CA2315020A1 - Electrical circuit arrangement for transforming of magnetic field energy into electric field energy - Google Patents

Electrical circuit arrangement for transforming of magnetic field energy into electric field energy Download PDF

Info

Publication number
CA2315020A1
CA2315020A1 CA002315020A CA2315020A CA2315020A1 CA 2315020 A1 CA2315020 A1 CA 2315020A1 CA 002315020 A CA002315020 A CA 002315020A CA 2315020 A CA2315020 A CA 2315020A CA 2315020 A1 CA2315020 A1 CA 2315020A1
Authority
CA
Canada
Prior art keywords
energy
electrical
active semiconductor
field energy
circuit arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002315020A
Other languages
English (en)
French (fr)
Inventor
Heinz Mitlehner
Dieter Munz
Richard Schmidt
Dietrich Stephani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SiCED Electronics Development GmbH and Co KG
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2315020A1 publication Critical patent/CA2315020A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Dc-Dc Converters (AREA)
  • Rectifiers (AREA)
  • Semiconductor Memories (AREA)
CA002315020A 1997-12-19 1998-12-08 Electrical circuit arrangement for transforming of magnetic field energy into electric field energy Abandoned CA2315020A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19756873.4 1997-12-19
DE19756873A DE19756873A1 (de) 1997-12-19 1997-12-19 Elektrische Schaltungsanordnung zur Transformation von magnetischer Feldenergie in elektrische Feldenergie
PCT/DE1998/003603 WO1999033160A1 (de) 1997-12-19 1998-12-08 Elektrische schaltungsanordnung zur transformation von magnetischer feldenergie in elektrische feldenergie

Publications (1)

Publication Number Publication Date
CA2315020A1 true CA2315020A1 (en) 1999-07-01

Family

ID=7852743

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002315020A Abandoned CA2315020A1 (en) 1997-12-19 1998-12-08 Electrical circuit arrangement for transforming of magnetic field energy into electric field energy

Country Status (8)

Country Link
EP (1) EP1040556A1 (ja)
JP (1) JP2001527377A (ja)
KR (1) KR20010033341A (ja)
CN (1) CN1290422A (ja)
CA (1) CA2315020A1 (ja)
DE (1) DE19756873A1 (ja)
TW (1) TW416181B (ja)
WO (1) WO1999033160A1 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10011523A1 (de) * 2000-03-09 2001-09-20 Siemens Ag Stromversorgungsschaltung mit Silizium-Karbid-Bauelementen
JP2002218742A (ja) * 2001-01-15 2002-08-02 Nippon Inter Electronics Corp ショットキーバリアダイオードの直列接続回路及びそれに使用するショットキーバリアダイオード。
SE0101848D0 (sv) * 2001-05-25 2001-05-25 Abb Research Ltd A method concerning a junction barrier Schottky diode, such a diode and use thereof
JP4639557B2 (ja) * 2001-09-04 2011-02-23 三菱電機株式会社 直流電源装置、直流電源負荷装置
US7116567B2 (en) * 2005-01-05 2006-10-03 Velox Semiconductor Corporation GaN semiconductor based voltage conversion device
JP4980126B2 (ja) * 2007-04-20 2012-07-18 株式会社日立製作所 フリーホイールダイオードとを有する回路装置
JP2010220478A (ja) * 2010-07-09 2010-09-30 Mitsubishi Electric Corp 直流電源装置、直流電源負荷装置
JP5701595B2 (ja) * 2010-12-28 2015-04-15 三洋電機株式会社 系統連係装置
JP5170270B2 (ja) * 2011-03-09 2013-03-27 三菱電機株式会社 電源装置
JP2011160656A (ja) * 2011-05-24 2011-08-18 Mitsubishi Electric Corp 直流電源装置
JP5822773B2 (ja) * 2012-04-17 2015-11-24 三菱電機株式会社 電力変換装置
JP5664601B2 (ja) * 2012-07-06 2015-02-04 三菱電機株式会社 ルームエアコン
CN109655691B (zh) * 2018-12-25 2021-01-22 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) 板级电路中功率器件退化监测方法、装置和系统
CN114244147B (zh) * 2021-12-17 2023-05-12 四川大学 一种用于电磁强化处理的电磁场耦合发生装置及方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437146A (en) * 1982-08-09 1984-03-13 Pacific Electro Dynamics, Inc. Boost power supply having power factor correction circuit
US4801859A (en) * 1986-12-23 1989-01-31 Sundstrand Corporation Boost/buck DC/DC converter
DE3914799A1 (de) * 1989-05-05 1990-11-08 Standard Elektrik Lorenz Ag Durchflusswandler
US5256888A (en) * 1992-05-04 1993-10-26 Motorola, Inc. Transistor device apparatus employing free-space electron emission from a diamond material surface
US5334853A (en) * 1993-09-29 1994-08-02 The United States Of America As Represented By The Secretary Of The Navy Semiconductor cold electron emission device
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
JPH0897441A (ja) * 1994-09-26 1996-04-12 Fuji Electric Co Ltd 炭化けい素ショットキーダイオードの製造方法
US5821576A (en) * 1995-10-18 1998-10-13 Northrop Grumman Corporation Silicon carbide power field effect transistor

Also Published As

Publication number Publication date
KR20010033341A (ko) 2001-04-25
EP1040556A1 (de) 2000-10-04
TW416181B (en) 2000-12-21
CN1290422A (zh) 2001-04-04
WO1999033160A1 (de) 1999-07-01
DE19756873A1 (de) 1999-07-01
JP2001527377A (ja) 2001-12-25

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