CA2093144A1 - Procede de synthese de diamants par flamme ou plasma, dans des conditions d'ecoulement transitoire turbulentes - Google Patents

Procede de synthese de diamants par flamme ou plasma, dans des conditions d'ecoulement transitoire turbulentes

Info

Publication number
CA2093144A1
CA2093144A1 CA002093144A CA2093144A CA2093144A1 CA 2093144 A1 CA2093144 A1 CA 2093144A1 CA 002093144 A CA002093144 A CA 002093144A CA 2093144 A CA2093144 A CA 2093144A CA 2093144 A1 CA2093144 A1 CA 2093144A1
Authority
CA
Canada
Prior art keywords
partially turbulent
diamond
mixture
flow
partially
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002093144A
Other languages
English (en)
Inventor
Keith A. Snail
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Navy
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2093144A1 publication Critical patent/CA2093144A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/275—Diamond only using combustion torches
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA002093144A 1990-09-24 1991-09-20 Procede de synthese de diamants par flamme ou plasma, dans des conditions d'ecoulement transitoire turbulentes Abandoned CA2093144A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/587,328 1990-09-24
US07/587,328 US5174983A (en) 1990-09-24 1990-09-24 Flame or plasma synthesis of diamond under turbulent and transition flow conditions

Publications (1)

Publication Number Publication Date
CA2093144A1 true CA2093144A1 (fr) 1992-03-25

Family

ID=24349357

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002093144A Abandoned CA2093144A1 (fr) 1990-09-24 1991-09-20 Procede de synthese de diamants par flamme ou plasma, dans des conditions d'ecoulement transitoire turbulentes

Country Status (6)

Country Link
US (1) US5174983A (fr)
EP (1) EP0552249A4 (fr)
JP (1) JPH06504254A (fr)
AU (1) AU8761691A (fr)
CA (1) CA2093144A1 (fr)
WO (1) WO1992005110A1 (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5786068A (en) * 1991-05-03 1998-07-28 Advanced Refractory Technologies, Inc. Electrically tunable coatings
US5718976A (en) * 1991-05-03 1998-02-17 Advanced Refractory Technologies, Inc. Erosion resistant diamond-like nanocomposite coatings for optical components
US5352493A (en) * 1991-05-03 1994-10-04 Veniamin Dorfman Method for forming diamond-like nanocomposite or doped-diamond-like nanocomposite films
US5728465A (en) * 1991-05-03 1998-03-17 Advanced Refractory Technologies, Inc. Diamond-like nanocomposite corrosion resistant coatings
US5236545A (en) * 1992-10-05 1993-08-17 The Board Of Governors Of Wayne State University Method for heteroepitaxial diamond film development
US5635254A (en) * 1993-01-12 1997-06-03 Martin Marietta Energy Systems, Inc. Plasma spraying method for forming diamond and diamond-like coatings
JPH06263595A (ja) * 1993-03-10 1994-09-20 Canon Inc ダイヤモンド被覆部材及びその製造方法
US5858465A (en) * 1993-03-24 1999-01-12 Georgia Tech Research Corporation Combustion chemical vapor deposition of phosphate films and coatings
ATE233327T1 (de) * 1993-03-24 2003-03-15 Georgia Tech Res Inst Verfahren und vorrichtung zur verbrennungs cvd von filmen und beschichtungen
US5505158A (en) * 1994-11-04 1996-04-09 The United States Of America As Represented By The Secretary Of The Navy Apparatus and method for achieving growth-etch deposition of diamond using a chopped oxygen-acetylene flame
US5628824A (en) * 1995-03-16 1997-05-13 The University Of Alabama At Birmingham Research Foundation High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition
DE59506058D1 (de) 1995-03-20 1999-07-01 Schmidt Hermann Verfahren zur chemothermischen umsetzung fliessfähiger verbindungen und konverter zur durchführung des verfahrens
US6468642B1 (en) 1995-10-03 2002-10-22 N.V. Bekaert S.A. Fluorine-doped diamond-like coatings
US5795648A (en) * 1995-10-03 1998-08-18 Advanced Refractory Technologies, Inc. Method for preserving precision edges using diamond-like nanocomposite film coatings
US5638251A (en) * 1995-10-03 1997-06-10 Advanced Refractory Technologies, Inc. Capacitive thin films using diamond-like nanocomposite materials
AU2716797A (en) * 1997-04-16 1998-11-11 RAKHIMOV, Aleksandr Tursunovich Process for obtaining diamond layers by gaseous-phase synthesis
DE19718618C2 (de) 1997-05-02 1999-12-02 Daimler Chrysler Ag Komposit-Struktur mit einem mehrere mikroelektronische Bauteile und eine Diamantschicht aufweisenden Wachstums-Substrat sowie Verfahren zur Herstellung der Komposit-Struktur
US6013980A (en) * 1997-05-09 2000-01-11 Advanced Refractory Technologies, Inc. Electrically tunable low secondary electron emission diamond-like coatings and process for depositing coatings
US6214473B1 (en) 1998-05-13 2001-04-10 Andrew Tye Hunt Corrosion-resistant multilayer coatings
KR100464856B1 (ko) * 2002-11-07 2005-01-05 삼성전자주식회사 표면 식각 방법 및 실리콘 기판 이면 식각 방법.
US7910166B2 (en) * 2005-04-26 2011-03-22 First Solar, Inc. System and method for depositing a material on a substrate
US7968145B2 (en) 2005-04-26 2011-06-28 First Solar, Inc. System and method for depositing a material on a substrate
US7927659B2 (en) * 2005-04-26 2011-04-19 First Solar, Inc. System and method for depositing a material on a substrate
US7931937B2 (en) * 2005-04-26 2011-04-26 First Solar, Inc. System and method for depositing a material on a substrate
US20090197014A1 (en) * 2008-02-04 2009-08-06 Atomic Energy Council - Institute Of Nuclear Energy Research Apparatus and method for coating diamond on work pieces via hot filament chemical vapor deposition
CN104694907B (zh) * 2015-03-04 2017-01-25 中国科学院大学 一种制备镍‑氮掺杂金刚石的射频放电气相沉积方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3772427A (en) * 1971-06-14 1973-11-13 Gen Electric Combustion process for producing high surface area silica
US4191735A (en) * 1973-06-07 1980-03-04 National Research Development Corporation Growth of synthetic diamonds
US4486286A (en) * 1982-09-28 1984-12-04 Nerken Research Corp. Method of depositing a carbon film on a substrate and products obtained thereby
US4859493A (en) * 1987-03-31 1989-08-22 Lemelson Jerome H Methods of forming synthetic diamond coatings on particles using microwaves
DE3884653T2 (de) * 1987-04-03 1994-02-03 Fujitsu Ltd Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant.
GB8709803D0 (en) * 1987-04-24 1987-05-28 Mcfadden J J Treatment of crohn's disease &c
JPS6464795A (en) * 1987-08-31 1989-03-10 Sasaoka Tekko Kk Scallion excision device
JP2584805B2 (ja) * 1987-12-19 1997-02-26 富士通株式会社 ダイヤモンド粒子の合成方法
JP2597497B2 (ja) * 1988-01-14 1997-04-09 洋一 広瀬 気相法ダイヤモンドの合成法
US4958590A (en) * 1989-09-06 1990-09-25 General Atomics Microwave traveling-wave diamond production device and method

Also Published As

Publication number Publication date
JPH06504254A (ja) 1994-05-19
AU8761691A (en) 1992-04-15
WO1992005110A1 (fr) 1992-04-02
US5174983A (en) 1992-12-29
EP0552249A4 (en) 1993-09-29
EP0552249A1 (fr) 1993-07-28

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Legal Events

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