CA1241257A - Method of and apparatus for the drawing of bars of monocrystalline silicon - Google Patents
Method of and apparatus for the drawing of bars of monocrystalline siliconInfo
- Publication number
- CA1241257A CA1241257A CA000482045A CA482045A CA1241257A CA 1241257 A CA1241257 A CA 1241257A CA 000482045 A CA000482045 A CA 000482045A CA 482045 A CA482045 A CA 482045A CA 1241257 A CA1241257 A CA 1241257A
- Authority
- CA
- Canada
- Prior art keywords
- mass
- melt
- silicon
- crucible
- granules
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 23
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 50
- 239000010703 silicon Substances 0.000 claims abstract description 50
- 239000008187 granular material Substances 0.000 claims abstract description 28
- 238000002844 melting Methods 0.000 claims abstract description 15
- 230000008018 melting Effects 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 235000012431 wafers Nutrition 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 238000011109 contamination Methods 0.000 claims abstract description 4
- 239000010453 quartz Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000000155 melt Substances 0.000 abstract description 33
- 239000013078 crystal Substances 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- NHWNVPNZGGXQQV-UHFFFAOYSA-J [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O NHWNVPNZGGXQQV-UHFFFAOYSA-J 0.000 description 1
- 238000010621 bar drawing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US618,192 | 1984-06-07 | ||
| US06/618,192 US4575401A (en) | 1984-06-07 | 1984-06-07 | Method of and apparatus for the drawing of bars of monocrystalline silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1241257A true CA1241257A (en) | 1988-08-30 |
Family
ID=24476701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000482045A Expired CA1241257A (en) | 1984-06-07 | 1985-05-22 | Method of and apparatus for the drawing of bars of monocrystalline silicon |
Country Status (10)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0412083A (ja) * | 1990-04-27 | 1992-01-16 | Osaka Titanium Co Ltd | シリコン単結晶製造方法 |
| DE19638563C2 (de) * | 1996-09-20 | 1999-07-08 | Karlsruhe Forschzent | Verfahren zum Ziehen von Einkristallen |
| JP2885240B1 (ja) * | 1998-03-16 | 1999-04-19 | 日本電気株式会社 | 半導体結晶育成装置および育成方法 |
| ATE493525T1 (de) * | 2004-04-15 | 2011-01-15 | Faculdade De Ciencias Da Universidade De Lisboa | Verfahren und vorrichtung zum ziehen von halbleiter-, insbesondere silicium-, bändern |
| DE102007041803A1 (de) * | 2007-08-30 | 2009-03-05 | Pv Silicon Forschungs Und Produktions Gmbh | Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab |
| ES2449699T3 (es) | 2009-11-24 | 2014-03-20 | Forschungsverbund Berlin E.V. | Procedimiento y dispositivo para la fabricación de monocristales a partir de material semiconductor |
| US8920270B2 (en) | 2012-06-30 | 2014-12-30 | Easton Technical Products, Inc. | Arrow vane apparatus and method |
| CN112301426B (zh) * | 2019-08-02 | 2022-08-12 | 宁夏隆基硅材料有限公司 | 一种单晶硅棒的制造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB899287A (en) * | 1958-06-12 | 1962-06-20 | Standard Telephones Cables Ltd | Method and apparatus for heat treating fusible material |
| US3160497A (en) * | 1962-11-15 | 1964-12-08 | Loung Pai Yen | Method of melting refractory metals using a double heating process |
| DE1243641B (de) * | 1962-12-12 | 1967-07-06 | Siemens Ag | Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze |
| US4165361A (en) * | 1975-11-28 | 1979-08-21 | Milstein Joseph B | Process and apparatus for preparation of single crystals and textured polycrystals |
| US4116642A (en) * | 1976-12-15 | 1978-09-26 | Western Electric Company, Inc. | Method and apparatus for avoiding undesirable deposits in crystal growing operations |
| US4133969A (en) * | 1978-01-03 | 1979-01-09 | Zumbrunnen Allen D | High frequency resistance melting furnace |
-
1984
- 1984-06-07 US US06/618,192 patent/US4575401A/en not_active Expired - Fee Related
-
1985
- 1985-05-09 IL IL75150A patent/IL75150A/xx unknown
- 1985-05-14 SE SE8502375A patent/SE8502375L/xx not_active Application Discontinuation
- 1985-05-16 GB GB08512471A patent/GB2159728B/en not_active Expired
- 1985-05-22 CA CA000482045A patent/CA1241257A/en not_active Expired
- 1985-05-31 DE DE19853519632 patent/DE3519632A1/de not_active Withdrawn
- 1985-06-05 CH CH2379/85A patent/CH670456A5/de not_active IP Right Cessation
- 1985-06-06 IT IT21054/85A patent/IT1184580B/it active
- 1985-06-06 FR FR8508927A patent/FR2565604A1/fr active Pending
- 1985-06-06 JP JP60123462A patent/JPS6163595A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4575401A (en) | 1986-03-11 |
| GB2159728B (en) | 1987-09-16 |
| IT1184580B (it) | 1987-10-28 |
| DE3519632A1 (de) | 1986-01-02 |
| GB8512471D0 (en) | 1985-06-19 |
| IT8521054A0 (it) | 1985-06-06 |
| JPH0114169B2 (enrdf_load_stackoverflow) | 1989-03-09 |
| IL75150A (en) | 1988-07-31 |
| SE8502375L (sv) | 1985-12-08 |
| IL75150A0 (en) | 1985-09-29 |
| SE8502375D0 (sv) | 1985-05-14 |
| FR2565604A1 (fr) | 1985-12-13 |
| JPS6163595A (ja) | 1986-04-01 |
| CH670456A5 (enrdf_load_stackoverflow) | 1989-06-15 |
| GB2159728A (en) | 1985-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |