CA2241684C - Transistors a effet de champ, a seuil de fermi et a canal court, comportant une zone terminale du champ de drain, et leurs procedes de fabrication - Google Patents
Transistors a effet de champ, a seuil de fermi et a canal court, comportant une zone terminale du champ de drain, et leurs procedes de fabrication Download PDFInfo
- Publication number
- CA2241684C CA2241684C CA002241684A CA2241684A CA2241684C CA 2241684 C CA2241684 C CA 2241684C CA 002241684 A CA002241684 A CA 002241684A CA 2241684 A CA2241684 A CA 2241684A CA 2241684 C CA2241684 C CA 2241684C
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- CA
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- Prior art keywords
- source
- tub
- region
- drain
- substrate
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- Expired - Fee Related
Links
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Un TEC de Fermi comprend une zone terminale de champ de drain située entre les zones drain et source, de façon à diminuer et de préférence à éviter l'injection dans le canal de porteurs provenant de la source par suite à la polarisation du drain. La zone terminale du champ de drain empêche l'abaissement excessif de l'effet barrière induit par le drain, tout en laissant persister un faible champ vertical dans le canal. Elle est de préférence constituée d'une couche contre-dopée enfouie entre la source et le drain, et s'étendant sous la surface du substrat depuis la source vers le drain. On peut former la couche contre-dopée enfouie en utilisant une structure à trois cuvettes qui donne trois couches entre la source et le drain éloignés l'un de l'autre. La zone terminale du champ de drain peut également être utilisée dans un transistor à effet de champ MOS classique. On forme de préférence la zone canal par dépôt épitaxial, ce qui évite l'obligation de la contre-doper par rapport à la zone terminale du champ de drain. Ceci permet une plus grande mobilité des porteurs dans le canal pour un niveau de dopage donné.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/597,711 US5698884A (en) | 1996-02-07 | 1996-02-07 | Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same |
| US08/597,711 | 1996-02-07 | ||
| PCT/US1997/002108 WO1997029519A1 (fr) | 1996-02-07 | 1997-02-04 | Transistors a effet de champ, a seuil de fermi et a canal court, comportant une zone terminale du champ de drain, et leurs procedes de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2241684A1 CA2241684A1 (fr) | 1997-08-14 |
| CA2241684C true CA2241684C (fr) | 2006-08-01 |
Family
ID=36764337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002241684A Expired - Fee Related CA2241684C (fr) | 1996-02-07 | 1997-02-04 | Transistors a effet de champ, a seuil de fermi et a canal court, comportant une zone terminale du champ de drain, et leurs procedes de fabrication |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2241684C (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10326018B1 (en) * | 2018-02-28 | 2019-06-18 | Nxp Usa, Inc. | RF switches, integrated circuits, and devices with multi-gate field effect transistors and voltage leveling circuits, and methods of their fabrication |
-
1997
- 1997-02-04 CA CA002241684A patent/CA2241684C/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA2241684A1 (fr) | 1997-08-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |