CA2336557A1 - Modele microfabrique pour calibrations de faisceaux a multiples particules chargees et litographie de faisceaux a particules chargees protegees - Google Patents

Modele microfabrique pour calibrations de faisceaux a multiples particules chargees et litographie de faisceaux a particules chargees protegees Download PDF

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Publication number
CA2336557A1
CA2336557A1 CA002336557A CA2336557A CA2336557A1 CA 2336557 A1 CA2336557 A1 CA 2336557A1 CA 002336557 A CA002336557 A CA 002336557A CA 2336557 A CA2336557 A CA 2336557A CA 2336557 A1 CA2336557 A1 CA 2336557A1
Authority
CA
Canada
Prior art keywords
template
charged particle
target
particle beam
act
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002336557A
Other languages
English (en)
Inventor
Kim Y. Lee
Ho-Seob Kim
Marian Mankos
T. H. P. Chang
Lawrence Muray
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Etec Systems Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2336557A1 publication Critical patent/CA2336557A1/fr
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)

Abstract

L'invention concerne un procédé, une structure associée, et un appareil de calibration de faisceaux à multiples particules chargées, et de litographie à particules chargées protégées. Un modèle définissant un réseau de membranes est positionné au-dessus d'une cible (par exemple, une plaquette semiconductrice des faisceaux d'électrons). Chaque membrane définit une rainure creuse (ouverture) et un ensemble de motifs d'alignement situés par rapport aux motifs d'alignement des autres membranes. Des motifs sont inscrits sur la cible par balayage de chaque faisceau d'électrons à travers la rainure creuse associée. Des calibrations de faisceaux de particules intra-chargées et inter-chargées pour chaque faisceau de particules chargées sont effectuées à l'aide de l'ensemble de motifs d'alignement associé. Le modèle supprime également le chargement électrique indésirable de toute réserve présente sur la cible pendant le processus d'exposition.
CA002336557A 1999-05-03 2000-05-03 Modele microfabrique pour calibrations de faisceaux a multiples particules chargees et litographie de faisceaux a particules chargees protegees Abandoned CA2336557A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US30450599A 1999-05-03 1999-05-03
US09/304,505 1999-05-03
PCT/US2000/040082 WO2000067291A2 (fr) 1999-05-03 2000-05-03 Modele microfabrique pour calibrations de faisceaux a multiples particules chargees et litographie de faisceaux a particules chargees protegees

Publications (1)

Publication Number Publication Date
CA2336557A1 true CA2336557A1 (fr) 2000-11-09

Family

ID=23176813

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002336557A Abandoned CA2336557A1 (fr) 1999-05-03 2000-05-03 Modele microfabrique pour calibrations de faisceaux a multiples particules chargees et litographie de faisceaux a particules chargees protegees

Country Status (7)

Country Link
EP (1) EP1135789A2 (fr)
JP (1) JP2002543607A (fr)
KR (1) KR20010100758A (fr)
AU (1) AU4715300A (fr)
CA (1) CA2336557A1 (fr)
IL (1) IL140714A0 (fr)
WO (1) WO2000067291A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4677109B2 (ja) * 2001-03-06 2011-04-27 株式会社トプコン 基準テンプレートの製造方法及び当該方法によって製造された基準テンプレート
ATE358886T1 (de) 2001-10-05 2007-04-15 Integrated Circuit Testing Elektronenstrahlvorrrichtung mit mehrfachstrahl
US8122846B2 (en) 2005-10-26 2012-02-28 Micronic Mydata AB Platforms, apparatuses, systems and methods for processing and analyzing substrates
WO2007050023A1 (fr) * 2005-10-26 2007-05-03 Micronic Laser Systems Ab Appareils et procédés d'écriture
EP2117035B1 (fr) * 2007-03-02 2017-06-14 Advantest Corporation Dispositifs et méthodes d'exposition par faisceaux électroniques multi-colonnes
CN105143987B (zh) 2013-03-12 2017-10-20 麦克罗尼克迈达塔有限责任公司 机械制造的对准基准方法和对准系统
WO2014140047A2 (fr) 2013-03-12 2014-09-18 Micronic Mydata AB Procédé et dispositif d'écriture de masques photographiques avec réduction des erreurs mura
CN112397363B (zh) * 2020-09-28 2022-08-30 西安增材制造国家研究院有限公司 一种电子枪束斑校对装置及校对方法
DE102021120913B3 (de) * 2021-08-11 2023-02-09 Carl Zeiss Smt Gmbh Vorrichtung zum Analysieren und/oder Bearbeiten einer Probe mit einem Teilchenstrahl und Verfahren

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1100237A (fr) * 1977-03-23 1981-04-28 Roger F.W. Pease Traduction non-disponible
DE3020809A1 (de) * 1980-06-02 1981-12-10 M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München Verfahren zur herstellung eines elektronenstrahlaustrittsfensters
US4528452A (en) * 1982-12-09 1985-07-09 Electron Beam Corporation Alignment and detection system for electron image projectors
EP0289885A1 (fr) * 1987-05-08 1988-11-09 Siemens Aktiengesellschaft Système de diaphragme pour la production de plusieurs sondes de particules à section variable
US5012105A (en) * 1989-02-02 1991-04-30 Nippon Seiko Kabushiki Kaisha Multiple-imaging charged particle-beam exposure system
US4987311A (en) * 1989-08-08 1991-01-22 Etec Systems, Inc. Electron-detector diode biassing scheme for improved writing by an electron beam lithography machine
US5155412A (en) * 1991-05-28 1992-10-13 International Business Machines Corporation Method for selectively scaling a field emission electron gun and device formed thereby
US5122663A (en) * 1991-07-24 1992-06-16 International Business Machine Corporation Compact, integrated electron beam imaging system
JP3033484B2 (ja) * 1995-12-21 2000-04-17 日本電気株式会社 電子線露光装置
US5838006A (en) * 1996-10-17 1998-11-17 Etec Systems, Inc. Conical baffle for reducing charging drift in a particle beam system
US5831272A (en) * 1997-10-21 1998-11-03 Utsumi; Takao Low energy electron beam lithography
JP2000252207A (ja) * 1998-08-19 2000-09-14 Ims Ionen Mikrofab Syst Gmbh 粒子線マルチビームリソグラフイー

Also Published As

Publication number Publication date
AU4715300A (en) 2000-11-17
EP1135789A2 (fr) 2001-09-26
IL140714A0 (en) 2002-02-10
JP2002543607A (ja) 2002-12-17
WO2000067291A2 (fr) 2000-11-09
WO2000067291A3 (fr) 2001-07-05
KR20010100758A (ko) 2001-11-14

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Legal Events

Date Code Title Description
FZDE Discontinued