CA2225422A1 - Dispositif et procede de traitement de surface par laser - Google Patents

Dispositif et procede de traitement de surface par laser

Info

Publication number
CA2225422A1
CA2225422A1 CA002225422A CA2225422A CA2225422A1 CA 2225422 A1 CA2225422 A1 CA 2225422A1 CA 002225422 A CA002225422 A CA 002225422A CA 2225422 A CA2225422 A CA 2225422A CA 2225422 A1 CA2225422 A1 CA 2225422A1
Authority
CA
Canada
Prior art keywords
laser
surface treatment
treatment device
change
generally similar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002225422A
Other languages
English (en)
Other versions
CA2225422C (fr
Inventor
Pierre Boher
Marc Stehle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe de Commercialisation des Produits de la Recherche Appliquee SOCPRA
Original Assignee
Societe De Production Et De Recherches Appliquees
Pierre Boher
Marc Stehle
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe De Production Et De Recherches Appliquees, Pierre Boher, Marc Stehle filed Critical Societe De Production Et De Recherches Appliquees
Publication of CA2225422A1 publication Critical patent/CA2225422A1/fr
Application granted granted Critical
Publication of CA2225422C publication Critical patent/CA2225422C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Removal Of Insulation Or Armoring From Wires Or Cables (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CA002225422A 1995-08-11 1996-07-03 Dispositif et procede de traitement de surface par laser Expired - Fee Related CA2225422C (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR95/09778 1995-08-11
FR9509778A FR2737806B1 (fr) 1995-08-11 1995-08-11 Dispositif et procede de traitement de surface par laser
PCT/FR1996/001034 WO1997007539A1 (fr) 1995-08-11 1996-07-03 Dispositif et procede de traitement de surface par laser

Publications (2)

Publication Number Publication Date
CA2225422A1 true CA2225422A1 (fr) 1997-02-27
CA2225422C CA2225422C (fr) 2007-05-22

Family

ID=9481898

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002225422A Expired - Fee Related CA2225422C (fr) 1995-08-11 1996-07-03 Dispositif et procede de traitement de surface par laser

Country Status (9)

Country Link
US (1) US6073464A (fr)
EP (1) EP0843889B1 (fr)
JP (1) JP3996641B2 (fr)
KR (1) KR100403792B1 (fr)
AT (1) ATE278250T1 (fr)
CA (1) CA2225422C (fr)
DE (1) DE69633511T2 (fr)
FR (1) FR2737806B1 (fr)
WO (1) WO1997007539A1 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2737786B1 (fr) * 1995-08-11 1997-09-12 Soc D Production Et De Rech Ap Dispositif optique pour homogeneiser un faisceau laser
FR2737814B1 (fr) * 1995-08-11 1997-09-12 Soc D Production Et De Rech Ap Procede et dispositif de commande d'une source laser a plusieurs modules laser pour optimiser le traitement de surface par laser
TW444275B (en) * 1998-01-13 2001-07-01 Toshiba Corp Processing device, laser annealing device, laser annealing method, manufacturing device and substrate manufacturing device for panel display
KR100322135B1 (ko) * 1999-03-11 2002-02-04 윤종용 잔류 기계적 스트레스를 최대화하는 광섬유 및 이를 이용한 광섬유 격자 제작방법
JP3447654B2 (ja) * 2000-03-24 2003-09-16 Ｎｅｃエレクトロニクス株式会社 異方性薄膜評価法及び評価装置
WO2003014732A1 (fr) * 2001-08-10 2003-02-20 Symyx Technologies, Inc. Appareils et procedes permettant d'elaborer et de tester des pre-formulations et systemes correspondants
TW586173B (en) * 2002-11-29 2004-05-01 Au Optronics Corp Method of monitoring a laser crystallization process
TWI284443B (en) * 2003-01-07 2007-07-21 Au Optronics Corp Automatic control system and method of laser energy
US7109087B2 (en) * 2003-10-03 2006-09-19 Applied Materials, Inc. Absorber layer for DSA processing
JP2007507900A (ja) * 2003-10-03 2007-03-29 アプライド　マテリアルズ　インコーポレイテッド 動的表面アニール処理のための吸収層
JP2006040949A (ja) * 2004-07-22 2006-02-09 Advanced Lcd Technologies Development Center Co Ltd レーザー結晶化装置及びレーザー結晶化方法
JP2006088163A (ja) * 2004-09-21 2006-04-06 Fanuc Ltd レーザ装置
US7796260B1 (en) * 2006-04-25 2010-09-14 J.A. Woollam Co., Inc. System and method of controlling intensity of an electromagnetic beam
JP5443377B2 (ja) * 2007-11-21 2014-03-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク エピタキシャルに配向された厚膜を調製するための調製システムおよび方法
CN102712540B (zh) * 2009-08-27 2014-12-17 麦卡利斯特技术有限责任公司 陶瓷绝缘体及其使用和制造方法
US8994943B2 (en) * 2012-11-30 2015-03-31 Infineon Technologies Ag Selectivity by polarization
JP6348149B2 (ja) * 2016-07-08 2018-06-27 ファナック株式会社 ロボットを用いてレーザ加工を行うレーザ加工ロボットシステム
JP6464213B2 (ja) * 2017-02-09 2019-02-06 ファナック株式会社 レーザ加工ヘッドおよび撮影装置を備えるレーザ加工システム
FR3075377B1 (fr) * 2017-12-19 2020-10-16 Commissariat Energie Atomique Procede de caracterisation et de controle de l'homogeneite de pieces metalliques fabriquees par frittage laser
GB2571997B (en) 2018-03-16 2021-10-27 X Fab Texas Inc Use of wafer brightness to monitor laser anneal process and laser anneal tool

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168636A (ja) * 1983-03-15 1984-09-22 Toshiba Corp ド−ズ量評価方法
US4897154A (en) * 1986-07-03 1990-01-30 International Business Machines Corporation Post dry-etch cleaning method for restoring wafer properties
US4962065A (en) * 1989-02-13 1990-10-09 The University Of Arkansas Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices
JPH03295251A (ja) * 1990-04-12 1991-12-26 Sumitomo Electric Ind Ltd 半導体基板の表面状態検査方法
US5313044A (en) * 1992-04-28 1994-05-17 Duke University Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor
JPH06288835A (ja) * 1993-03-30 1994-10-18 Shimadzu Corp エリプソメータ
US5399229A (en) * 1993-05-13 1995-03-21 Texas Instruments Incorporated System and method for monitoring and evaluating semiconductor wafer fabrication
KR100306527B1 (ko) * 1994-06-15 2002-06-26 구사마 사부로 박막반도체장치의제조방법,박막반도체장치
FR2737779B1 (fr) * 1995-08-11 1997-09-12 Soc D Production Et De Rech Ap Dispositif ellipsometre a haute resolution spatiale
FR2737786B1 (fr) * 1995-08-11 1997-09-12 Soc D Production Et De Rech Ap Dispositif optique pour homogeneiser un faisceau laser
FR2737814B1 (fr) * 1995-08-11 1997-09-12 Soc D Production Et De Rech Ap Procede et dispositif de commande d'une source laser a plusieurs modules laser pour optimiser le traitement de surface par laser
US5798837A (en) * 1997-07-11 1998-08-25 Therma-Wave, Inc. Thin film optical measurement system and method with calibrating ellipsometer
US5864393A (en) * 1997-07-30 1999-01-26 Brown University Research Foundation Optical method for the determination of stress in thin films

Also Published As

Publication number Publication date
KR100403792B1 (ko) 2004-03-24
FR2737806B1 (fr) 1997-09-12
DE69633511T2 (de) 2005-11-17
CA2225422C (fr) 2007-05-22
KR19990036247A (ko) 1999-05-25
US6073464A (en) 2000-06-13
DE69633511D1 (de) 2004-11-04
ATE278250T1 (de) 2004-10-15
EP0843889B1 (fr) 2004-09-29
JP3996641B2 (ja) 2007-10-24
JPH11510960A (ja) 1999-09-21
FR2737806A1 (fr) 1997-02-14
WO1997007539A1 (fr) 1997-02-27
EP0843889A1 (fr) 1998-05-27

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