CA2078940A1 - Compound semiconductor device - Google Patents

Compound semiconductor device

Info

Publication number
CA2078940A1
CA2078940A1 CA 2078940 CA2078940A CA2078940A1 CA 2078940 A1 CA2078940 A1 CA 2078940A1 CA 2078940 CA2078940 CA 2078940 CA 2078940 A CA2078940 A CA 2078940A CA 2078940 A1 CA2078940 A1 CA 2078940A1
Authority
CA
Canada
Prior art keywords
semiconductor layer
layer
doped semiconductor
undoped
cap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA 2078940
Other languages
French (fr)
Other versions
CA2078940C (en
Inventor
Yoshikazu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CA2078940A1 publication Critical patent/CA2078940A1/en
Application granted granted Critical
Publication of CA2078940C publication Critical patent/CA2078940C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

A compound semiconductor device includes an undoped semiconductor layer; a doped semiconductor layer formed on the undoped semiconductor layer and having smaller electron affinity than the undoped semiconductor layer; a gate electrode formed on the doped semiconductor layer; a cap layer formed on the doped semiconductor layer; and a source electrode and a drain electrode respectively formed on the cap layer. In the device, an undoped-material layer having greater electron affinity than the doped semiconductor layer and the cap layer, is formed between the doped semiconductor layer and the cap layer. A layer which has the same composition and impurities as those of the doped semiconductor layer and whose impurity concentration is sufficiently higher than an impurity concentration of the doped semiconductor layer may, be provided between the doped semiconductor layer and the cap layer.
CA 2078940 1991-10-29 1992-09-23 Compound semiconductor device Expired - Fee Related CA2078940C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31182891A JPH05121455A (en) 1991-10-29 1991-10-29 Compound semiconductor device
JPHEI3-311828 1991-10-29

Publications (2)

Publication Number Publication Date
CA2078940A1 true CA2078940A1 (en) 1993-04-30
CA2078940C CA2078940C (en) 1996-11-12

Family

ID=18021893

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2078940 Expired - Fee Related CA2078940C (en) 1991-10-29 1992-09-23 Compound semiconductor device

Country Status (2)

Country Link
JP (1) JPH05121455A (en)
CA (1) CA2078940C (en)

Also Published As

Publication number Publication date
JPH05121455A (en) 1993-05-18
CA2078940C (en) 1996-11-12

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Legal Events

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