CA2084272A1 - Methode de fabrication pour dispositif a jonction de josephson ayant un lien faible creer a la limite de grains artificiels - Google Patents

Methode de fabrication pour dispositif a jonction de josephson ayant un lien faible creer a la limite de grains artificiels

Info

Publication number
CA2084272A1
CA2084272A1 CA2084272A CA2084272A CA2084272A1 CA 2084272 A1 CA2084272 A1 CA 2084272A1 CA 2084272 A CA2084272 A CA 2084272A CA 2084272 A CA2084272 A CA 2084272A CA 2084272 A1 CA2084272 A1 CA 2084272A1
Authority
CA
Canada
Prior art keywords
josephson junction
grain boundary
weak link
junction device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2084272A
Other languages
English (en)
Other versions
CA2084272C (fr
Inventor
So Tanaka
Hiroshi Inada
Michitomo Iiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
So Tanaka
Hiroshi Inada
Michitomo Iiyama
Sumitomo Electric Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by So Tanaka, Hiroshi Inada, Michitomo Iiyama, Sumitomo Electric Industries, Ltd. filed Critical So Tanaka
Publication of CA2084272A1 publication Critical patent/CA2084272A1/fr
Application granted granted Critical
Publication of CA2084272C publication Critical patent/CA2084272C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/818—Coating
    • Y10S505/82—And etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/917—Mechanically manufacturing superconductor
    • Y10S505/922—Making josephson junction device

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
CA002084272A 1991-12-02 1992-12-01 Methode de fabrication pour dispositif a jonction de josephson ayant un lien faible creer a la limite de grains artificiels Expired - Fee Related CA2084272C (fr)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP34394191 1991-12-02
JP343941/1991 1991-12-02
JP348969/1991 1991-12-06
JP34896991 1991-12-06
JP35030391 1991-12-09
JP350303/1991 1991-12-09
JP4327399A JPH05251771A (ja) 1991-12-02 1992-11-12 人工粒界型ジョセフソン接合素子およびその作製方法
JP327399/1992 1992-11-12

Publications (2)

Publication Number Publication Date
CA2084272A1 true CA2084272A1 (fr) 1993-06-03
CA2084272C CA2084272C (fr) 1996-12-17

Family

ID=27480391

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002084272A Expired - Fee Related CA2084272C (fr) 1991-12-02 1992-12-01 Methode de fabrication pour dispositif a jonction de josephson ayant un lien faible creer a la limite de grains artificiels

Country Status (5)

Country Link
US (1) US5439875A (fr)
EP (1) EP0545816B1 (fr)
JP (1) JPH05251771A (fr)
CA (1) CA2084272C (fr)
DE (1) DE69218896T2 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0973208B1 (fr) * 1992-07-28 2005-04-27 Nippon Telegraph And Telephone Corporation Dispositif à adaptation de grille et procédé pour sa fabrication
DE4323040A1 (de) * 1993-07-09 1995-01-12 Siemens Ag Josephson-Sensoreinrichtung mit supraleitenden Teilen aus metalloxidischem Supraleitermaterial
KR100264006B1 (ko) * 1993-11-29 2000-08-16 이형도 고온초전도 조셉슨소자의 제조방법
FI111198B (fi) * 1993-12-27 2003-06-13 Sumitomo Electric Industries Menetelmä portaan muodostamiseksi substraatin kasvatuspinnalle oksidisuprajohdetta käyttävää suprajohtavaa laitetta varten sekä menetelmä porrastyyppisen Josephson-liitoslaitteen valmistamiseksi
JPH07240543A (ja) * 1994-02-25 1995-09-12 Sumitomo Electric Ind Ltd 成膜用基板に段差を形成する方法
KR0148596B1 (ko) * 1994-11-28 1998-10-15 양승택 결정 입계 채널을 갖는 초전도 전계효과 소자와 그 제조방법
AU4941697A (en) * 1996-11-18 1998-06-10 Nkt Research Center A/S Superconductive josephson junction, method of its preparation, and it s use in squids
US5994276A (en) * 1997-09-08 1999-11-30 Mcmaster University Composite high Tc superconductor film
DE19808778C2 (de) * 1998-03-03 1999-12-09 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung eines ABO¶3¶-Substrates mit einer Stufe
AUPP590798A0 (en) * 1998-09-14 1998-10-08 Commonwealth Scientific And Industrial Research Organisation Method of manufacture of high temperature superconductors
KR100513963B1 (ko) * 2003-02-13 2005-09-13 학교법인 포항공과대학교 고온초전도 선천성 조셉슨접합을 이용한 초전도 양자간섭소자 제조 방법
CN101894906B (zh) * 2010-06-13 2012-07-04 中国科学院上海微系统与信息技术研究所 超导台阶结制备方法
US9741918B2 (en) 2013-10-07 2017-08-22 Hypres, Inc. Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit
EP3676882B1 (fr) 2017-08-31 2021-06-30 Google LLC Fabrication d'un dispositif à l'aide d'un empilement multicouche
US11552236B2 (en) 2020-01-24 2023-01-10 International Business Machines Corporation Superconducting qubit capacitance and frequency of operation tuning

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0763100B2 (ja) * 1986-05-21 1995-07-05 日本電信電話株式会社 ジヨセフソン接合素子及びその製法
US5157466A (en) * 1991-03-19 1992-10-20 Conductus, Inc. Grain boundary junctions in high temperature superconductor films
DE69215993T2 (de) * 1991-07-16 1997-06-19 Sumitomo Electric Industries Vorrichtung mit Josephson-Übergang aus supraleitendem Oxyd und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
CA2084272C (fr) 1996-12-17
EP0545816B1 (fr) 1997-04-09
US5439875A (en) 1995-08-08
EP0545816A2 (fr) 1993-06-09
JPH05251771A (ja) 1993-09-28
DE69218896T2 (de) 1997-11-27
DE69218896D1 (de) 1997-05-15
EP0545816A3 (en) 1993-06-30

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