28
JP2010259324A (ja) 2010-11-11

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