CA2020302A1 - Substrat enduit d'une pellicule supraconductrice - Google Patents

Substrat enduit d'une pellicule supraconductrice

Info

Publication number
CA2020302A1
CA2020302A1 CA2020302A CA2020302A CA2020302A1 CA 2020302 A1 CA2020302 A1 CA 2020302A1 CA 2020302 A CA2020302 A CA 2020302A CA 2020302 A CA2020302 A CA 2020302A CA 2020302 A1 CA2020302 A1 CA 2020302A1
Authority
CA
Canada
Prior art keywords
substrate
superconductor layer
thin film
superconducting thin
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2020302A
Other languages
English (en)
Other versions
CA2020302C (fr
Inventor
Kenjiro Higaki
Keizo Harada
Takashi Matsuura
Hitoshi Oyama
Hideo Itozaki
Shuji Yazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27323043&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CA2020302(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Individual filed Critical Individual
Publication of CA2020302A1 publication Critical patent/CA2020302A1/fr
Application granted granted Critical
Publication of CA2020302C publication Critical patent/CA2020302C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5072—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with oxides or hydroxides not covered by C04B41/5025
    • C04B41/5074—Copper oxide or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/93—Electric superconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
CA002020302A 1989-06-30 1990-07-03 Substrat enduit d'une pellicule supraconductrice Expired - Fee Related CA2020302C (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP16867789 1989-06-30
JP19101489 1989-07-24
JP191014/1989 1989-07-24
JP338916/1989 1989-12-27
JP33891689 1989-12-27

Publications (2)

Publication Number Publication Date
CA2020302A1 true CA2020302A1 (fr) 1991-01-25
CA2020302C CA2020302C (fr) 1995-06-27

Family

ID=27323043

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002020302A Expired - Fee Related CA2020302C (fr) 1989-06-30 1990-07-03 Substrat enduit d'une pellicule supraconductrice

Country Status (5)

Country Link
US (1) US5712227A (fr)
EP (2) EP0619283A3 (fr)
AU (1) AU635040B2 (fr)
CA (1) CA2020302C (fr)
DE (1) DE69016283T3 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69112282T2 (de) * 1990-05-30 1996-05-02 Sumitomo Electric Industries Verfahren zur Herstellung Hochtemperatur supraleitender Dünnschichten.
KR100235799B1 (ko) * 1990-05-30 1999-12-15 구라우치 노리타카 산화물 초전도체를 이용한 초전도 접합형성방법
CA2045890C (fr) * 1990-06-28 1998-10-06 Takashi Matsuura Procede de preparation de pellicule mince d'oxyde supraconducteur
US5508255A (en) * 1994-07-05 1996-04-16 Superconductor Technologies, Inc. Epitaxial thallium high temperature superconducting films formed via a nucleation layer
GB9424766D0 (en) * 1994-12-07 1995-02-08 Wellcome Found Pharmaceutical composition
DE19544698C1 (de) * 1995-11-30 1997-06-05 Abb Research Ltd Kupferoxid enthaltendes Magnesiumoxid-Substrat für einen Hochtemperatursupraleiter und Verfahren zu dessen Herstellung
US6541136B1 (en) * 1998-09-14 2003-04-01 The Regents Of The University Of California Superconducting structure
EP1126971A2 (fr) * 1998-09-14 2001-08-29 The Regents of The University of California Structure supraconductrice comprenant des compositions a base de melanges d'oxydes de cuivre, de barium et de terres rares
WO2003034448A1 (fr) * 2000-12-06 2003-04-24 The Regents Of The University Of California Structure composite superconductrice
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US20020195057A1 (en) * 2001-06-21 2002-12-26 Motorola, Inc. Apparatus for fabricating semiconductor structures and method of forming the same
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6716545B1 (en) * 2001-11-21 2004-04-06 The Regents Of The University Of California High temperature superconducting composite conductors
DE10248962B4 (de) * 2002-10-21 2007-10-25 THEVA DüNNSCHICHTTECHNIK GMBH Verfahren zur Herstellung einer Hochtemperatur-Supraleiterschicht
US6806202B2 (en) 2002-12-03 2004-10-19 Motorola, Inc. Method of removing silicon oxide from a surface of a substrate

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910002311B1 (ko) * 1987-02-27 1991-04-11 가부시기가이샤 히다찌세이사꾸쇼 초전도 디바이스
EP0283312A3 (fr) * 1987-03-20 1990-09-26 Fujikura Ltd. Procédé pour la fabrication d'un fil supraconducteur et fil ainsi obtenu
US4983575A (en) * 1987-03-25 1991-01-08 Hitachi, Ltd. Superconducting thin films made of stacked composite oxide layers
US5057484A (en) * 1987-05-01 1991-10-15 Fujikura Ltd. Single crystal oxide superconductor and method of producing the same
JPS63283085A (ja) * 1987-05-15 1988-11-18 Hitachi Ltd 超電導デバイス
JPH0776155B2 (ja) * 1987-06-26 1995-08-16 古河電気工業株式会社 セラミックス超電導成形体の製造方法
NL8701779A (nl) * 1987-07-28 1989-02-16 Philips Nv Supergeleidende dunne laag.
JPS6431475A (en) * 1987-07-28 1989-02-01 Univ Tokyo Superconducting device and forming method thereof
NL8701788A (nl) * 1987-07-29 1989-02-16 Philips Nv Werkwijze voor het vervaardigen van een supergeleidende dunne laag.
US4980339A (en) * 1987-07-29 1990-12-25 Matsushita Electric Industrial Co., Ltd. Superconductor structure
US5079222A (en) * 1987-08-31 1992-01-07 Semiconductor Energy Laboratory Co., Ltd. Superconducting ceramic circuits and manufacturing method for the same
KR910007384B1 (ko) * 1987-09-16 1991-09-25 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 초전도 산화물 형성방법 및 장치
EP0325877B1 (fr) * 1987-12-26 1994-03-09 Sumitomo Electric Industries Limited Substrat semi-conducteur avec une couche mince supraconductrice
US5084438A (en) * 1988-03-23 1992-01-28 Nec Corporation Electronic device substrate using silicon semiconductor substrate
US5034359A (en) * 1988-04-08 1991-07-23 Kabushiki Kaisha Toshiba Insulating composition
KR900017216A (ko) * 1988-04-30 1990-11-15 나까하라 쯔네오 초전도체 박막을 가지는 반도체 기판과 그 제조 방법
US5232900A (en) * 1988-06-09 1993-08-03 Superconductor Development Corporation Superconductor structure
US5034378A (en) * 1988-12-15 1991-07-23 James P. Cox Synergistic flavor enhancement nutritional compositions and methods
US5087605A (en) * 1989-06-01 1992-02-11 Bell Communications Research, Inc. Layered lattice-matched superconducting device and method of making
US5118663A (en) * 1990-09-21 1992-06-02 General Atomics Fabrication of silver coated high temperature ceramic superconductor fiber with metal substrate
US5162294A (en) * 1991-02-28 1992-11-10 Westinghouse Electric Corp. Buffer layer for copper oxide based superconductor growth on sapphire

Also Published As

Publication number Publication date
EP0406126B1 (fr) 1995-01-25
CA2020302C (fr) 1995-06-27
EP0406126A1 (fr) 1991-01-02
AU5860690A (en) 1991-01-10
AU635040B2 (en) 1993-03-11
EP0406126B2 (fr) 1997-12-17
DE69016283T3 (de) 1998-04-02
US5712227A (en) 1998-01-27
EP0619283A2 (fr) 1994-10-12
DE69016283T2 (de) 1995-08-03
EP0619283A3 (fr) 1994-11-30
DE69016283D1 (de) 1995-03-09

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