CA1167963A - Circuit senseur pour cellule de memoire morte multi-bit - Google Patents

Circuit senseur pour cellule de memoire morte multi-bit

Info

Publication number
CA1167963A
CA1167963A CA000393116A CA393116A CA1167963A CA 1167963 A CA1167963 A CA 1167963A CA 000393116 A CA000393116 A CA 000393116A CA 393116 A CA393116 A CA 393116A CA 1167963 A CA1167963 A CA 1167963A
Authority
CA
Canada
Prior art keywords
transistor means
memory
voltage
storage
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000393116A
Other languages
English (en)
Inventor
Ching-Lin Jiang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CTU of Delaware Inc
Original Assignee
Mostek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mostek Corp filed Critical Mostek Corp
Application granted granted Critical
Publication of CA1167963A publication Critical patent/CA1167963A/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
CA000393116A 1980-12-24 1981-12-23 Circuit senseur pour cellule de memoire morte multi-bit Expired CA1167963A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26599380A 1980-12-24 1980-12-24
US265,993 1980-12-24

Publications (1)

Publication Number Publication Date
CA1167963A true CA1167963A (fr) 1984-05-22

Family

ID=23012721

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000393116A Expired CA1167963A (fr) 1980-12-24 1981-12-23 Circuit senseur pour cellule de memoire morte multi-bit

Country Status (2)

Country Link
CA (1) CA1167963A (fr)
FR (1) FR2496956A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3179943B2 (ja) * 1993-07-12 2001-06-25 株式会社東芝 半導体記憶装置
US5546068A (en) * 1994-12-22 1996-08-13 At&T Corp. Sense amplifier

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144232A (en) * 1977-04-28 1978-12-15 Toshiba Corp Sensor circuit for multi-value signal charge transfer device
US4202044A (en) * 1978-06-13 1980-05-06 International Business Machines Corporation Quaternary FET read only memory
US4192014A (en) * 1978-11-20 1980-03-04 Ncr Corporation ROM memory cell with 2n FET channel widths

Also Published As

Publication number Publication date
FR2496956A1 (fr) 1982-06-25

Similar Documents

Publication Publication Date Title
US6982918B2 (en) Data storage device and refreshing method for use with such device
EP0273639B1 (fr) Mémoire semi-conductrice à structure de mémorisation à niveaux multiples
US5650656A (en) Semiconductor memory device capable of storing plural-bit data in a single memory cell
US20050162894A1 (en) Semiconductor integrated circuit device
US4493056A (en) RAM Utilizing offset contact regions for increased storage capacitance
US4086662A (en) Memory system with read/write control lines
WO1980001119A1 (fr) Cellule de memoire rom avec 2n largeurs de canaux tec
US6711088B2 (en) Semiconductor memory device
US5712823A (en) Flexible dram array
US5184324A (en) Dynamic semiconductor multi-value memory device
US4679172A (en) Dynamic memory with increased data retention time
US5598365A (en) High-density read-only memory
JP2573380B2 (ja) 不揮発性半導体メモリ
US4520466A (en) Dynamic random access memory
EP0040045B1 (fr) Dispositif de mémoire morte
US4602355A (en) Memory circuit with noise preventing means for word lines
EP1492126A1 (fr) Mémoire DRAM analogique ou à multi-niveau comprenant un transistor du typ naturel
US5663903A (en) Flat-cell read-only memory
US4404654A (en) Semiconductor device system
CA1167963A (fr) Circuit senseur pour cellule de memoire morte multi-bit
JPH0369092A (ja) ダイナミックｒａｍ用メモリセル回路
JP3843486B2 (ja) 不揮発性半導体記憶装置
US7110279B2 (en) Memory
WO1982002276A1 (fr) Circuit de detection de cellules de memoire mortes multi-bits
JPS61267992A (ja) ランダムアクセスメモリ

Legal Events

Date Code Title Description
MKEX Expiry