CA2063600A1 - Narrow band excimer laser and wavelength detecting apparatus - Google Patents

Narrow band excimer laser and wavelength detecting apparatus

Info

Publication number
CA2063600A1
CA2063600A1 CA 2063600 CA2063600A CA2063600A1 CA 2063600 A1 CA2063600 A1 CA 2063600A1 CA 2063600 CA2063600 CA 2063600 CA 2063600 A CA2063600 A CA 2063600A CA 2063600 A1 CA2063600 A1 CA 2063600A1
Authority
CA
Canada
Prior art keywords
light
wavelength
laser
detected
etalon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA 2063600
Other languages
English (en)
French (fr)
Inventor
Osamu Wakabayashi
Masahiko Kowaka
Yukio Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1181680A external-priority patent/JP2688991B2/ja
Priority claimed from JP1208762A external-priority patent/JP2614768B2/ja
Application filed by Individual filed Critical Individual
Publication of CA2063600A1 publication Critical patent/CA2063600A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566Polarisation control
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J9/0246Measuring optical wavelength
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/08004Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H01S3/08009Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/139Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1394Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length by using an active reference, e.g. second laser, klystron or other standard frequency source
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22Gases
    • H01S3/223Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/0014Monitoring arrangements not otherwise provided for
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/08004Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
CA 2063600 1989-07-14 1990-07-12 Narrow band excimer laser and wavelength detecting apparatus Abandoned CA2063600A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP181680/1989 1989-07-14
JP1181680A JP2688991B2 (ja) 1989-07-14 1989-07-14 狭帯域発振エキシマレーザ
JP1208762A JP2614768B2 (ja) 1989-08-11 1989-08-11 波長検出装置
JP208762/1989 1989-08-11

Publications (1)

Publication Number Publication Date
CA2063600A1 true CA2063600A1 (en) 1991-01-15

Family

ID=26500765

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2063600 Abandoned CA2063600A1 (en) 1989-07-14 1990-07-12 Narrow band excimer laser and wavelength detecting apparatus

Country Status (3)

Country Link
CA (1) CA2063600A1 (ja)
DE (1) DE4091247T1 (ja)
WO (1) WO1991001579A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4401131C2 (de) * 1994-01-17 2003-07-03 Lambda Physik Ag Laser zur Erzeugung schmalbandiger und abstimmbarer Emission
DE102004010825A1 (de) * 2004-02-27 2005-04-21 Zeiss Carl Smt Ag Verfahren und Vorrichtung zur Kohärenzgradbestimmung von Strahlung
TWI725827B (zh) * 2020-04-24 2021-04-21 力晶積成電子製造股份有限公司 影像感測模組

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5120691A (ja) * 1974-08-13 1976-02-19 Mitsubishi Electric Corp Reezahatsushinki
US4016504A (en) * 1976-04-12 1977-04-05 Molectron Corporation Optical beam expander for dye laser
US4173442A (en) * 1977-05-27 1979-11-06 The United States Of America As Represented By The Secretary Of Commerce Apparatus and method for determination of wavelength
JPS6046837B2 (ja) * 1980-03-11 1985-10-18 日本電気株式会社 レ−ザ装置
US4601036A (en) * 1982-09-30 1986-07-15 Honeywell Inc. Rapidly tunable laser
JPS63107177A (ja) * 1986-10-24 1988-05-12 Komatsu Ltd レ−ザ光の波長検出装置
JPH01183873A (ja) * 1988-01-18 1989-07-21 Mitsubishi Electric Corp レーザ波長の安定化方法及び波長安定化レーザ装置
JP2649378B2 (ja) * 1988-04-27 1997-09-03 株式会社小松製作所 狭帯域発振エキシマレーザの波長異常検出装置
US4942583A (en) * 1988-06-17 1990-07-17 Hewlett-Packard Company Misalignment-tolerant, grating-tuned external-cavity laser
JPH0244219A (ja) * 1988-08-04 1990-02-14 Matsushita Electric Ind Co Ltd 波長検出装置
JPH02121380A (ja) * 1988-10-29 1990-05-09 Toshiba Corp 狭帯域レーザ装置

Also Published As

Publication number Publication date
WO1991001579A1 (fr) 1991-02-07
DE4091247T1 (ja) 1992-04-23

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