CA1163728A - Thyristor having controllable emitter short circuits and a method for its operation - Google Patents
Thyristor having controllable emitter short circuits and a method for its operationInfo
- Publication number
- CA1163728A CA1163728A CA000377463A CA377463A CA1163728A CA 1163728 A CA1163728 A CA 1163728A CA 000377463 A CA000377463 A CA 000377463A CA 377463 A CA377463 A CA 377463A CA 1163728 A CA1163728 A CA 1163728A
- Authority
- CA
- Canada
- Prior art keywords
- emitter
- base
- thyristor
- electrode
- boundary surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 239000012799 electrically-conductive coating Substances 0.000 abstract 1
- 230000001960 triggered effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000013641 positive control Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19803018468 DE3018468A1 (de) | 1980-05-14 | 1980-05-14 | Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb |
| DEP3018468.0 | 1980-05-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1163728A true CA1163728A (en) | 1984-03-13 |
Family
ID=6102425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000377463A Expired CA1163728A (en) | 1980-05-14 | 1981-05-13 | Thyristor having controllable emitter short circuits and a method for its operation |
Country Status (5)
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3118291A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Triac und verfahren zu seinem betrieb |
| US5111268A (en) * | 1981-12-16 | 1992-05-05 | General Electric Company | Semiconductor device with improved turn-off capability |
| IE56341B1 (en) * | 1981-12-16 | 1991-07-03 | Gen Electric | Multicellular thyristor |
| DE3200660A1 (de) * | 1982-01-12 | 1983-07-21 | Siemens AG, 1000 Berlin und 8000 München | Mis-feldeffekttransistor mit ladungstraegerinjektion |
| DE3224618A1 (de) * | 1982-07-01 | 1984-01-05 | Siemens AG, 1000 Berlin und 8000 München | Igfet mit ladungstraegerinjektion |
| DE3230760A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Abschaltbarer thyristor |
| DE3330022A1 (de) * | 1983-08-19 | 1985-02-28 | Siemens AG, 1000 Berlin und 8000 München | Thyristor |
| JPS60150670A (ja) * | 1984-01-17 | 1985-08-08 | Mitsubishi Electric Corp | 半導体装置 |
| FR2584237B1 (fr) * | 1985-06-28 | 1987-08-07 | Telemecanique Electrique | Dispositif integre mos-bipolaire normalement passant |
| US4760432A (en) * | 1985-11-04 | 1988-07-26 | Siemens Aktiengesellschaft | Thyristor having controllable emitter-base shorts |
| US4717940A (en) * | 1986-03-11 | 1988-01-05 | Kabushiki Kaisha Toshiba | MIS controlled gate turn-off thyristor |
| JPS6335400U (US07943777-20110517-C00090.png) * | 1986-08-26 | 1988-03-07 | ||
| EP0332822A1 (de) * | 1988-02-22 | 1989-09-20 | Asea Brown Boveri Ag | Feldeffektgesteuertes, bipolares Leistungshalbleiter-Bauelement sowie Verfahren zu seiner Herstellung |
| JPH0247874A (ja) * | 1988-08-10 | 1990-02-16 | Fuji Electric Co Ltd | Ｍｏｓ型半導体装置の製造方法 |
| SE463235B (sv) * | 1989-02-23 | 1990-10-22 | Asea Brown Boveri | Mos-faelteffekttransistorstyrd tyristor |
| WO1993022798A1 (en) * | 1992-04-29 | 1993-11-11 | North Carolina State University | Base resistance controlled mos gated thyristor with improved turn-off characteristics |
| JP2796470B2 (ja) * | 1992-05-06 | 1998-09-10 | 三菱電機株式会社 | 自己消弧型サイリスタおよびその製造方法 |
| JP5446103B2 (ja) * | 2008-03-07 | 2014-03-19 | サンケン電気株式会社 | 双方向サイリスタ |
| US8739010B2 (en) * | 2010-11-19 | 2014-05-27 | Altera Corporation | Memory array with redundant bits and memory element voting circuits |
| CN112563325B (zh) * | 2020-12-14 | 2022-05-13 | 电子科技大学 | 一种mos栅控晶闸管及其制造方法 |
| CN112563326B (zh) * | 2020-12-14 | 2022-05-17 | 电子科技大学 | 一种具有寄生二极管的mos栅控晶闸管及其制造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2133430A1 (de) * | 1971-07-05 | 1973-01-18 | Siemens Ag | Planar-vierschichtdiode |
| JPS5629458B2 (US07943777-20110517-C00090.png) * | 1973-07-02 | 1981-07-08 | ||
| SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
| JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
| DE2945366A1 (de) * | 1979-11-09 | 1981-05-14 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitter-kurzschluessen |
| DE2945347A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb |
| DE2945324A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten |
-
1980
- 1980-05-14 DE DE19803018468 patent/DE3018468A1/de active Granted
-
1981
- 1981-04-09 US US06/252,356 patent/US4454527A/en not_active Expired - Fee Related
- 1981-05-11 EP EP81103603A patent/EP0039943B1/de not_active Expired
- 1981-05-13 CA CA000377463A patent/CA1163728A/en not_active Expired
- 1981-05-13 JP JP7209081A patent/JPS577160A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3018468C2 (US07943777-20110517-C00090.png) | 1989-05-18 |
| EP0039943A1 (de) | 1981-11-18 |
| JPS577160A (en) | 1982-01-14 |
| JPS6150392B2 (US07943777-20110517-C00090.png) | 1986-11-04 |
| DE3018468A1 (de) | 1981-11-19 |
| EP0039943B1 (de) | 1983-06-22 |
| US4454527A (en) | 1984-06-12 |
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| Publication | Publication Date | Title |
|---|---|---|
| CA1163728A (en) | Thyristor having controllable emitter short circuits and a method for its operation | |
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| JPH0126549B2 (US07943777-20110517-C00090.png) | ||
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |