416181 A7 B7 五、發明説明（） 本發明係W於一種使磁場能量轉換成電埸能量所用之 電路配置，其具有下列元件：至少一届第一齡存元件以 用於磁場能量中；一個第二儲存元件K用於電場能麗中 ;—個半導體整流元件以及一S電性開«元件。此電性 開闥元件可具有至少一種第一開Μ吠態和第二開醑狀態 。上述這些元件須互相連接，使得在開閟元件之第一開 翮吠態時磁場能量可儲存在第一儲存元件中，且在開y 元件之第二開闞狀態時磁場能量可由第一儲存元件藉由 半導體整流元件之引導而轉換至鼋場能量所用之第二儲 (請先聞讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消费合作社印製 配換 一電之元交制 樣只面態導 路轉到入擋滾之限 這中接動至 電量受輪抵整高地 。件體種換 知能會之須體很性 成元専此轉 習一面置中導種定 製流半。態 之毎方配向半 j 決 所整的耗吠 用 ：| 路方。到可I)體厚損止 所點中霣止倍受此(S導但換截 量缺向此截數會因 矽半。切由 能種方於在之間率 由在成態件 埸一 通近件鑿之效 是鼴達動元 電是導接元電態之 常電來的流 成别在小流人狀件 通止曆高整 換特件大整輪止元 件截面有體 轉件元其體之截流。元的接具導 量元流，導置和整率流高體其半 能流整動半罨態髓效整：導是在 場整體波是路吠導之體是半點是 磁體専饜面電通半置導點之缺要 。 將導半電方此導。配半缺厚之主 中種半-之一達在載路之之較有耗 件此 ，中高另高此負電统有由具損 元在中程很 ；s因式個傳具藉所換 存置IA種壓電件替整 所能層切 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 416181 B7 經濟部中央梯準局貝工消费合作社印«. 五、發明説明 ( ) 通 狀 態 (或相反方向） 時 所 產 生 » 特 別 是 由 於 少 數 載 鬅 或 多 數 載 雅 形 成 或 分 解 時 所 產 生 〇 此 種 動 m 切 換 損 耗 相 對 地 會 造 成 一 種 高 的 熱 損 耗 * 瑄 樣 可 能 會 使 半 導 體 整 流 元 件 不 穩 定 〇 此 外 可 由 半 導 體 整 流 元 件 所 帶 走 之 最 大 損 耗 功 率 由 於 其 最 大 之 酎 熱 性 而 舍 使 此 電 路 配 置 之 切 換 元 件 之 切 換 頻 率 受 到 限 制 * 因 此 其 效 率 亦 受 到 限 制 〇 特 別 是 磁 埸 能 量 用 之 第 儲 存 元 件 Μ 及 電 塌 能 量 用 之 第 二 餘 存 元 件 可 和 時 m (C 1 〇 ck)頻華成反比之方式來設定大小。 元 件 之 结 構 大 小 因 此 會 嫌 著 較 高 之 切 換 頻 率 而 變 小 〇 本 發 明 之 百 的 是 提 供 一 種 電 路 SB 置 >λ 便 使 磁 場 能 量 轉 換 成 電 場 能 量 * 其 中 可 大 大 地 減 少 上 述 之 缺 點 〇 此 g 的 是 藉 由 申 讅 專 利 範 園 第 1 , 5 . 7和9項 中 所 述 之 電 路 m 置 >x 及 Φ 請 専 利 範 匾 第 15 至 20項 中 此 種 電 路 配 置 之 應 用 來 達 成 〇 本 發 明 之 電 路 配 置 之 優 點 是 ： 半 導 體 整 m 元 件 之 半 導 體 材 料 具 有 至 少 2e V之能帶間隙κ及至少5 #1〇Λ 5V c η 之 擊 穿 電 場 強 度 〇 本 發 明 之 電 路 配 置 的 特 殊 之 其 它 寳 施 形 式 所 具有 之 優 點 是 半 導 體 整 流 元 件 之 半 導 體 材 料 含 有 碳 化 矽 • 氮 化 m 或 鑽 石 〇 本 發 明 之 電 路 配 置 之 其 它 優 點 是 ： 半 導 體 整 流 元 件 之 半 導 體 材 料 含 有 碳 化 矽 且 特 刖 是 具 有 大 約 3e V之掂帶間 隙 >x 及 大 約 25 Φ10Λ 5V/c B之擊穿電場強度。 本 發 明 之 電 路 m 置 之 其 它 優 4- 點 是 半 専 體 整 流 元 件 之 本紙張尺度適用中國國家標準（CNS > A4规格（210X297公釐） 經濟部中央揉率局貝工消费合作社印製 416181 at B7 五、發明説明（） 半導體材料含有氮化錠且特別是具有大約3.2eV之能帶 間隙及大妁30*1<T5V/cb之擊穿罨場強度。 本發明之電路E置之其它優贴是··半導體整流元件之 半導體材料含有鑽石且特別是具有大约5. 5eV之能帶間 隙Μ及大約100=fl(T5V/c·之擊穿電場強度。 由於本發明電路配置之半専體聱流元件之半導體材料 之較矽（Si)S大之能幣間隙而可有利地使半導體整流元 件具有很高之热毽定性。因此，半専雅整流元件在高的 操作溫度時亦可保持完整之功能且保持在穩定之操作狀 態中。此外，本發明之電路E置由於半導體整流元件之 半導鼉材料之擊穿電埸強度較矽堪高，因此在高的操作 電壓時亦可操作。本發明之電路配置因此亦可有利地以 較高之截止電壓來操作而作為功率電路。 由於較高之擊穿電場強度，則半導體整流元件之半導 體材料厚度特別是可Μ較小。這樣躭可有利地使半導fig 整流元件中之動態損耗和熱損耗降低，這一方面是瑄樣 舍使半導體整流元件受到較小之負載，另一方面是此電 路配置之開闉元件之切換頻率可變大。較高之切換頬率 特别是可使組件（較佳是磁場能最用之第一髄存元件Μ 及電場能量用之第二儲存元件）之大小大大地變小。因 此，一方面可使整靨電路配置之效率提高，另一方面可 使電路配置之结構大小變小。 在本發明之實施形式中，半導體整流元件是一種二極 體或特別是一種Schottky二整體時是特別有利的。由具 本紙張尺度適用中國國家棣準（CNS > A4規格（210X297公釐） ........I ^^1 - —II ί^— ^^1 - — 界 -―—--I ^^1 ^^1 (請先閱讀背面之注意事項再填寫本頁) 416181 A7 B7 五、發明説明（） 有上述特性之半導體材料所溝成之Schottky二極體具有 搔大之優點。此種Schottky二g至少在技術上之特性上 不需太大之尺寸或只箱很小之尺寸。Schottky二極體之 截止®壓高到足以使本發明之霄路配置在高的操作電壓 時亦可使用。另一方面是Schott ky二極體之半導體-金 鼷-接面儘管有較高之截止觜壓承載能力而在大小上珂 Μ較薄，則動態損耗在開闞元件之較高之切換頻率時亦 可較小，逭樣就可在高的操作霄壓及高的切換頻率時使 用Schottky二槿體之有利特性Μ作為本發明之電路配置 的半導體整流元件。 在本發明之其它實豳形式中，本發明之電路配置是用 在高設定控制器，低設定控制器，流動轉換器或功率因 敝控制電路中。 本發明有利之其它實施形式敘述申請專利範圔各項臞 項中。 本發明將依據顧示在以下圓式中之霣腌例作詳畑描述 。匾式簡單說明如下： 經濟部中央榣準局男工消费合作社印製 .^^1· ^^^1 ^^^1 ^1— ci^i ^^^1 I ^^^1 ^^^1 n ^^^1 ^1^1- ^ J. "-5 (請先閲讀背面之注意事項再填寫本頁) 第1圈本發明之電路配置，其係用來使磁場能量轉換 成罨埸能量。 第2圈半導體整滾元件之具有至少2eV掂帶間隙之半 導髓材料，其例如具有一種至金國Schottky接觸區之接 面。 第3匾半導體整流元件之具有至少5*10 A5V/c*擊穿電 場強度之半導體材料。 -6- 本紙張尺度適用中國國家揉率（CNS ) A4C格（210X297公釐） 4Ui8l B7 經濟部中央揉率局員工消费合作社印製 五、發明説明 ( ) 1 1 流 電 壓 1 但 亦 可 為 直 流 罨 壓 〇 藉 由 開 闉 元 件 S 轉 換 成 第 1 1 二 切 換 狀 態 S2而 使 電 流 11 中 斷 〇 瑄 漾 可 產 生 — 種 至 少 由 1 1 第 ~~. 儲 存 元 件 L 所 供 應 之 經 由 半 導 膜 整 流 元 件 D 而 在 其 S. 請 ! 先 1 導 通 方 向 中 流 «1 之 η 流 12 〇 罨 流 12流 至 第 二 儲 存 元 件 C 閱 1 I 中 且 在 其 中 產 生 電 場 能 量 Ε ，其特別是κ電壓uc之形式 背 ir 1 I 之 1 表 示 之 能 量 〇 注 意 I I 躭 像 第 1 圖 中 所 示 之 例 子 — 樣 r 在 本 發 明 之 W 施 形 式 事 項 再 1 1 中 第 一 儲 存 元 件 L 最 好 是 一 種 電 感 元 件 » 例 如 * 線 圈 〇 窝· 本 在 本 發 明 之 其 它 實 m 形 式 中 « 第 二 儲 存 元 件 C 最 好 是 — 頁 1 I 種 電 容 元 件 * 例 如 * 電 容 器 〇 在 本 發 明 之 其 它 實 施 形 式 1 1 中 t 電 性 開 關 元 件 S 最 好 是 一 種 半 導 體 開 元 件 t 例 如 1 1 9 場 效 電 晶 體 〇 在 本 發 明 之 其 它 實 腌 形 式 中 1 至 少 另 一 1 訂 特 別 是 同 形 式 之 半 専 體 整 流 元 件 D ' 是 與 半 m ϋ 整 流 元 件 1 D 並 瞄 〇 此 種 並 聯 電 路 有 利 的 是 不 需 其 它 額 外 之 設 施 » 1 I 道 是 因 為 以 下 再 描 述 之 半 導 體 整 流 元 件 D 或 D ' 具 有 正 的 1 1 潘 度 係 數 〇 半 導 體 整 潦 元 件 特 別 是 以 二 極 體 之 形 式 存 在 1 1 « 最 好 是 一 種 Sc h 〇 11 k y 二 極 臞 〇 本 發 明 以 下 將 依 據 此 處 I 所 舉 例 之 姐 件 作 進 一 步 描 述 〇 1 1 1 例 如 在 第 2 和 第 3 圖 中 所 示 » 本 發 明 半 導 體 整 流 元 件 1 1 D之半導體材料具有至少2 eV (電子伏特） 之 能 帶 間 隙 Μ 及 I 至 少 5 * 10 A5V/ c a(伏特/公 分 )之擊穿電埸強度EIC< 符號H 1 10 Λ5 "是表示” 1E + 5 -( 3 1 1 在 第 2 IBI 圔 中 例 如 Μ 符 航 表 示 本 發 明 半 導 體 整 流 元 件 D 1 1 之 半 専 體 材 枓 之 能 帶 間 隙 VB 9 8 其 至 少 是 2e V >能帶間隙 1 1 1 1 1 1 本紙張尺度逋用中國國家標準< CNS ) A4規格（210X297公釐） A7 B7 經濟部中央標率局負工消费合作杜印製 ^16181 五、發明説明（） VB是價帶EV之能量位準和導帶SC之能量位準此二能量位 準之間的能量差。此外，費米（Fer·丨）能階是Μ輔助性 之方式表示出來。第2圔之曲線圃在縱座檷方向中是與 一種至金ISSchottky接》匾之半導體接面有闞。在第3 圈中例如Μ符號表示本發明半導《整流元件D之半導體 材料之擊穿電場強度Ε Κ ,其至少是5 ΐ 1 0 Λ 5 V / c Β。在第3 匾之構座標中顯示此半専體整流元件D之半導體材料之 摻雜度（Ml/ci«"3表示）。此種接雜度之表示值例如只表 示所選取之'值。 在本發明之電路配置G之各種不同之實施形式中，半 導體整流元件D之半導腰材料特別是含有碳化矽SiC,氮化 錠GaN或鑽石Cdia,即，具有鑽石-晶體格结構之碳，其 中此半導體材料具有至少2eV之能帶間隙VBM及至少5# l(T5V/c·之擊穿電埸強度EK。 在本發明之其它變型中，半専髏整流元件D之半導體 材料特別是含有碳化矽SiC,氮化錠GaN或鑽石Cd〖a。 若本發明之電路配置G之實豳形式或本發明之變型中之 半導體整流元件D之半導體材料含有碳化矽SiC,則此種半 導體材料特別是具有一大約3eV之能帶間隙VB Μ及大約25* lOIV/ca之擊穿電場強度，如第2和第3圖中所示。 若本發明之電路配置G之實胞形式或本發明之變型中之 半導體整流元件D之半導體材料含有氮化錠GaN,則此種半 導體材料特別是具有大約3.2eV之能帶間隙VBK及大約30* l(T5V/c·之擊穿罨場強度EK,如第2和第3匾所示。 -9- 本紙張尺度適用中國圉家揉準（CNS ) A4規格（210X297公釐） (讀先閲讀背面之注意事項再填寫本頁)416181 A7 B7 V. Description of the Invention The present invention relates to a circuit configuration for converting magnetic field energy into electric energy. It has the following elements: at least one first-year storage element for magnetic field energy; a first Two storage elements K are used in the electric field; a semiconductor rectifier element and an S electrical switch element. The electrical opening element may have at least one first opening state and a second opening state. The above-mentioned elements must be connected to each other, so that the magnetic field energy can be stored in the first storage element during the first opening and closing bark state of the switching element, and the magnetic field energy can be obtained from the first storing element during the second opening state of the switching element. Guided by the semiconductor rectifier element to convert to the second storage for market energy (please read the precautions on the back before filling out this page) Printed by the Central Standards Bureau of the Ministry of Economic Affairs In the sample preparation, only the surface guide is turned to the limit of the roll-in limit, and then the power is transferred to the high ground by the power. The change of the body type of the knowledge and knowledge of the nature of the beard is very important. Cheng Yuan is now transferred to the center of the guide and the design of the current half. The square side of the state is aligned to the half j to determine the total consumption: | Road side. To the point where I can stop the body thickness damage, this time (S, but the cut-off direction will be due to the silicon half. It can be cut by the energy planter and the rate by the state of the state. The effect of the near-piece chisel is that the Tada moving element is a constant current that is connected to the electric state of the element. The flow is different from the small flow of humanoid parts. The interception of its body. The connection of the element, the elementary current, the conductance and the rate of flow, the body's half-energy flow, the half-state state, and the half-state state. The main point of the semi-conducting point of the electric conduction of the magnet surface is to guide the semi-electric side. The semi-thickness of the main medium and half-one of the more consumable parts in the load path, the high and the negative high The unit has a lossy element in the middle range; the s factor type transfer device is used to exchange and store IA piezoelectric components to replace the entire layer. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). 416181 B7 Printed by the Central Laboratories of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives «. V. Description of the invention () produced when the state (or the opposite direction)» especially due to less This is caused by the formation or decomposition of several loads or most loads. This kind of dynamic m switching loss will cause a relatively high thermal loss. * It may make the semiconductor rectifier element unstable. In addition, it can be taken away by the semiconductor rectifier element. The maximum power loss limits the switching frequency of the switching elements of this circuit configuration due to its maximum thermal properties *. Therefore, its efficiency is also limited. Especially the second storage element M for magnetic energy and the second storage element for electrical collapse energy. The size of the remaining components can be set in inverse proportion to the time m (C 1 ck) frequency. Therefore, the structure size of the components will become smaller due to the higher switching frequency. One hundred of the present invention is to provide a circuit SB Set > λ to convert the magnetic field energy into the electric field energy * which can greatly reduce the above-mentioned disadvantages. This g is obtained through the application of Shenyang Patent Fanyuan No. 1, 5 The circuit configuration described in items 7 and 9 > x and Φ Please use the circuit configuration described in items 15 to 20 to achieve this. The advantages of the circuit configuration of the present invention are: The semiconductor material has a band gap κ of at least 2e V and a breakdown electric field strength of at least 5 # 1〇Λ 5V c η. The special other Bao Shi form of the circuit configuration of the present invention has the advantage that the semiconductor material of the semiconductor rectifier element Contains silicon carbide • Nitride m or diamond. Other advantages of the circuit arrangement of the present invention are: The semiconductor material of the semiconductor rectifier element contains silicon carbide and has a band gap > x of approximately 3e V and approximately 25 Φ10Λ 5V / c The breakdown electric field strength of B. Other advantages 4-points of the circuit m of the present invention are that the paper size of the semi-carcass rectifier is applicable to the Chinese national standard (CNS > A4 specification (210X297 mm)), printed by the shelling consumer cooperative of the Central Rubbing Bureau of the Ministry of Economic Affairs 416181 at B7 V. Description of the invention () The semiconductor material contains a nitride ingot and especially has a band gap of about 3.2 eV and a breakdown field strength of 30 妁 1 < T5V / cb. The circuit E of the present invention is provided with other Youtie is ... The semiconductor material of the semiconductor rectifier element contains diamond and especially has a band gap M of about 5.5 eV and a breakdown electric field strength of about 100 = fl (T5V / c ·. Because of the half of the circuit configuration of the present invention, The semiconductor material of the bulk flow element has a larger energy gap than that of silicon (Si) S, which can advantageously make the semiconductor rectifier element have a high thermal stability. Therefore, the semi-rigid rectifier element can also be used at high operating temperatures. It maintains a complete function and keeps it in a stable operating state. In addition, the circuit E of the present invention has a higher breakdown strength than the silicon due to the breakdown voltage of the semiconductor material of the semiconductor rectifier element. It can also be operated under voltage. The circuit configuration of the present invention can therefore also be advantageously operated as a power circuit with a higher cut-off voltage. Due to the higher breakdown electric field strength, the thickness of the semiconductor material of the semiconductor rectifier element can be particularly M is small. In this way, it can advantageously reduce the dynamic loss and thermal loss in the semiconducting fig rectifier element. This is because the semiconductor rectifier element is subjected to a smaller load on the one hand, and the circuit configuration is opened on the other.闉 The switching frequency of the element can be increased. A higher switching rate can make the size of the module (preferably the first storage element M with the most magnetic field energy and the second storage element with the electric field energy) greatly change. Therefore, on the one hand, the efficiency of the circuit configuration can be improved, and on the other hand, the structure size of the circuit configuration can be reduced. In the embodiment of the present invention, the semiconductor rectifier element is a diode or a Schottky in particular. It is particularly advantageous when it is in its entirety. The Chinese paper standard (CNS > A4 (210X297 mm)) applies to this paper size ........ I ^^ 1-—II ί ^ — ^ ^ 1-— Bound ------ I ^^ 1 ^^ 1 (Please read the notes on the back before filling in this page) 416181 A7 B7 V. Description of the invention () Schottky formed by semiconductor materials with the above characteristics Diodes have the advantage of being extremely large. This Schottky diode does not need to be too large or small in size, at least technically. The Schottky Diode Cutoff® pressure is high enough to make the invention The Xiao Road configuration can also be used at high operating voltages. On the other hand, the semiconductor-gold junction of the Schott ky diode has a relatively small cut-off voltage in spite of its higher cut-off voltage carrying capacity. The dynamic loss can also be smaller at the higher switching frequency of the switching element, so that the favorable characteristics of the Schottky dimorph can be used as the circuit configuration of the present invention at high operating pressure and high switching frequency. Semiconductor rectifier element. In other implementations of the invention, the circuit configuration of the invention is used in a high setting controller, a low setting controller, a flow converter or a power factor control circuit. Other advantageous embodiments of the present invention are described in the various items of the patent application. The present invention will be described in detail based on the pickled examples shown in the following round form by Gu. A simple description of the plaque is as follows: Printed by the Men's Workers Consumer Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs. ^^ 1 · ^^^ 1 ^^^ 1 ^ 1— ci ^ i ^^^ 1 I ^^^ 1 ^^^ 1 n ^^^ 1 ^ 1 ^ 1- ^ J. " -5 (Please read the notes on the back before filling out this page) The first circle of the circuit configuration of the present invention is used to convert the magnetic field energy into 罨 埸energy. The semi-conductive semiconductor material of the second round semiconductor rolling element with at least 2 eV band gap has, for example, a junction to the Schottky contact area of Golden State. The third plaque semiconductor rectifying element is a semiconductor material having a breakdown field strength of at least 5 * 10 A5V / c *. -6- This paper size is applicable to China National Kneading Rate (CNS) A4C (210X297 mm) 4Ui8l B7 Printed by the Consumer Cooperative of the Central Kneading Bureau of the Ministry of Economic Affairs 5. Description of the invention () 1 1 Current voltage 1 but DC罨 压 〇 By switching the switching element S to the 1 1 2 switching state S2 and interrupting the current 11 〇 Yang can produce-at least 1 1 ~ ~. Storage element L supplied through the semiconductive membrane rectifier element D and in its S. Please! First 1 conduction direction current «1 of η current 12 〇 罨 current 12 flows to the second storage element C 1 1 I and generates electric field energy E in it, especially in the form of κ voltage uc The energy represented by ir 1 I 1 〇 Note II 躭 Like the example shown in Figure 1-like r In the W embodiment of the present invention, the first storage element L is preferably an inductive element »For example * Coil 0 Nest · Ben In other embodiments of the present invention, «the second storage element C is preferably — page 1 I capacitive elements * such as * capacitors 〇 In other embodiments of the present invention 1 1 t electrical switching element S is preferably a Semiconductor open element t such as 1 1 9 field-effect transistor. In other solidified forms of the present invention 1 at least another 1 order, in particular the half-body rectifier element D ′ of the same form, and the half-m rectifier element 1 D and It is advantageous that such a parallel circuit does not require any additional facilities. The 1 I channel is because the semiconductor rectifier element D or D 'described below has a positive 1 1 pan coefficient. The semiconductor trimming element is especially two The polar form exists 1 1 «preferably a Sc h 〇11 ky two poles 臞 〇 The present invention will be further described below based on the sisters exemplified here I 1 1 1 For example in Shown in Figures 2 and 3 »The semiconductor material of the semiconductor rectifier element 1 1 D of the present invention has a band gap M of at least 2 eV (electron volts) and I at least 5 * 10 A5V / ca (volts / cm). Breakthrough strength EIC < symbol H 1 10 Λ5 " means "1E + 5-(3 1 1 In the second IBI, for example, M Fu Hang represents half of the body material of the semiconductor rectifier element D 1 1 of the present invention. Band gap VB 9 8 It is at least 2e V > Band gap 1 1 1 1 1 1 This paper adopts Chinese National Standards < CNS) A4 size (210X297 mm) A7 B7 Printed by Industrial and Consumer Cooperation Du 16181 V. Description of the Invention () VB is the energy difference between the energy level of the valence band EV and the energy level of the conduction band SC. In addition, the Fermi level is expressed in an M-assisted manner. The curve garden of the second frame is in the direction of the vertical frame, and is connected to a semiconductor interface of a golden ISSchottky plaque. In the third circle, for example, the symbol M represents the breakdown electric field strength E K of the semiconductor material of the rectifier element D of the present invention, which is at least 5 ΐ 1 0 Λ 5 V / c Β. In the structure coordinates of the third plaque, the doping degree of the semiconductor material of the semi-corporeal rectifying element D is shown (Ml / ci «" 3). The indication value of such a degree of coupling only indicates the selected 'value', for example. In various different implementation forms of the circuit configuration G of the present invention, the semiconducting waist material of the semiconductor rectifier element D particularly contains silicon carbide SiC, nitride ingot GaN or diamond Cdia, that is, carbon with a diamond-crystal lattice structure, The semiconductor material has a band gap VBM of at least 2 eV and a breakdown electric strength EK of at least 5 (T5V / c ·). In other variations of the present invention, the semiconductor material of the semi-calvary rectifier element D contains in particular Silicon carbide SiC, indium nitride GaN, or diamond Cd [a. If the semiconductor material of the actual configuration of the circuit configuration G of the present invention or the semiconductor rectifier element D in the modification of the present invention contains silicon carbide SiC, such a semiconductor material is particularly It has a band gap VB M of about 3eV and a breakdown electric field strength of about 25 * 10V / ca, as shown in Figures 2 and 3. If the circuit configuration of the present invention is in the form of a cell or the present invention The semiconductor material of the semiconductor rectifier element D in the modification contains indium nitride GaN, and this semiconductor material especially has a band gap VBK of about 3.2eV and a breakdown field strength EK of about 30 * l (T5V / c ·, As shown in the second and third plaques. Zhang scale is applicable to Chinese family standard (CNS) A4 (210X297 mm) (Read the precautions on the back before filling this page)
416181 A7 _B7_ 五、發明説明（） 若本發明之電路S置G之實施形式或本發明之受型中 之半導體整流元件D之半導體材科含有餚石Cdia，則此 穰半導體材料特別是具有大約5.5eV之能帶間隙VBM及 大約100=tl(T5V/c·之擊穿電場強度EK,亦如同第2及第3 圖中所示。 在第4至第厂圈中例如顯示一些有利之電路配置，本 發明可用於這些電路中。 第4圓顯示~種髙設定控制器電路H,其具有本發明之 電路配置G,特別是输人電壓UE1是施加至此電路配置且此 電路E置具有一输出電鱷ϋ/Π。此種高設定控制器電路Η 例如具有一個猓圈L11,—個場效電晶體S11, —個半専 經濟部中央樣準局貝工消費合作社印裝 ^^1' Id 1--- f HI I In ^^^1 ^^^1-_、 (請先閱讀背面之注意事項再填寫本頁) 艚二極體Dll(特刖是Schottky二極體）以及一個電容器 CU。媒圈L11是與輸人電壓ϋΕΙ串聯相接。在嬢圈L11之 後Κ平行於輪人電B U Ε 1之方式配置上述之壜效電晶髓 S11和電容器C11。在場效電晶體S11和電容器C11之間且 Μ和媒圈L11串聪之方式在導通方式中配置半導體二極 勝D11。此半導體二極體D11具有本發明所述之半導鱧材 料。在埸效電晶體S11接通和斷開時磁場能量由線圈L11 轉換至電容器CU而成為電場能量。 第5圃顯示一種低設定控制器電路Τ,其具有本發明之 電路配置G,有一輪入電壓UE2特別是傳送至此電路配置G ，此電路配置G具有一個輪出霣整042。此種低設定控制 器電路Τ例如具有一個線圈L21, —個埸效電晶《IS21, 一個半導髏二極體D21(特別是Schottky二極體）Μ及一 -10- 本紙張X度適用中國國家橾準（CNS ) Α4規格（210Χ297公釐） ^26181 Α7 Β7 五、發明説明（） 個轚容器C21。場效甯晶體S21是與輪入轚壓UE2__。 在場效窜晶體S21之後Μ平行於_人霄壓UE2之方式在截 出方向中配置半導體二槿體D21和罨容器C21。在半導體 二搔體021和電容器C21之間且以和場效電晶體S21串瞄 之方式配置一傾埭圈L21。半専體二極體D21具有本發明 所述之半導體材料。在場效電晶體S21接通和斷開時磁 播能最由媒圈L21轉換至電容器C21而成為霣場能最。 第6圈是一種流動轉換器踅路[)«,其具有本發明之霣 路Β置G,有一檐人®壓UE3特別是傅送至此霣路Κ置G, 此電路配置G具有一 «输出電壓DA3。此種流_轉換器電 路DW之主霣路DW1及/或二次電路DV2具有本發明之«路 配置G。主電路D\n和二次電路DW2最好是藉由變壓器T3 而互相耦合。主轚路[)«1例如具有第一霣容器C31,第一 媒SL31,第一半専體二極體D31(特別是Schottky二極 以及第一場效電晶«S31。第一線圈L31通常是變壓器T3 之主矂圈之部份線腯（特別是一種所諝去磁線匾）。二次 電路DW2例如具有第二半専暖二棰體D32(特別是Schlttky 二棰體），第三半導體二槿《D33,第二媒圚L32K及第 二霉容器C32。在場效轚晶體S31接通和斷閭時，磁場能 S由第一線圈L31轉換至第一電容器C31而成為電場能量。 在主電路DW1中平行於輪入電壓ϋΕ3而配置一霄容器C 31，—埋接成截止方向之第一線圈L31(其是與第一半専 *8二極體D31串聯）Μ及一與變壓器T3之主側串聯之第一 塌效爾晶體S31。在場效電晶BS31接通和斷開時，磁場 -11- 本紙張尺度遙用中國國家標準（CNS ) Α4規格（210X297公釐） ----------取-- (請先閲讀背面之注意事項再填寫本頁) -訂 經濟部令央槺隼局兵工消费合作杜印氧 經濟部中央標率局貝工消費合作社印製 4161S1 A7 B7五、發明説明（） » 能最由第一猱圈L31轉換至第一電容器C31而成為«場能 量〇 在二次電路D W 2中，第三半導體二極體D 3 3在専通方向 中是與變S器T3之二次側串聯。在第三半専體二極體D33 之後平行於變K器T3之二次糊而在截止方向中配置第二 半導體二極體D32和第二電容器C32。在第二半導體二極 體D32和第二電容器C32之間且Μ和第三半導體二極體D 33串瞄之方式R置第二線圈L32。在埸效窜晶體S31接通 和斷開時，磁埸能量由第二線圈L32轉換至第二霣容器 C32而成為電埸能量。 第一（D31)及/或第二（D32)半導體二極體最好是二者都 具有本發明之半導體材料。第三半導®二極體D33同樣亦 可具有本發明之半導體材料。 第7圈是功率因數-電路PFC,其具有本發明之電路配置 G,特刖是有一輪入電壓UE 4傳送至此電路配置G,此霄路 配置具有一個输出電壓ϋΑ4。功率因数-電路PFC特別是又 稱為功率因數控制電路。因此，功率因數-¾路PFC之外 部串瞄電路PA及/或内部串瞄電路PI具有本發明之電路配 置G。外部串脚電路PA例如具有第一線圈L41,第一場效霣 晶體S41M及第一半導體二極體D41(特別是Schottky二 極體）。内部串聯電路PI例如具有第二換圏L42,第二半 導體二極體D42(特刖是Schottky二極體），第三半導體 二極體<143。外部（PA)和內部（PI)串聯電路具有一個共 同之電容器C41。在第一（S41)和第二（S42)埸效電晶體 -12- ^^^1 II - - 1-1 ^^^1 .^^1' I I «n^ ^^^1 ^^^1 ^—»1 ^^^1 ^^^1--aJ (請先閲讀背面之注意事項再填寫本頁) 本纸張尺度通用中國國家橾準（CNS ) A4規格（210X297公釐） 經濟部中央樣準局貝工消费合作社印装 4-6181 Α7 _Β7_五、發明説明（） 接通和斷開時，磁場能ft由第一媒圈L41及由第二線圏 L42轉換至霣容器C41而成為窜場能量。 在外部串梅電路PA中，第一線圈L41是與_人轚壓UE4 串聪。在第一镍圈L41之後以平行於輪入電壓ϋΕ4之方式 而配置第一場效電晶體S41和電容器C41。在第一場效電 晶體S41和電容器C41之藺且Κ第一線BIL41串聯之方式 於導通方向中配置第一半導體二極BD41。在第一場效 電晶體D41接通和斷閭時，磁埸能量由第一線圈L41轉換 至電容器C 41而成為電埸能量。 在內部串聯電路ΡΙ中，在第一線圈L41,第一場效電晶 體L41和第一半導體二極體Κ41之間的共同節點上連接第 二媒圈L 42。在第二線圈L 42之後Μ平行於第一場效電晶 體S41之方式配置一個與第三半導體二極體D43(其是連 捿成導通方向）串限之第二場效電晶體S42且配置一個電 容器C41。在第二場效電晶體S42和電容器C41之間且K 第二埭圈42串聯之方式在導通方向中配置一届第二半導 髓二極體D42。 第一（D41)及/或第二（D42)半導體二極體最好是二者都 具有本發明之半導體材料。第三半導體二極«ID43同樣可 具有本發明之半導體材料。 ----------私-------訂 (請先閱讀背面之注意事項再填寫本頁) -13- 本紙張尺度適用中困圃家標隼（CNS ) A4規格（21〇Χ297公釐} 經濟部中央標準局員工消費合作社印製 416181 A7 B7 五、發明説明（） 參考符號說明 G ....電路配置 L____電感元件，特別是媒圈 Μ____磁場能量，其餘存在電感元件L中 IL...流經電感元之電流 11.. .在半導髁開闢元件S之第一切換狀態時（其 使磁場能量Η形成在電感元件L中）之電流 12.. .在半導體開關元件S之第二切換狀態時（其 將儲存在電感元件L中之磁場能董Μ轉換成 電容元件C中之電場能量Ε)之電滾 C----電容元件中，特別是電容器 Β----電瑾能最，其儲存在霄容元件C中 UC...跨於電容元件C上之電壓，其係由馘存在C 中之電場能量Ε所產生 S____半導體開關元件，特別是電晶體或埸效電 晶體 51.. .半導賭開關元件之第一切換狀態，其使磁 場能量形成在電感元件L中 52.. .半導體開Μ元件之第二切換吠態，其使電 感元件L中之磁場能量Μ經由半専體整流元 件D而轉換成電容元件C中之電場能悬Ε D____半導體整流元件，特別是Schottky二極體 ，其最好含有碳化矽416181 A7 _B7_ V. Description of the invention () If the semiconductor material of the semiconductor rectifier element D in the embodiment of the circuit S of the present invention or the receiver of the present invention contains the stone Cdia, the semiconductor material in particular has approximately The band gap VBM of 5.5eV and the breakdown electric field strength EK of about 100 = t1 (T5V / c ·) are also shown in the second and third figures. For example, some advantageous circuits are shown in the fourth to fourth factory circles. The present invention can be used in these circuits. The fourth circle shows a kind of setting controller circuit H, which has the circuit configuration G of the present invention, especially the input voltage UE1 is applied to this circuit configuration and this circuit E is provided with a Output electric crocodile ϋ / Π. Such a high setting controller circuit Η for example has a 猓 turn L11, a field effect transistor S11, a half 印 printed by the Central Bureau of Standards of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives ^^ 1 ' Id 1 --- f HI I In ^^^ 1 ^^^ 1-_, (Please read the notes on the back before filling in this page) 艚 Diode Dll (Specially Schottky diode) and a capacitor CU. The medium circle L11 is connected in series with the input voltage ϋΕΙ. After the circle L11, K is parallel to the wheel electric power. BU E 1 configures the above-mentioned effect transistor S11 and capacitor C11. Between the field effect transistor S11 and capacitor C11, and M and the dielectric ring L11 are connected in series, a semiconductor diode D11 is configured in the conduction mode. This semiconductor diode D11 has the semiconductor material described in the present invention. When the effect transistor S11 is turned on and off, the magnetic field energy is converted from the coil L11 to the capacitor CU to become the electric field energy. The fifth field shows a low setting The controller circuit T has the circuit configuration G of the present invention, and has a round-in voltage UE2, in particular, is transmitted to this circuit configuration G. This circuit configuration G has a round-out adjustment 042. Such a low-setting controller circuit T, for example, has a Coil L21, an ineffective transistor "IS21, a semiconducting diode D21 (especially Schottky diode) M and a -10- X degree of this paper is applicable to China National Standard (CNS) A4 specification (210 × 297 (Mm) ^ 26181 Α7 Β7 V. Description of the invention () A container C21. The field effect crystal S21 is pressed with the wheel into UE2__. After the field effect channeling crystal S21, M is parallel to the human pressure UE2. Configure semiconductor hibiscus D2 in the outbound direction 1 and tritium container C21. A tilting circle L21 is arranged between the semiconductor dimorph 021 and the capacitor C21 in a way that is aligned with the field effect transistor S21. The semi-diode D21 has the semiconductor according to the present invention. Material. When field-effect transistor S21 is turned on and off, the magnetic field energy is most converted from the dielectric circle L21 to the capacitor C21 and becomes the most field energy. The sixth circle is a flow converter circuit [) «, which has this The circuit B of the invention is set to G, and there is an eaves ® to press UE3, especially the circuit K is set to G. This circuit configuration G has an «output voltage DA3. The main circuit DW1 and / or the secondary circuit DV2 of such a stream_converter circuit DW has the circuit configuration G of the present invention. The main circuit D \ n and the secondary circuit DW2 are preferably coupled to each other by a transformer T3. The main circuit [] «1 has for example the first container C31, the first medium SL31, the first half-body diode D31 (especially the Schottky diode and the first field-effect transistor« S31. The first coil L31 is usually It is a part of the main coil of the transformer T3 (especially a kind of demagnetized wire plaque). The secondary circuit DW2 has, for example, a second half-warm di-body D32 (especially Schlttky di-body), the third The semiconductor hibiscus D33, the second medium L32K and the second mold container C32. When the field effect crystal S31 is turned on and off, the magnetic field energy S is converted from the first coil L31 to the first capacitor C31 and becomes electric field energy. In the main circuit DW1, a container C 31 is arranged in parallel to the wheel-in voltage 33, a first coil L31 (which is connected in series with the first half 8 * 8 diode D31) M and a terminal embedded in the cut-off direction. The first collapsed crystal S31 in series on the main side of transformer T3. When the field effect transistor BS31 is turned on and off, the magnetic field is -11- This paper uses the Chinese National Standard (CNS) A4 specification (210X297 mm). ---------- Take-- (Please read the precautions on the back before filling out this page) Printed by 4161S1 A7 B7 printed by the Shell Standard Consumer Cooperative of the Central Standards Bureau of the Ministry of Economics of India. 5. Description of the invention () »Can be converted from the first loop L31 to the first capacitor C31 to become« field energy 〇 in the secondary circuit DW In 2, the third semiconductor diode D 3 3 is connected in series with the secondary side of the transformer S3 in the through direction. After the third semiconductor diode D33 is parallel to the secondary paste of the transformer K3 In the cut-off direction, the second semiconductor diode D32 and the second capacitor C32 are arranged. Between the second semiconductor diode D32 and the second capacitor C32 and between M and the third semiconductor diode D 33, the method R is performed in series. The second coil L32 is set. When the effective channeling crystal S31 is turned on and off, the magnetic energy is converted from the second coil L32 to the second container C32 and becomes electric energy. The first (D31) and / or the second (D32) The semiconductor diode preferably has both the semiconductor material of the present invention. The third semiconductor® diode D33 can also have the semiconductor material of the present invention. The seventh circle is the power factor-circuit PFC, which With the circuit configuration G of the present invention, there is a round of incoming voltage UE 4 transmitted to this circuit configuration G, This short circuit configuration has an output voltage ϋΑ4. The power factor-circuit PFC is particularly also called a power factor control circuit. Therefore, the power factor-three-way PFC external cross-seeing circuit PA and / or the internal cross-seeing circuit PI have the present invention. The circuit configuration G. The external series pin circuit PA has, for example, a first coil L41, a first field-effect transistor S41M, and a first semiconductor diode D41 (especially a Schottky diode). The internal series circuit PI, for example, has a second switching circuit. L42, second semiconductor diode D42 (especially Schottky diode), third semiconductor diode < 143. The external (PA) and internal (PI) series circuits have a common capacitor C41. In the first (S41) and second (S42) effect transistors -12- ^^^ 1 II--1-1 ^^^ 1. ^^ 1 'II «n ^ ^^^ 1 ^^^ 1 ^ — »1 ^^^ 1 ^^^ 1--aJ (Please read the notes on the back before filling in this page) This paper size is in accordance with China National Standard (CNS) A4 (210X297 mm) Central Ministry of Economic Affairs Printed by the Bureau of Specimen Shellfish Consumer Cooperatives 4-6181 Α7 _Β7_ V. Description of the invention () When switched on and off, the magnetic field energy ft is converted from the first medium circle L41 and from the second line 圏 L42 to 霣 container C41, Become field energy. In the external string circuit PA, the first coil L41 is connected to the UE4 string Cong. After the first nickel ring L41, a first field effect transistor S41 and a capacitor C41 are arranged in a manner parallel to the run-in voltage Ε4. The first semiconductor diode BD41 is arranged in the conduction direction in a manner that the first field-effect transistor S41 and the capacitor C41 are connected in series with the first line BIL41. When the first field effect transistor D41 is turned on and off, the magnetic energy is converted from the first coil L41 to the capacitor C 41 to become the electrical energy. In the internal series circuit PI, a second intermediate coil L42 is connected to a common node between the first coil L41, the first field effect transistor L41, and the first semiconductor diode K41. A second field-effect transistor S42, which is serially confined with the third semiconductor diode D43 (which is connected in a conducting direction), is arranged and arranged after the second coil L 42 is parallel to the first field-effect transistor S41. One capacitor C41. A second semiconductor diode D42 is arranged in the conduction direction between the second field effect transistor S42 and the capacitor C41 and the K second loop 42 is connected in series. The first (D41) and / or the second (D42) semiconductor diode preferably both have the semiconductor material of the present invention. The third semiconductor diode «ID43 may also have the semiconductor material of the present invention. ---------- Private ------- Order (please read the precautions on the back before filling this page) -13- This paper size is suitable for the standard of the family house (CNS) A4 (21〇 × 297 mm) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 416181 A7 B7 V. Description of the invention () Reference symbol description G .... Circuit configuration L____inductive element, especially medium circle M____ magnetic field energy, The rest of the current in the inductive element L, IL ... flowing through the inductive element 11.... In the first switching state of the semiconductor element S (which causes the magnetic field energy to form in the inductive element L) 12. . In the second switching state of the semiconductor switching element S (which converts the magnetic field energy M stored in the inductance element L into the electric field energy E in the capacitance element C) in the electric roller C ---- the capacitance element, In particular, capacitor B is the most energy-efficient capacitor. It is stored in the capacitor C. The voltage across the capacitor C is generated by the electric field energy E stored in C. S__Semiconductor Switching element, especially transistor or effect transistor 51.... The first switching state of a semiconducting switching element, which shapes the magnetic field energy The second switching bark state of the semiconductor switch M element formed in the inductance element L converts the magnetic field energy M in the inductance element L to the electric field energy suspension in the capacitance element C through the half-body rectification element D. D____ Semiconductor rectifiers, especially Schottky diodes, which preferably contain silicon carbide
VB...半導體整流元件之能帶間隙.其至少是2eV -14- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） I 裝 I X 線 (請先閲讀背面之注意事項再填寫本頁) 416181 A7 B7 五、發明説明（) ΕΚ...半導體整流元件之擊穿電場強度 W____磁場能量Μ轉換成至少4*1E5V/cb之電埸能VB ... Band gap of semiconductor rectifier element. It is at least 2eV -14- This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) I Install IX cable (Please read the precautions on the back before filling (This page) 416181 A7 B7 V. Description of the invention () EK ... The breakdown electric field strength of the semiconductor rectifier element W____ The magnetic field energy M is converted into an electric energy of at least 4 * 1E5V / cb
量E Η____高設定控制器電路 Τ----低設定控制器電路 DW...流動轉換器電路 PFC.+功率因數控制電路 n- ^^^1 In ^^^1 ^^1— ^^^1 ^^^1 ^-I ^^^1 一flJ (請先閲讀背面之注意事項再填寫本頁) 經濟部中央揉隼局貝工消費合作杜印東 _15~ 本紙張尺度適用中國國家標率（CNS ) A4^格（210X297公釐）量 E Η ____ High setting controller circuit T ---- Low setting controller circuit DW ... Flow converter circuit PFC. + Power factor control circuit n- ^^^ 1 In ^^^ 1 ^^ 1— ^ ^^ 1 ^^^ 1 ^ -I ^^^ 1 1 flJ (Please read the notes on the back before filling in this page) Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumption Cooperation Du Yindong _15 ~ This paper size applies to China National Standard Rate (CNS) A4 ^ (210X297 mm)