CA1212356A - Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus - Google Patents
Process gas introduction, confinement and evacuation system for glow discharge deposition apparatusInfo
- Publication number
- CA1212356A CA1212356A CA000439226A CA439226A CA1212356A CA 1212356 A CA1212356 A CA 1212356A CA 000439226 A CA000439226 A CA 000439226A CA 439226 A CA439226 A CA 439226A CA 1212356 A CA1212356 A CA 1212356A
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- cathode
- deposition
- process gases
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 84
- 230000008569 process Effects 0.000 title claims abstract description 81
- 239000007789 gas Substances 0.000 claims abstract description 117
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000004065 semiconductor Substances 0.000 claims abstract description 57
- 239000000463 material Substances 0.000 claims abstract description 37
- 238000000151 deposition Methods 0.000 claims description 100
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 230000006835 compression Effects 0.000 abstract description 7
- 238000007906 compression Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 40
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 230000005520 electrodynamics Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010924 continuous production Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229940014425 exodus Drugs 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002365 multiple layer Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45506—Turbulent flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Fluid Mechanics (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US437,075 | 1982-10-27 | ||
| US06/437,075 US4462333A (en) | 1982-10-27 | 1982-10-27 | Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1212356A true CA1212356A (en) | 1986-10-07 |
Family
ID=23734960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000439226A Expired CA1212356A (en) | 1982-10-27 | 1983-10-18 | Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4462333A (show.php) |
| EP (1) | EP0107510A3 (show.php) |
| JP (1) | JPH0642451B2 (show.php) |
| KR (1) | KR840006565A (show.php) |
| AU (1) | AU2061083A (show.php) |
| BR (1) | BR8305910A (show.php) |
| CA (1) | CA1212356A (show.php) |
| ES (1) | ES8407249A1 (show.php) |
| IN (1) | IN160670B (show.php) |
| MX (1) | MX159162A (show.php) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4513684A (en) * | 1982-12-22 | 1985-04-30 | Energy Conversion Devices, Inc. | Upstream cathode assembly |
| US4504526A (en) * | 1983-09-26 | 1985-03-12 | Libbey-Owens-Ford Company | Apparatus and method for producing a laminar flow of constant velocity fluid along a substrate |
| JPS60155676A (ja) * | 1984-01-24 | 1985-08-15 | Canon Inc | プラズマｃｖｄ装置 |
| DE3427057A1 (de) * | 1984-07-23 | 1986-01-23 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum |
| CN86104429A (zh) * | 1985-07-05 | 1987-01-07 | 西屋电气公司 | 溅射镀膜设备的靶中阴极和接地屏蔽极的配置 |
| DE4031770A1 (de) * | 1990-10-06 | 1992-04-09 | Leybold Ag | Vorrichtung zur vermeidung von staubbildung |
| US5224441A (en) * | 1991-09-27 | 1993-07-06 | The Boc Group, Inc. | Apparatus for rapid plasma treatments and method |
| GB2264957B (en) * | 1992-03-12 | 1995-09-20 | Bell Communications Res | Deflected flow in a chemical vapor deposition cell |
| US6066826A (en) * | 1998-03-16 | 2000-05-23 | Yializis; Angelo | Apparatus for plasma treatment of moving webs |
| JP4651072B2 (ja) | 2001-05-31 | 2011-03-16 | キヤノン株式会社 | 堆積膜形成方法、および堆積膜形成装置 |
| CA2553122A1 (en) * | 2004-09-14 | 2006-03-23 | Gen 3 Solar, Inc. | Plasma enhanced chemical vapor deposition apparatus and method |
| US20070048456A1 (en) * | 2004-09-14 | 2007-03-01 | Keshner Marvin S | Plasma enhanced chemical vapor deposition apparatus and method |
| US20060096536A1 (en) * | 2004-11-10 | 2006-05-11 | Daystar Technologies, Inc. | Pressure control system in a photovoltaic substrate deposition apparatus |
| JP2008520103A (ja) * | 2004-11-10 | 2008-06-12 | デイスター テクノロジーズ，インコーポレイティド | 連続プロセスを用いて薄膜太陽電池を形成するための方法及び装置 |
| US20080139003A1 (en) * | 2006-10-26 | 2008-06-12 | Shahid Pirzada | Barrier coating deposition for thin film devices using plasma enhanced chemical vapor deposition process |
| KR20140106753A (ko) * | 2012-01-16 | 2014-09-03 | 울박, 인크 | 성막 장치 |
| TWI551725B (zh) * | 2012-05-22 | 2016-10-01 | 隔板式沉積裝置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE760041A (fr) * | 1970-01-02 | 1971-05-17 | Ibm | Procede et appareil de transfert de masse gazeuse |
| US4033287A (en) * | 1976-01-22 | 1977-07-05 | Bell Telephone Laboratories, Incorporated | Radial flow reactor including glow discharge limiting shield |
| JPS5326442U (show.php) * | 1976-08-12 | 1978-03-06 | ||
| US4269137A (en) * | 1979-03-19 | 1981-05-26 | Xerox Corporation | Pretreatment of substrates prior to thin film deposition |
| US4262631A (en) * | 1979-10-01 | 1981-04-21 | Kubacki Ronald M | Thin film deposition apparatus using an RF glow discharge |
| JPS5675565A (en) * | 1979-11-20 | 1981-06-22 | Sumitomo Electric Ind Ltd | Manufacturing method of thin film |
| US4410558A (en) * | 1980-05-19 | 1983-10-18 | Energy Conversion Devices, Inc. | Continuous amorphous solar cell production system |
| EP0060651B1 (en) * | 1981-03-16 | 1986-07-30 | Energy Conversion Devices, Inc. | Apparatus including improved cathode for continuous deposition of amorphous material |
| US4369730A (en) * | 1981-03-16 | 1983-01-25 | Energy Conversion Devices, Inc. | Cathode for generating a plasma |
-
1982
- 1982-10-27 US US06/437,075 patent/US4462333A/en not_active Expired - Lifetime
-
1983
- 1983-10-18 CA CA000439226A patent/CA1212356A/en not_active Expired
- 1983-10-25 MX MX199201A patent/MX159162A/es unknown
- 1983-10-26 ES ES526769A patent/ES8407249A1/es not_active Expired
- 1983-10-26 AU AU20610/83A patent/AU2061083A/en not_active Abandoned
- 1983-10-26 BR BR8305910A patent/BR8305910A/pt unknown
- 1983-10-26 EP EP83306503A patent/EP0107510A3/en not_active Withdrawn
- 1983-10-26 JP JP58200712A patent/JPH0642451B2/ja not_active Expired - Lifetime
- 1983-10-27 KR KR1019830005094A patent/KR840006565A/ko not_active Withdrawn
- 1983-10-29 IN IN720/DEL/83A patent/IN160670B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US4462333A (en) | 1984-07-31 |
| IN160670B (show.php) | 1987-07-25 |
| BR8305910A (pt) | 1984-06-05 |
| JPS59121828A (ja) | 1984-07-14 |
| ES526769A0 (es) | 1984-08-16 |
| JPH0642451B2 (ja) | 1994-06-01 |
| EP0107510A2 (en) | 1984-05-02 |
| AU2061083A (en) | 1984-05-03 |
| KR840006565A (ko) | 1984-11-30 |
| ES8407249A1 (es) | 1984-08-16 |
| EP0107510A3 (en) | 1986-01-29 |
| MX159162A (es) | 1989-04-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |