CA1155238A - Resists a deux couches a grande resolution - Google Patents
Resists a deux couches a grande resolutionInfo
- Publication number
- CA1155238A CA1155238A CA000363463A CA363463A CA1155238A CA 1155238 A CA1155238 A CA 1155238A CA 000363463 A CA000363463 A CA 000363463A CA 363463 A CA363463 A CA 363463A CA 1155238 A CA1155238 A CA 1155238A
- Authority
- CA
- Canada
- Prior art keywords
- resist material
- resist
- thickness
- layer
- lower layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9780979A | 1979-11-27 | 1979-11-27 | |
US097,809 | 1979-11-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1155238A true CA1155238A (fr) | 1983-10-11 |
Family
ID=22265225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000363463A Expired CA1155238A (fr) | 1979-11-27 | 1980-10-29 | Resists a deux couches a grande resolution |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5691428A (fr) |
CA (1) | CA1155238A (fr) |
DE (1) | DE3044434A1 (fr) |
FR (1) | FR2470402B1 (fr) |
GB (1) | GB2064152B (fr) |
NL (1) | NL8006438A (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3131031A1 (de) * | 1981-08-05 | 1983-02-24 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum erzeugen der felddotierung beim herstellen von integrierten komplementaeren mos-feldeffekttransistoren |
US5139922A (en) * | 1987-04-10 | 1992-08-18 | Matsushita Electronics Corporation | Method of making resist pattern |
DE102006050363B4 (de) | 2006-10-25 | 2018-08-16 | Advanced Mask Technology Center Gmbh & Co. Kg | Verfahren zur Herstellung einer Fotomaske, Verfahren zur Strukturierung einer Schicht oder eines Schichtstapels und Resiststapel auf einem Maskensubstrat |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1622302A1 (de) * | 1968-02-01 | 1970-10-29 | Telefunken Patent | Verfahren zum photographischen UEbertragen von Strukturen auf Halbleiterkoerper |
US3934057A (en) * | 1973-12-19 | 1976-01-20 | International Business Machines Corporation | High sensitivity positive resist layers and mask formation process |
JPS51129190A (en) * | 1975-05-02 | 1976-11-10 | Fujitsu Ltd | Manufacturing method of semiconductor |
US4024293A (en) * | 1975-12-10 | 1977-05-17 | International Business Machines Corporation | High sensitivity resist system for lift-off metallization |
JPS5387668A (en) * | 1977-01-13 | 1978-08-02 | Toshiba Corp | Forming method of patterns |
US4211834A (en) * | 1977-12-30 | 1980-07-08 | International Business Machines Corporation | Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask |
-
1980
- 1980-10-29 CA CA000363463A patent/CA1155238A/fr not_active Expired
- 1980-11-24 GB GB8037599A patent/GB2064152B/en not_active Expired
- 1980-11-24 FR FR8024884A patent/FR2470402B1/fr not_active Expired
- 1980-11-26 NL NL8006438A patent/NL8006438A/nl unknown
- 1980-11-26 DE DE19803044434 patent/DE3044434A1/de not_active Ceased
- 1980-11-27 JP JP16596980A patent/JPS5691428A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2470402B1 (fr) | 1987-03-20 |
GB2064152A (en) | 1981-06-10 |
GB2064152B (en) | 1984-02-08 |
NL8006438A (nl) | 1981-07-01 |
JPH0468769B2 (fr) | 1992-11-04 |
FR2470402A1 (fr) | 1981-05-29 |
DE3044434A1 (de) | 1981-08-27 |
JPS5691428A (en) | 1981-07-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |