CA2514679A1 - Amplificateur de puissance a haut rendement a plusieurs modes de puissance - Google Patents
Amplificateur de puissance a haut rendement a plusieurs modes de puissance Download PDFInfo
- Publication number
- CA2514679A1 CA2514679A1 CA002514679A CA2514679A CA2514679A1 CA 2514679 A1 CA2514679 A1 CA 2514679A1 CA 002514679 A CA002514679 A CA 002514679A CA 2514679 A CA2514679 A CA 2514679A CA 2514679 A1 CA2514679 A1 CA 2514679A1
- Authority
- CA
- Canada
- Prior art keywords
- power
- matching unit
- impedance matching
- power mode
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7239—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers and shunting lines by one or more switch(es)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
La présente invention concerne un amplificateur de puissance équipant un terminal de radiocommunications, et plus particulièrement un amplificateur de puissance à haut rendement capable d'amplifier à haut rendement la puissance selon divers niveaux de puissance de sortie, sans utiliser de circuits de commutation en dérivation. L'amplificateur de puissance à haut rendement de l'invention permet d'amplifier divers niveaux de puissance, sans utiliser de circuits de commutation en dérivation, ce qui permet de résoudre les problèmes rencontrés dans le cas des amplificateurs de puissance multimodes selon l'état de la technique, et notamment les pertes de puissance provoquée par les circuits de commutation en dérivation, l'augmentation de taille de l'amplificateur de puissance, et la perte de compétitivité en matière de prix. En l'occurrence, l'amplificateur de puissance à haut rendement de la présente invention réduit la perte de courant continu en mode basse puissance, ce qui permet d'améliorer le rendement de la fonction d'ajout de puissance de l'amplificateur de puissance.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0000208 | 2003-01-03 | ||
KR10-2003-0000208A KR100518938B1 (ko) | 2003-01-03 | 2003-01-03 | 고효율 다중 모드 전력 증폭 장치 |
PCT/KR2003/000020 WO2004062095A1 (fr) | 2003-01-03 | 2003-01-07 | Amplificateur de puissance a haut rendement a plusieurs modes de puissance |
Publications (1)
Publication Number | Publication Date |
---|---|
CA2514679A1 true CA2514679A1 (fr) | 2004-07-22 |
Family
ID=36094029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002514679A Abandoned CA2514679A1 (fr) | 2003-01-03 | 2003-01-07 | Amplificateur de puissance a haut rendement a plusieurs modes de puissance |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1586162A4 (fr) |
JP (1) | JP2006512847A (fr) |
KR (1) | KR100518938B1 (fr) |
CN (1) | CN100547910C (fr) |
AU (1) | AU2003201928A1 (fr) |
CA (1) | CA2514679A1 (fr) |
WO (1) | WO2004062095A1 (fr) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100757706B1 (ko) * | 2004-03-05 | 2007-09-13 | 아바고테크놀로지스코리아 주식회사 | 선택적 전압 제어를 이용한 고효율 바이패스 스위칭 다중모드 전력 증폭 장치 |
KR100749932B1 (ko) * | 2004-03-05 | 2007-08-16 | 아바고테크놀로지스코리아 주식회사 | 바이패스 스위치를 사용하지 않는 다중 전력 모드 전력증폭 장치 |
GB2440485B (en) * | 2005-04-27 | 2009-06-03 | Paragon Comm Ltd | Transformer-capacitor enhancement circuitry for power amplifiers |
KR100681496B1 (ko) * | 2005-06-01 | 2007-02-12 | 한국과학기술원 | 전력 증폭기 |
US7479827B2 (en) * | 2006-03-21 | 2009-01-20 | Fairchild Semiconductor Corporation | Multi-mode power amplifier with high efficiency under backoff operation |
US8102205B2 (en) * | 2009-08-04 | 2012-01-24 | Qualcomm, Incorporated | Amplifier module with multiple operating modes |
CN101917166B (zh) * | 2010-07-28 | 2012-09-19 | 锐迪科创微电子(北京)有限公司 | 可配置射频功率放大器及包含该放大器的射频发射前端模块 |
US8237501B2 (en) * | 2010-09-09 | 2012-08-07 | Mks Instruments, Inc. | Power amplifier with transistor input mismatching |
WO2012053086A1 (fr) * | 2010-10-21 | 2012-04-26 | 三菱電機株式会社 | Amplificateur avec commutation du mode de sortie |
KR101771720B1 (ko) | 2011-05-26 | 2017-08-28 | 삼성전기주식회사 | 다중 모드 전력 증폭기 |
KR101208274B1 (ko) * | 2011-09-23 | 2012-12-05 | 삼성전기주식회사 | 다중 모드 전력 증폭기 |
CN103178790B (zh) * | 2011-12-26 | 2018-02-06 | Qorvo美国公司 | 多模射频放大装置 |
CN102437819A (zh) * | 2011-12-31 | 2012-05-02 | 三维通信股份有限公司 | 一种大动态级联Doherty功率放大器 |
CN102983822A (zh) * | 2012-09-18 | 2013-03-20 | 上海集成电路研发中心有限公司 | 一种功率放大器 |
TWI492549B (zh) | 2012-10-09 | 2015-07-11 | Realtek Semiconductor Corp | 多模式功率放大電路、多模式無線發射模組及其方法 |
CN103780209B (zh) * | 2012-10-22 | 2017-04-12 | 瑞昱半导体股份有限公司 | 多模式功率放大电路、多模式无线发射模块及其方法 |
US8981852B2 (en) * | 2012-11-12 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Providing an integrated directional coupler in a power amplifier |
KR101452063B1 (ko) | 2012-12-10 | 2014-10-16 | 삼성전기주식회사 | 프론트 엔드 모듈 |
CN105024651B (zh) * | 2014-04-29 | 2019-03-15 | 瑞昱半导体股份有限公司 | 射频功率放大器与提高功率附加效率及线性度的方法 |
US9853603B2 (en) * | 2014-11-14 | 2017-12-26 | Microsoft Technology Licensing, Llc | Power amplifier for amplifying radio frequency signal |
KR102105449B1 (ko) * | 2017-09-11 | 2020-05-29 | 한국과학기술원 | 5g 이동통신 및 레이더용 빔포밍 회로 |
KR102385164B1 (ko) * | 2017-09-18 | 2022-04-12 | 삼성전자주식회사 | 서로 다른 표준의 무선 신호를 전송하는 송신 장치 및 송수신 장치 |
CN109104671B (zh) * | 2018-08-24 | 2020-11-20 | 林汉民 | 一种音响功率放大器输出级电路 |
CN111446929A (zh) * | 2020-04-01 | 2020-07-24 | 锐石创芯(深圳)科技有限公司 | 一种射频功率放大器及控制方法 |
CN111769840B (zh) * | 2020-06-04 | 2022-03-29 | 广州慧智微电子股份有限公司 | 具有多种工作模式的射频信号处理电路和射频前端单元 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06103809B2 (ja) * | 1988-06-10 | 1994-12-14 | 三菱電機株式会社 | 増幅回路 |
FI81931C (fi) * | 1989-05-12 | 1990-12-10 | Nokia Mobira Oy | Foerfarande foer alstring av laoga effektnivaoer i saendaren av en radiotelefon. |
JPH06303154A (ja) * | 1993-04-19 | 1994-10-28 | Oki Electric Ind Co Ltd | 送信機における送信電力制御方式 |
US5541554A (en) * | 1995-03-06 | 1996-07-30 | Motorola, Inc. | Multi-mode power amplifier |
JPH09148852A (ja) * | 1995-11-24 | 1997-06-06 | Matsushita Electric Ind Co Ltd | 送信出力可変装置 |
US6205318B1 (en) * | 1997-04-07 | 2001-03-20 | Gateway 2000, Inc. | Power management controller for computer system |
US6069526A (en) * | 1998-08-04 | 2000-05-30 | Qualcomm Incorporated | Partial or complete amplifier bypass |
US6487419B1 (en) * | 1998-08-06 | 2002-11-26 | Ericsson Inc. | Systems and methods for management of current consumption and performance in a receiver down converter of a wireless device |
US6374116B1 (en) * | 1999-06-14 | 2002-04-16 | Qualcomm Incorporated | Adjusting maximum transmit power to maintain constant margin for adjacent channel power rejection |
JP2001011450A (ja) * | 1999-06-28 | 2001-01-16 | Dainippon Ink & Chem Inc | 電気光学素子 |
US6363685B1 (en) * | 2000-05-19 | 2002-04-02 | William E. Kugler | Method and apparatus for selectively adjusting the elevation of an undulating or plannar surface |
JP2002252565A (ja) * | 2001-02-26 | 2002-09-06 | Sharp Corp | 送信装置 |
-
2003
- 2003-01-03 KR KR10-2003-0000208A patent/KR100518938B1/ko not_active IP Right Cessation
- 2003-01-07 JP JP2004564572A patent/JP2006512847A/ja active Pending
- 2003-01-07 EP EP03700608A patent/EP1586162A4/fr not_active Withdrawn
- 2003-01-07 CN CNB038259680A patent/CN100547910C/zh not_active Expired - Fee Related
- 2003-01-07 WO PCT/KR2003/000020 patent/WO2004062095A1/fr active Application Filing
- 2003-01-07 AU AU2003201928A patent/AU2003201928A1/en not_active Abandoned
- 2003-01-07 CA CA002514679A patent/CA2514679A1/fr not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2006512847A (ja) | 2006-04-13 |
CN100547910C (zh) | 2009-10-07 |
KR100518938B1 (ko) | 2005-10-05 |
KR20040062711A (ko) | 2004-07-09 |
AU2003201928A1 (en) | 2004-07-29 |
EP1586162A4 (fr) | 2006-09-20 |
CN1742428A (zh) | 2006-03-01 |
WO2004062095A1 (fr) | 2004-07-22 |
EP1586162A1 (fr) | 2005-10-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
FZDE | Dead |