CA1248403A - Bilevel resist - Google Patents
Bilevel resistInfo
- Publication number
- CA1248403A CA1248403A CA000481475A CA481475A CA1248403A CA 1248403 A CA1248403 A CA 1248403A CA 000481475 A CA000481475 A CA 000481475A CA 481475 A CA481475 A CA 481475A CA 1248403 A CA1248403 A CA 1248403A
- Authority
- CA
- Canada
- Prior art keywords
- composition
- region
- resist
- radiation
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 238000012545 processing Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 26
- 229920000642 polymer Polymers 0.000 claims description 18
- 230000005855 radiation Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 11
- 239000003112 inhibitor Substances 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 claims description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 30
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 abstract description 12
- 229920003986 novolac Polymers 0.000 abstract description 7
- -1 silicon-substituted phenol Chemical class 0.000 abstract description 6
- 238000009833 condensation Methods 0.000 abstract description 5
- 230000005494 condensation Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 60
- 210000002381 plasma Anatomy 0.000 description 12
- 239000012153 distilled water Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 6
- ZZSAAXNTJKNMDX-UHFFFAOYSA-N 3-trimethylsilylphenol Chemical compound C[Si](C)(C)C1=CC=CC(O)=C1 ZZSAAXNTJKNMDX-UHFFFAOYSA-N 0.000 description 5
- 150000002989 phenols Chemical class 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 206010073306 Exposure to radiation Diseases 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000012223 aqueous fraction Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- MNOJRWOWILAHAV-UHFFFAOYSA-N 3-bromophenol Chemical compound OC1=CC=CC(Br)=C1 MNOJRWOWILAHAV-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- PJAOJOJIEFORFP-UHFFFAOYSA-N (3-bromophenoxy)-trimethylsilane Chemical compound C[Si](C)(C)OC1=CC=CC(Br)=C1 PJAOJOJIEFORFP-UHFFFAOYSA-N 0.000 description 1
- WOAHJDHKFWSLKE-UHFFFAOYSA-N 1,2-benzoquinone Chemical compound O=C1C=CC=CC1=O WOAHJDHKFWSLKE-UHFFFAOYSA-N 0.000 description 1
- DQFYMUKXVRYXPU-UHFFFAOYSA-N 4-(trimethylsilylmethyl)phenol Chemical compound C[Si](C)(C)CC1=CC=C(O)C=C1 DQFYMUKXVRYXPU-UHFFFAOYSA-N 0.000 description 1
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- 229920002160 Celluloid Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910007161 Si(CH3)3 Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- WBLIXGSTEMXDSM-UHFFFAOYSA-N chloromethane Chemical compound Cl[CH2] WBLIXGSTEMXDSM-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- QRBQRYSCIMREIR-UHFFFAOYSA-N trimethyl-(3-trimethylsilyloxyphenyl)silane Chemical compound C[Si](C)(C)OC1=CC=CC([Si](C)(C)C)=C1 QRBQRYSCIMREIR-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Chemical group 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/95—Multilayer mask including nonradiation sensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US613,884 | 1984-05-24 | ||
| US06/613,884 US4521274A (en) | 1984-05-24 | 1984-05-24 | Bilevel resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1248403A true CA1248403A (en) | 1989-01-10 |
Family
ID=24459054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000481475A Expired CA1248403A (en) | 1984-05-24 | 1985-05-14 | Bilevel resist |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4521274A (en, 2012) |
| EP (1) | EP0185030B1 (en, 2012) |
| JP (1) | JPS61502219A (en, 2012) |
| CA (1) | CA1248403A (en, 2012) |
| DE (1) | DE3566051D1 (en, 2012) |
| WO (1) | WO1985005470A1 (en, 2012) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4791046A (en) * | 1984-04-26 | 1988-12-13 | Oki Electric Industry Co., Ltd. | Process for forming mask patterns of positive type resist material with trimethylsilynitrile |
| US4892617A (en) * | 1984-08-22 | 1990-01-09 | American Telephone & Telegraph Company, At&T Bell Laboratories | Processes involving lithographic materials |
| US4981909A (en) * | 1985-03-19 | 1991-01-01 | International Business Machines Corporation | Plasma-resistant polymeric material, preparation thereof, and use thereof |
| US4782008A (en) * | 1985-03-19 | 1988-11-01 | International Business Machines Corporation | Plasma-resistant polymeric material, preparation thereof, and use thereof |
| US4690833A (en) * | 1986-03-28 | 1987-09-01 | International Business Machines Corporation | Providing circuit lines on a substrate |
| US4737425A (en) * | 1986-06-10 | 1988-04-12 | International Business Machines Corporation | Patterned resist and process |
| DE3760773D1 (en) * | 1986-07-25 | 1989-11-16 | Oki Electric Ind Co Ltd | Negative resist material, method for its manufacture and method for using it |
| JPH0772799B2 (ja) * | 1986-08-13 | 1995-08-02 | ソニー株式会社 | レジスト材料 |
| US4788127A (en) * | 1986-11-17 | 1988-11-29 | Eastman Kodak Company | Photoresist composition comprising an interpolymer of a silicon-containing monomer and an hydroxystyrene |
| US4931351A (en) * | 1987-01-12 | 1990-06-05 | Eastman Kodak Company | Bilayer lithographic process |
| DE3702035A1 (de) * | 1987-01-24 | 1988-08-04 | Basf Ag | Copolymerisate mit o-nitrocarbinolestergruppierungen und verfahren zur herstellung von zweilagenresisten sowie von halbleiterbauelementen |
| EP0285797A3 (de) * | 1987-03-11 | 1989-01-04 | Siemens Aktiengesellschaft | Verfahren zur Erzeugung von Resiststrukturen |
| DE3810247A1 (de) * | 1987-03-26 | 1988-10-06 | Toshiba Kawasaki Kk | Lichtempfindliche beschichtungsmasse |
| KR930000293B1 (ko) * | 1987-10-26 | 1993-01-15 | 마쯔시다덴기산교 가부시기가이샤 | 미세패턴형성방법 |
| DE3841571A1 (de) * | 1987-12-10 | 1989-06-29 | Toshiba Kawasaki Kk | Lichtempfindliche masse |
| US4935094A (en) * | 1989-05-26 | 1990-06-19 | At&T Bell Laboratories | Negative resist with oxygen plasma resistance |
| US5166038A (en) * | 1989-07-27 | 1992-11-24 | International Business Machines Corporation | Etch resistant pattern formation via interfacial silylation process |
| KR940005287B1 (ko) * | 1990-06-26 | 1994-06-15 | 후지쓰 가부시끼가이샤 | 수소가스를 사용하는 플라즈마 처리방법 |
| US5264076A (en) * | 1992-12-17 | 1993-11-23 | At&T Bell Laboratories | Integrated circuit process using a "hard mask" |
| US5326727A (en) * | 1992-12-30 | 1994-07-05 | At&T Bell Laboratories | Method for integrated circuit fabrication including linewidth control during etching |
| KR100447950B1 (ko) * | 2001-11-22 | 2004-09-08 | 한솔제지주식회사 | 포지티브형 포토레지스트 조성물 |
| US6844131B2 (en) | 2002-01-09 | 2005-01-18 | Clariant Finance (Bvi) Limited | Positive-working photoimageable bottom antireflective coating |
| US7070914B2 (en) * | 2002-01-09 | 2006-07-04 | Az Electronic Materials Usa Corp. | Process for producing an image using a first minimum bottom antireflective coating composition |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4426247A (en) * | 1982-04-12 | 1984-01-17 | Nippon Telegraph & Telephone Public Corporation | Method for forming micropattern |
| US4481049A (en) * | 1984-03-02 | 1984-11-06 | At&T Bell Laboratories | Bilevel resist |
-
1984
- 1984-05-24 US US06/613,884 patent/US4521274A/en not_active Expired - Lifetime
-
1985
- 1985-04-29 JP JP60502023A patent/JPS61502219A/ja active Granted
- 1985-04-29 DE DE8585902382T patent/DE3566051D1/de not_active Expired
- 1985-04-29 WO PCT/US1985/000787 patent/WO1985005470A1/en active IP Right Grant
- 1985-04-29 EP EP85902382A patent/EP0185030B1/en not_active Expired
- 1985-05-14 CA CA000481475A patent/CA1248403A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3566051D1 (en) | 1988-12-08 |
| WO1985005470A1 (en) | 1985-12-05 |
| EP0185030B1 (en) | 1988-11-02 |
| EP0185030A1 (en, 2012) | 1986-06-25 |
| JPH0584896B2 (en, 2012) | 1993-12-03 |
| US4521274A (en) | 1985-06-04 |
| JPS61502219A (ja) | 1986-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |