CA1155238A - High resolution two-layer resists - Google Patents
High resolution two-layer resistsInfo
- Publication number
- CA1155238A CA1155238A CA000363463A CA363463A CA1155238A CA 1155238 A CA1155238 A CA 1155238A CA 000363463 A CA000363463 A CA 000363463A CA 363463 A CA363463 A CA 363463A CA 1155238 A CA1155238 A CA 1155238A
- Authority
- CA
- Canada
- Prior art keywords
- resist material
- resist
- thickness
- layer
- lower layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims abstract description 94
- 230000035945 sensitivity Effects 0.000 claims abstract description 27
- 239000002131 composite material Substances 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 230000002411 adverse Effects 0.000 claims abstract description 5
- 230000000694 effects Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 39
- 238000011161 development Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 16
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 16
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 8
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 4
- 229920001577 copolymer Polymers 0.000 claims description 4
- 230000003116 impacting effect Effects 0.000 claims description 2
- 229920003145 methacrylic acid copolymer Polymers 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 38
- 239000000203 mixture Substances 0.000 description 18
- 238000010894 electron beam technology Methods 0.000 description 12
- 238000001704 evaporation Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 8
- 238000009987 spinning Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 101100379067 Caenorhabditis elegans anc-1 gene Proteins 0.000 description 1
- 241001663154 Electron Species 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000013527 degreasing agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- VOOLKNUJNPZAHE-UHFFFAOYSA-N formaldehyde;2-methylphenol Chemical compound O=C.CC1=CC=CC=C1O VOOLKNUJNPZAHE-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000013047 polymeric layer Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012453 solvate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9780979A | 1979-11-27 | 1979-11-27 | |
| US097,809 | 1979-11-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1155238A true CA1155238A (en) | 1983-10-11 |
Family
ID=22265225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000363463A Expired CA1155238A (en) | 1979-11-27 | 1980-10-29 | High resolution two-layer resists |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5691428A (enExample) |
| CA (1) | CA1155238A (enExample) |
| DE (1) | DE3044434A1 (enExample) |
| FR (1) | FR2470402B1 (enExample) |
| GB (1) | GB2064152B (enExample) |
| NL (1) | NL8006438A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3131031A1 (de) * | 1981-08-05 | 1983-02-24 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum erzeugen der felddotierung beim herstellen von integrierten komplementaeren mos-feldeffekttransistoren |
| US5139922A (en) * | 1987-04-10 | 1992-08-18 | Matsushita Electronics Corporation | Method of making resist pattern |
| DE102006050363B4 (de) | 2006-10-25 | 2018-08-16 | Advanced Mask Technology Center Gmbh & Co. Kg | Verfahren zur Herstellung einer Fotomaske, Verfahren zur Strukturierung einer Schicht oder eines Schichtstapels und Resiststapel auf einem Maskensubstrat |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1622302A1 (de) * | 1968-02-01 | 1970-10-29 | Telefunken Patent | Verfahren zum photographischen UEbertragen von Strukturen auf Halbleiterkoerper |
| US3934057A (en) * | 1973-12-19 | 1976-01-20 | International Business Machines Corporation | High sensitivity positive resist layers and mask formation process |
| JPS51129190A (en) * | 1975-05-02 | 1976-11-10 | Fujitsu Ltd | Manufacturing method of semiconductor |
| US4024293A (en) * | 1975-12-10 | 1977-05-17 | International Business Machines Corporation | High sensitivity resist system for lift-off metallization |
| JPS5387668A (en) * | 1977-01-13 | 1978-08-02 | Toshiba Corp | Forming method of patterns |
| US4211834A (en) * | 1977-12-30 | 1980-07-08 | International Business Machines Corporation | Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask |
-
1980
- 1980-10-29 CA CA000363463A patent/CA1155238A/en not_active Expired
- 1980-11-24 GB GB8037599A patent/GB2064152B/en not_active Expired
- 1980-11-24 FR FR8024884A patent/FR2470402B1/fr not_active Expired
- 1980-11-26 NL NL8006438A patent/NL8006438A/nl unknown
- 1980-11-26 DE DE19803044434 patent/DE3044434A1/de not_active Ceased
- 1980-11-27 JP JP16596980A patent/JPS5691428A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2470402A1 (fr) | 1981-05-29 |
| JPH0468769B2 (enExample) | 1992-11-04 |
| GB2064152A (en) | 1981-06-10 |
| NL8006438A (nl) | 1981-07-01 |
| DE3044434A1 (de) | 1981-08-27 |
| GB2064152B (en) | 1984-02-08 |
| JPS5691428A (en) | 1981-07-24 |
| FR2470402B1 (fr) | 1987-03-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |