CA1186072A - Transistors semiconducteurs a oxyde de metal pour hautes tensions - Google Patents

Transistors semiconducteurs a oxyde de metal pour hautes tensions

Info

Publication number
CA1186072A
CA1186072A CA000421886A CA421886A CA1186072A CA 1186072 A CA1186072 A CA 1186072A CA 000421886 A CA000421886 A CA 000421886A CA 421886 A CA421886 A CA 421886A CA 1186072 A CA1186072 A CA 1186072A
Authority
CA
Canada
Prior art keywords
oxide
drain
gate
source
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000421886A
Other languages
English (en)
Inventor
Robert A. Hadaway
Joseph P. Ellul
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Priority to CA000421886A priority Critical patent/CA1186072A/fr
Application granted granted Critical
Publication of CA1186072A publication Critical patent/CA1186072A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CA000421886A 1983-02-17 1983-02-17 Transistors semiconducteurs a oxyde de metal pour hautes tensions Expired CA1186072A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA000421886A CA1186072A (fr) 1983-02-17 1983-02-17 Transistors semiconducteurs a oxyde de metal pour hautes tensions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000421886A CA1186072A (fr) 1983-02-17 1983-02-17 Transistors semiconducteurs a oxyde de metal pour hautes tensions

Publications (1)

Publication Number Publication Date
CA1186072A true CA1186072A (fr) 1985-04-23

Family

ID=4124588

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000421886A Expired CA1186072A (fr) 1983-02-17 1983-02-17 Transistors semiconducteurs a oxyde de metal pour hautes tensions

Country Status (1)

Country Link
CA (1) CA1186072A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0487022A2 (fr) * 1990-11-23 1992-05-27 Texas Instruments Incorporated Procédé de fabrication simultané d'un transistor à effet de champ à grille isolée et d'un transistor bipolaire
EP0504992A2 (fr) * 1991-03-22 1992-09-23 Philips Electronics Uk Limited Dispositif semi-conducteur à effet de champ de type latéral à grille isolée
EP2131399A3 (fr) * 2008-05-23 2009-12-30 NEC Electronics Corporation Dispositif semi-conducteur à grille isolée et son procédé de fabrication

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0487022A2 (fr) * 1990-11-23 1992-05-27 Texas Instruments Incorporated Procédé de fabrication simultané d'un transistor à effet de champ à grille isolée et d'un transistor bipolaire
US5275961A (en) * 1990-11-23 1994-01-04 Texas Instruments Incorporated Method of forming insulated gate field-effect transistors
EP0487022B1 (fr) * 1990-11-23 1997-04-23 Texas Instruments Incorporated Procédé de fabrication simultané d'un transistor à effet de champ à grille isolée et d'un transistor bipolaire
EP0504992A2 (fr) * 1991-03-22 1992-09-23 Philips Electronics Uk Limited Dispositif semi-conducteur à effet de champ de type latéral à grille isolée
EP0504992A3 (en) * 1991-03-22 1993-06-16 Philips Electronics Uk Limited A lateral insulated gate field effect semiconductor device
EP2131399A3 (fr) * 2008-05-23 2009-12-30 NEC Electronics Corporation Dispositif semi-conducteur à grille isolée et son procédé de fabrication

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Legal Events

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MKEX Expiry