CA2091053A1 - Detecteur de rayonnement infrarouge a puits quantique, a minibande de transport - Google Patents
Detecteur de rayonnement infrarouge a puits quantique, a minibande de transportInfo
- Publication number
- CA2091053A1 CA2091053A1 CA002091053A CA2091053A CA2091053A1 CA 2091053 A1 CA2091053 A1 CA 2091053A1 CA 002091053 A CA002091053 A CA 002091053A CA 2091053 A CA2091053 A CA 2091053A CA 2091053 A1 CA2091053 A1 CA 2091053A1
- Authority
- CA
- Canada
- Prior art keywords
- miniband
- layers
- semiconductor
- quantum wells
- transport
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 239000000969 carrier Substances 0.000 claims abstract description 17
- 230000005281 excited state Effects 0.000 claims abstract description 17
- 230000005855 radiation Effects 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000005283 ground state Effects 0.000 claims abstract description 11
- 230000005684 electric field Effects 0.000 claims abstract description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 12
- 238000010521 absorption reaction Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 44
- 230000003287 optical effect Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 241000272470 Circus Species 0.000 description 1
- 101100285518 Drosophila melanogaster how gene Proteins 0.000 description 1
- 101100156763 Schizosaccharomyces pombe (strain 972 / ATCC 24843) wos2 gene Proteins 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60628590A | 1990-10-31 | 1990-10-31 | |
| US606,285 | 1990-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2091053A1 true CA2091053A1 (fr) | 1992-05-01 |
Family
ID=24427344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002091053A Abandoned CA2091053A1 (fr) | 1990-10-31 | 1991-10-24 | Detecteur de rayonnement infrarouge a puits quantique, a minibande de transport |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0555402A1 (fr) |
| JP (1) | JPH06502743A (fr) |
| AU (1) | AU9030791A (fr) |
| CA (1) | CA2091053A1 (fr) |
| IL (1) | IL99855A0 (fr) |
| WO (1) | WO1992008250A1 (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL106130A (en) * | 1992-06-30 | 1996-10-19 | Martin Marietta Corp | Detector with minimal stripe transport of quantum sources and a method for detecting electromagnetic radiation |
| US5477060A (en) * | 1993-06-25 | 1995-12-19 | The United States Of America As Represented By The Secretary Of The Army | Infrared hot electron transistor with a superlattice base |
| FR2729789B1 (fr) * | 1993-09-10 | 1998-03-20 | Thomson Csf | Detecteur a puits quantique et procede de realisation |
| GB2298735A (en) * | 1995-03-08 | 1996-09-11 | Sharp Kk | Semiconductor device having a miniband |
| US5539206A (en) * | 1995-04-20 | 1996-07-23 | Loral Vought Systems Corporation | Enhanced quantum well infrared photodetector |
| SG68636A1 (en) * | 1997-09-27 | 1999-11-16 | Univ Singapore | Dual band infrared detector using step multiquantum wells with superlattice barriers |
| US6054718A (en) * | 1998-03-31 | 2000-04-25 | Lockheed Martin Corporation | Quantum well infrared photocathode having negative electron affinity surface |
| JP5282361B2 (ja) * | 2007-02-19 | 2013-09-04 | 富士通株式会社 | 量子井戸型光検知器及びその製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0821748B2 (ja) * | 1985-09-04 | 1996-03-04 | 株式会社日立製作所 | 半導体レ−ザ装置 |
| US4894526A (en) * | 1987-01-15 | 1990-01-16 | American Telephone And Telegraph Company, At&T Bell Laboratories | Infrared-radiation detector device |
| US5047822A (en) * | 1988-03-24 | 1991-09-10 | Martin Marietta Corporation | Electro-optic quantum well device |
| CA1314614C (fr) * | 1988-06-06 | 1993-03-16 | Clyde George Bethea | Detecteur de rayonnement par puits quantiques |
| EP0380939B1 (fr) * | 1989-01-31 | 1995-12-06 | International Business Machines Corporation | Photodétecteur à effet tunnel résonnant pour utilisation à grandes longueurs d'onde |
-
1991
- 1991-10-24 JP JP4500854A patent/JPH06502743A/ja active Pending
- 1991-10-24 EP EP92902033A patent/EP0555402A1/fr not_active Withdrawn
- 1991-10-24 WO PCT/US1991/008004 patent/WO1992008250A1/fr not_active Application Discontinuation
- 1991-10-24 AU AU90307/91A patent/AU9030791A/en not_active Abandoned
- 1991-10-24 CA CA002091053A patent/CA2091053A1/fr not_active Abandoned
- 1991-10-25 IL IL99855A patent/IL99855A0/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| IL99855A0 (en) | 1992-08-18 |
| JPH06502743A (ja) | 1994-03-24 |
| WO1992008250A1 (fr) | 1992-05-14 |
| EP0555402A1 (fr) | 1993-08-18 |
| AU9030791A (en) | 1992-05-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |