CA2315020A1 - Electrical circuit arrangement for transforming of magnetic field energy into electric field energy - Google Patents
Electrical circuit arrangement for transforming of magnetic field energy into electric field energy Download PDFInfo
- Publication number
- CA2315020A1 CA2315020A1 CA002315020A CA2315020A CA2315020A1 CA 2315020 A1 CA2315020 A1 CA 2315020A1 CA 002315020 A CA002315020 A CA 002315020A CA 2315020 A CA2315020 A CA 2315020A CA 2315020 A1 CA2315020 A1 CA 2315020A1
- Authority
- CA
- Canada
- Prior art keywords
- energy
- electrical
- active semiconductor
- field energy
- circuit arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Dc-Dc Converters (AREA)
- Rectifiers (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19756873.4 | 1997-12-19 | ||
DE19756873A DE19756873A1 (de) | 1997-12-19 | 1997-12-19 | Elektrische Schaltungsanordnung zur Transformation von magnetischer Feldenergie in elektrische Feldenergie |
PCT/DE1998/003603 WO1999033160A1 (de) | 1997-12-19 | 1998-12-08 | Elektrische schaltungsanordnung zur transformation von magnetischer feldenergie in elektrische feldenergie |
Publications (1)
Publication Number | Publication Date |
---|---|
CA2315020A1 true CA2315020A1 (en) | 1999-07-01 |
Family
ID=7852743
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002315020A Abandoned CA2315020A1 (en) | 1997-12-19 | 1998-12-08 | Electrical circuit arrangement for transforming of magnetic field energy into electric field energy |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1040556A1 (ja) |
JP (1) | JP2001527377A (ja) |
KR (1) | KR20010033341A (ja) |
CN (1) | CN1290422A (ja) |
CA (1) | CA2315020A1 (ja) |
DE (1) | DE19756873A1 (ja) |
TW (1) | TW416181B (ja) |
WO (1) | WO1999033160A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10011523A1 (de) * | 2000-03-09 | 2001-09-20 | Siemens Ag | Stromversorgungsschaltung mit Silizium-Karbid-Bauelementen |
JP2002218742A (ja) * | 2001-01-15 | 2002-08-02 | Nippon Inter Electronics Corp | ショットキーバリアダイオードの直列接続回路及びそれに使用するショットキーバリアダイオード。 |
SE0101848D0 (sv) * | 2001-05-25 | 2001-05-25 | Abb Research Ltd | A method concerning a junction barrier Schottky diode, such a diode and use thereof |
JP4639557B2 (ja) * | 2001-09-04 | 2011-02-23 | 三菱電機株式会社 | 直流電源装置、直流電源負荷装置 |
US7116567B2 (en) * | 2005-01-05 | 2006-10-03 | Velox Semiconductor Corporation | GaN semiconductor based voltage conversion device |
JP4980126B2 (ja) * | 2007-04-20 | 2012-07-18 | 株式会社日立製作所 | フリーホイールダイオードとを有する回路装置 |
JP2010220478A (ja) * | 2010-07-09 | 2010-09-30 | Mitsubishi Electric Corp | 直流電源装置、直流電源負荷装置 |
JP5701595B2 (ja) * | 2010-12-28 | 2015-04-15 | 三洋電機株式会社 | 系統連係装置 |
JP5170270B2 (ja) * | 2011-03-09 | 2013-03-27 | 三菱電機株式会社 | 電源装置 |
JP2011160656A (ja) * | 2011-05-24 | 2011-08-18 | Mitsubishi Electric Corp | 直流電源装置 |
JP5822773B2 (ja) * | 2012-04-17 | 2015-11-24 | 三菱電機株式会社 | 電力変換装置 |
JP5664601B2 (ja) * | 2012-07-06 | 2015-02-04 | 三菱電機株式会社 | ルームエアコン |
CN109655691B (zh) * | 2018-12-25 | 2021-01-22 | 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) | 板级电路中功率器件退化监测方法、装置和系统 |
CN114244147B (zh) * | 2021-12-17 | 2023-05-12 | 四川大学 | 一种用于电磁强化处理的电磁场耦合发生装置及方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4437146A (en) * | 1982-08-09 | 1984-03-13 | Pacific Electro Dynamics, Inc. | Boost power supply having power factor correction circuit |
US4801859A (en) * | 1986-12-23 | 1989-01-31 | Sundstrand Corporation | Boost/buck DC/DC converter |
DE3914799A1 (de) * | 1989-05-05 | 1990-11-08 | Standard Elektrik Lorenz Ag | Durchflusswandler |
US5256888A (en) * | 1992-05-04 | 1993-10-26 | Motorola, Inc. | Transistor device apparatus employing free-space electron emission from a diamond material surface |
US5334853A (en) * | 1993-09-29 | 1994-08-02 | The United States Of America As Represented By The Secretary Of The Navy | Semiconductor cold electron emission device |
US5449925A (en) * | 1994-05-04 | 1995-09-12 | North Carolina State University | Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
JPH0897441A (ja) * | 1994-09-26 | 1996-04-12 | Fuji Electric Co Ltd | 炭化けい素ショットキーダイオードの製造方法 |
US5821576A (en) * | 1995-10-18 | 1998-10-13 | Northrop Grumman Corporation | Silicon carbide power field effect transistor |
-
1997
- 1997-12-19 DE DE19756873A patent/DE19756873A1/de not_active Withdrawn
-
1998
- 1998-11-30 TW TW087119826A patent/TW416181B/zh active
- 1998-12-08 CN CN98813317A patent/CN1290422A/zh active Pending
- 1998-12-08 WO PCT/DE1998/003603 patent/WO1999033160A1/de not_active Application Discontinuation
- 1998-12-08 KR KR1020007006803A patent/KR20010033341A/ko not_active Application Discontinuation
- 1998-12-08 JP JP2000525963A patent/JP2001527377A/ja not_active Withdrawn
- 1998-12-08 CA CA002315020A patent/CA2315020A1/en not_active Abandoned
- 1998-12-08 EP EP98963391A patent/EP1040556A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR20010033341A (ko) | 2001-04-25 |
EP1040556A1 (de) | 2000-10-04 |
TW416181B (en) | 2000-12-21 |
CN1290422A (zh) | 2001-04-04 |
WO1999033160A1 (de) | 1999-07-01 |
DE19756873A1 (de) | 1999-07-01 |
JP2001527377A (ja) | 2001-12-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FZDE | Dead |