CA2061187A1 - Materiau de memoire optique pouvant changer d'etat et dispositif utilisant ce materiau - Google Patents

Materiau de memoire optique pouvant changer d'etat et dispositif utilisant ce materiau

Info

Publication number
CA2061187A1
CA2061187A1 CA2061187A CA2061187A CA2061187A1 CA 2061187 A1 CA2061187 A1 CA 2061187A1 CA 2061187 A CA2061187 A CA 2061187A CA 2061187 A CA2061187 A CA 2061187A CA 2061187 A1 CA2061187 A1 CA 2061187A1
Authority
CA
Canada
Prior art keywords
state
memory material
optical memory
energy
changeable optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2061187A
Other languages
English (en)
Other versions
CA2061187C (fr
Inventor
David A. Strand
Stanford R. Ovshinsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
David A. Strand
Stanford R. Ovshinsky
Energy Conversion Devices, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24636116&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CA2061187(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by David A. Strand, Stanford R. Ovshinsky, Energy Conversion Devices, Inc. filed Critical David A. Strand
Publication of CA2061187A1 publication Critical patent/CA2061187A1/fr
Application granted granted Critical
Publication of CA2061187C publication Critical patent/CA2061187C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0055—Erasing
    • G11B7/00557—Erasing involving phase-change media
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/005—Arrangements for writing information into, or reading information out from, a digital store with combined beam-and individual cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Holo Graphy (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Glass Compositions (AREA)
  • Vending Machines For Individual Products (AREA)
  • Farming Of Fish And Shellfish (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
  • Radiation Pyrometers (AREA)
CA002061187A 1991-02-15 1992-02-13 Materiau de memoire optique pouvant changer d'etat et dispositif utilisant ce materiau Expired - Fee Related CA2061187C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/657,170 1991-02-15
US07/657,170 US5128099A (en) 1991-02-15 1991-02-15 Congruent state changeable optical memory material and device

Publications (2)

Publication Number Publication Date
CA2061187A1 true CA2061187A1 (fr) 1992-08-16
CA2061187C CA2061187C (fr) 1998-11-17

Family

ID=24636116

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002061187A Expired - Fee Related CA2061187C (fr) 1991-02-15 1992-02-13 Materiau de memoire optique pouvant changer d'etat et dispositif utilisant ce materiau

Country Status (8)

Country Link
US (1) US5128099A (fr)
EP (2) EP0499273B1 (fr)
JP (2) JPH04337532A (fr)
KR (1) KR100245901B1 (fr)
AT (1) ATE227878T1 (fr)
CA (1) CA2061187C (fr)
DE (1) DE69232844T2 (fr)
TW (1) TW279903B (fr)

Families Citing this family (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5233599A (en) * 1990-03-14 1993-08-03 Matsushita Electric Industrial Co., Ltd. Optical disk with a recording layer composed of tellurium, antimony, and germanium
JP2556183B2 (ja) * 1990-09-11 1996-11-20 富士ゼロックス株式会社 光学的記録方法とこの方法を用いる光記録媒体
JPH07141693A (ja) * 1993-09-22 1995-06-02 Toshiba Corp 情報記録媒体
US5458941A (en) * 1994-06-09 1995-10-17 Minnesota Mining And Manufacturing Company Optical recording medium exhibiting eutectic phase equilbria
WO1996011471A1 (fr) * 1994-10-05 1996-04-18 Asahi Kasei Kogyo Kabushiki Kaisha Disque optique a mode de changement de phase et son procede de fabrication
US5583734A (en) * 1994-11-10 1996-12-10 Raychem Corporation Surge arrester with overvoltage sensitive grounding switch
EP0825595B1 (fr) * 1996-03-11 2004-07-28 Matsushita Electric Industrial Co., Ltd. Support optique d'enregistrement de donnees, procede de fabrication, et procede de reproduction/effacement d'un enregistrement
US6821707B2 (en) 1996-03-11 2004-11-23 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information
WO1998047142A1 (fr) * 1997-04-16 1998-10-22 Asahi Kasei Kogyo Kabushiki Kaisha Procede de production d'un support optique d'enregistrement d'informations et support optique d'enregistrement d'informations produit avec ce procede
US6503690B1 (en) 1997-08-12 2003-01-07 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, method for producing the same, and method for recording and reproducing optical information
JPH11134720A (ja) 1997-08-28 1999-05-21 Matsushita Electric Ind Co Ltd 光学的情報記録媒体及びその記録再生方法
US6343062B1 (en) 1997-09-26 2002-01-29 Matsushita Electric Industrial Co., Ltd Optical disk device and optical disk for recording and reproducing high-density signals
TW448443B (en) * 1998-08-05 2001-08-01 Matsushita Electric Ind Co Ltd Optical information storage media and production method as well as the storage reproducing method and device
US7260051B1 (en) 1998-12-18 2007-08-21 Nanochip, Inc. Molecular memory medium and molecular memory integrated circuit
TW484126B (en) * 1999-03-26 2002-04-21 Matsushita Electric Ind Co Ltd Manufacturing and recording regeneration method for information record medium
US6580683B1 (en) 1999-06-23 2003-06-17 Dataplay, Inc. Optical recording medium having a master data area and a writeable data area
US7227817B1 (en) 1999-12-07 2007-06-05 Dphi Acquisitions, Inc. Low profile optical head
US6631359B1 (en) 1999-09-10 2003-10-07 Dphi Acquisitions, Inc. Writeable medium access control using a medium writeable area
US7191153B1 (en) 1999-09-10 2007-03-13 Dphi Acquisitions, Inc. Content distribution method and apparatus
US6638820B2 (en) 2001-02-08 2003-10-28 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
US6727192B2 (en) 2001-03-01 2004-04-27 Micron Technology, Inc. Methods of metal doping a chalcogenide material
US6734455B2 (en) 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US7102150B2 (en) 2001-05-11 2006-09-05 Harshfield Steven T PCRAM memory cell and method of making same
US6951805B2 (en) * 2001-08-01 2005-10-04 Micron Technology, Inc. Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
US6737312B2 (en) 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6881623B2 (en) 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US6784018B2 (en) 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US6955940B2 (en) * 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US20030047765A1 (en) * 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
EP2112659A1 (fr) 2001-09-01 2009-10-28 Energy Convertion Devices, Inc. Stockage de données augmenté dans une mémoire optique et systèmes de récuperation faisant appel à des lasers bleus et/ou des lentilles a plasmons
US6815818B2 (en) 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US6791859B2 (en) 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
US6873538B2 (en) * 2001-12-20 2005-03-29 Micron Technology, Inc. Programmable conductor random access memory and a method for writing thereto
US6909656B2 (en) * 2002-01-04 2005-06-21 Micron Technology, Inc. PCRAM rewrite prevention
US20030143782A1 (en) * 2002-01-31 2003-07-31 Gilton Terry L. Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures
US6867064B2 (en) * 2002-02-15 2005-03-15 Micron Technology, Inc. Method to alter chalcogenide glass for improved switching characteristics
US6791885B2 (en) 2002-02-19 2004-09-14 Micron Technology, Inc. Programmable conductor random access memory and method for sensing same
US7151273B2 (en) 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US7087919B2 (en) 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US6891749B2 (en) * 2002-02-20 2005-05-10 Micron Technology, Inc. Resistance variable ‘on ’ memory
US6809362B2 (en) 2002-02-20 2004-10-26 Micron Technology, Inc. Multiple data state memory cell
US6937528B2 (en) 2002-03-05 2005-08-30 Micron Technology, Inc. Variable resistance memory and method for sensing same
US6849868B2 (en) 2002-03-14 2005-02-01 Micron Technology, Inc. Methods and apparatus for resistance variable material cells
US6855975B2 (en) 2002-04-10 2005-02-15 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
US6858482B2 (en) * 2002-04-10 2005-02-22 Micron Technology, Inc. Method of manufacture of programmable switching circuits and memory cells employing a glass layer
US6864500B2 (en) 2002-04-10 2005-03-08 Micron Technology, Inc. Programmable conductor memory cell structure
US6825135B2 (en) 2002-06-06 2004-11-30 Micron Technology, Inc. Elimination of dendrite formation during metal/chalcogenide glass deposition
US6890790B2 (en) 2002-06-06 2005-05-10 Micron Technology, Inc. Co-sputter deposition of metal-doped chalcogenides
US7015494B2 (en) * 2002-07-10 2006-03-21 Micron Technology, Inc. Assemblies displaying differential negative resistance
JP4027282B2 (ja) * 2002-07-10 2007-12-26 キヤノン株式会社 インクジェット記録ヘッド
US7209378B2 (en) 2002-08-08 2007-04-24 Micron Technology, Inc. Columnar 1T-N memory cell structure
US7018863B2 (en) 2002-08-22 2006-03-28 Micron Technology, Inc. Method of manufacture of a resistance variable memory cell
US6768666B2 (en) * 2002-08-23 2004-07-27 Energy Conversion Devices, Inc. Phase angle controlled stationary elements for wavefront engineering of electromagnetic radiation
US6856002B2 (en) * 2002-08-29 2005-02-15 Micron Technology, Inc. Graded GexSe100-x concentration in PCRAM
US20040040837A1 (en) * 2002-08-29 2004-03-04 Mcteer Allen Method of forming chalcogenide sputter target
US6867114B2 (en) 2002-08-29 2005-03-15 Micron Technology Inc. Methods to form a memory cell with metal-rich metal chalcogenide
US7364644B2 (en) 2002-08-29 2008-04-29 Micron Technology, Inc. Silver selenide film stoichiometry and morphology control in sputter deposition
US6831019B1 (en) 2002-08-29 2004-12-14 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
US7010644B2 (en) * 2002-08-29 2006-03-07 Micron Technology, Inc. Software refreshed memory device and method
US6864521B2 (en) * 2002-08-29 2005-03-08 Micron Technology, Inc. Method to control silver concentration in a resistance variable memory element
US6867996B2 (en) 2002-08-29 2005-03-15 Micron Technology, Inc. Single-polarity programmable resistance-variable memory element
US7163837B2 (en) 2002-08-29 2007-01-16 Micron Technology, Inc. Method of forming a resistance variable memory element
US7294527B2 (en) 2002-08-29 2007-11-13 Micron Technology Inc. Method of forming a memory cell
US6985377B2 (en) * 2002-10-15 2006-01-10 Nanochip, Inc. Phase change media for high density data storage
US7233517B2 (en) 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
AU2003282323A1 (en) 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Electric device comprising phase change material
US6813178B2 (en) 2003-03-12 2004-11-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
US7022579B2 (en) 2003-03-14 2006-04-04 Micron Technology, Inc. Method for filling via with metal
US7050327B2 (en) 2003-04-10 2006-05-23 Micron Technology, Inc. Differential negative resistance memory
US6930909B2 (en) * 2003-06-25 2005-08-16 Micron Technology, Inc. Memory device and methods of controlling resistance variation and resistance profile drift
US6961277B2 (en) 2003-07-08 2005-11-01 Micron Technology, Inc. Method of refreshing a PCRAM memory device
US7061004B2 (en) 2003-07-21 2006-06-13 Micron Technology, Inc. Resistance variable memory elements and methods of formation
US6903361B2 (en) 2003-09-17 2005-06-07 Micron Technology, Inc. Non-volatile memory structure
US7153721B2 (en) * 2004-01-28 2006-12-26 Micron Technology, Inc. Resistance variable memory elements based on polarized silver-selenide network growth
US7105864B2 (en) * 2004-01-29 2006-09-12 Micron Technology, Inc. Non-volatile zero field splitting resonance memory
US7098068B2 (en) 2004-03-10 2006-08-29 Micron Technology, Inc. Method of forming a chalcogenide material containing device
US7583551B2 (en) 2004-03-10 2009-09-01 Micron Technology, Inc. Power management control and controlling memory refresh operations
US20050232061A1 (en) 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
US7301887B2 (en) * 2004-04-16 2007-11-27 Nanochip, Inc. Methods for erasing bit cells in a high density data storage device
US7379412B2 (en) 2004-04-16 2008-05-27 Nanochip, Inc. Methods for writing and reading highly resolved domains for high density data storage
US7190048B2 (en) 2004-07-19 2007-03-13 Micron Technology, Inc. Resistance variable memory device and method of fabrication
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
US7354793B2 (en) 2004-08-12 2008-04-08 Micron Technology, Inc. Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
US7365411B2 (en) 2004-08-12 2008-04-29 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
US7151688B2 (en) 2004-09-01 2006-12-19 Micron Technology, Inc. Sensing of resistance variable memory devices
US7374174B2 (en) 2004-12-22 2008-05-20 Micron Technology, Inc. Small electrode for resistance variable devices
US7317200B2 (en) 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
US7709289B2 (en) 2005-04-22 2010-05-04 Micron Technology, Inc. Memory elements having patterned electrodes and method of forming the same
US7427770B2 (en) 2005-04-22 2008-09-23 Micron Technology, Inc. Memory array for increased bit density
US7269044B2 (en) 2005-04-22 2007-09-11 Micron Technology, Inc. Method and apparatus for accessing a memory array
US7269079B2 (en) 2005-05-16 2007-09-11 Micron Technology, Inc. Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
US7367119B2 (en) 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device
US7463573B2 (en) 2005-06-24 2008-12-09 Nanochip, Inc. Patterned media for a high density data storage device
US7233520B2 (en) 2005-07-08 2007-06-19 Micron Technology, Inc. Process for erasing chalcogenide variable resistance memory bits
US7309630B2 (en) * 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
US7274034B2 (en) 2005-08-01 2007-09-25 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7332735B2 (en) 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US7317567B2 (en) 2005-08-02 2008-01-08 Micron Technology, Inc. Method and apparatus for providing color changing thin film material
US7579615B2 (en) 2005-08-09 2009-08-25 Micron Technology, Inc. Access transistor for memory device
US7304368B2 (en) 2005-08-11 2007-12-04 Micron Technology, Inc. Chalcogenide-based electrokinetic memory element and method of forming the same
US7251154B2 (en) 2005-08-15 2007-07-31 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US7277313B2 (en) 2005-08-31 2007-10-02 Micron Technology, Inc. Resistance variable memory element with threshold device and method of forming the same
US7560723B2 (en) 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US8467236B2 (en) 2008-08-01 2013-06-18 Boise State University Continuously variable resistor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816108A (en) * 1971-12-22 1974-06-11 Nippon Telegraph & Telephone Semiconductor granules for use in acoustic-electro converting devices
CH622380A5 (fr) * 1977-12-21 1981-03-31 Bbc Brown Boveri & Cie
US4726858A (en) * 1983-08-24 1988-02-23 Hitachi, Ltd. Recording material
US4820394A (en) * 1984-11-21 1989-04-11 Energy Conversion Devices, Inc. Phase changeable material
US4653024A (en) * 1984-11-21 1987-03-24 Energy Conversion Devices, Inc. Data storage device including a phase changeable material
CN1008845B (zh) * 1984-12-05 1990-07-18 富士通株式会社 光学信息记录介质及信息的记录与擦抹的方法
US4744055A (en) * 1985-07-08 1988-05-10 Energy Conversion Devices, Inc. Erasure means and data storage system incorporating improved erasure means
CN1010519B (zh) * 1985-09-25 1990-11-21 松下电器产业株式会社 可逆的光学情报记录介质
JPS62183042A (ja) * 1986-02-06 1987-08-11 Toshiba Corp 情報記録再生方法
US4924436A (en) * 1987-06-22 1990-05-08 Energy Conversion Devices, Inc. Data storage device having a phase change memory medium reversible by direct overwrite and method of direct overwrite
EP0392179B1 (fr) * 1989-02-28 1995-11-08 Fuji Xerox Co., Ltd. Support d'enregistrement optique
DE69023786T2 (de) * 1989-03-17 1996-06-13 Fuji Xerox Co Ltd Optischer Aufzeichnungsträger.
US5166758A (en) * 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory

Also Published As

Publication number Publication date
DE69232844D1 (de) 2002-12-19
DE69232844T2 (de) 2003-09-04
KR100245901B1 (ko) 2000-03-02
EP0499273A2 (fr) 1992-08-19
EP0499273B1 (fr) 2002-11-13
US5128099A (en) 1992-07-07
EP0499273A3 (en) 1994-06-01
JPH04337532A (ja) 1992-11-25
ATE227878T1 (de) 2002-11-15
CA2061187C (fr) 1998-11-17
TW279903B (fr) 1996-07-01
EP0951011A1 (fr) 1999-10-20
KR920017045A (ko) 1992-09-26
JP2002046357A (ja) 2002-02-12

Similar Documents

Publication Publication Date Title
CA2061187A1 (fr) Materiau de memoire optique pouvant changer d'etat et dispositif utilisant ce materiau
CA2065456A1 (fr) Compositions de pentafluoroethane et de difluoromethane de type azeotrope
CA2137554A1 (fr) Tissu avec proprietes thermiques reversibles et ameliores
EP0612104A3 (fr) Semi-conducteurs composés et contrÔle de leur dopage.
CA2021580A1 (fr) Composition de liant topique a base de copolymere a polysiloxane greffe, avec un nouveau comonemere fluorochimique, et methode de revetement avec celui-ci
AU1642192A (en) Non-azeotropic refrigerant compositions comprising difluoromethane; 1,1,1-trifluoroethane; or propane
AU2145092A (en) Radial block copolymers, hot melt adhesive compositions, and articles produced therefrom
AU7018491A (en) Low loss 360 degree x-band analog phase shifter
AU2277992A (en) Controllably affecting fertilizer composition
AU7208194A (en) Coaxial thermoelements and thermocouples made from the coaxial thermoelements
FR2678943B1 (fr) Compositions utiles notamment comme materiaux a changement de phase pour le stockage et la restitution de l'energie.
AU8070394A (en) Heat generation through mechanical molecular agitation
AU7489091A (en) Enhanced cryopreservation with thermal hysteresis peptide
AU1846092A (en) Heat-transfer medium compositions
CA2066379A1 (fr) Photodetecteur thermique; procede de fabrication
AU2897092A (en) Storage stable hot melt adhesives
AU7851894A (en) Heat exchanger of the desk type
IT8819575A0 (it) Composizioni poliestere a rapida cristallizzazione.
AU3240293A (en) 3-hydryl-F-oxetane and 3,3-dihydryl-F-oxetane compounds useful as refrigerants or solvents
EP0604086A3 (fr) Compositions d'organopolysiloxane durcissables à température ambiante et ayant une stabilité de conservation excellente.
Bolesta et al. Phase transition and optical properties of thin films of Ag sub 2 CdI sub 4 superionics
Gaffett et al. Experimental Investigations of the Crystal to Amorphous Phase Transition Induced by Ball-Milling in Silicon and Si--Sn.(Retroactive Coverage)
West A Comparison of the Colonisation By Bacteria of Copper and Other Materials Commonly Used in Plumbing Systems With Special Reference to Legionella Pneumophila
Sevast'yanov Thermal Expansion of Mn sub 5 Ge sub 3 Single Crystals in the Range From 4. 2 to 800 K
Alekseev Influence of Amorphization on the Nature of the Spectral Distribution of Thermal Excitations in LaNi sub 5

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed