CA1154172A - Semiconductor switching device - Google Patents
Semiconductor switching deviceInfo
- Publication number
- CA1154172A CA1154172A CA000370458A CA370458A CA1154172A CA 1154172 A CA1154172 A CA 1154172A CA 000370458 A CA000370458 A CA 000370458A CA 370458 A CA370458 A CA 370458A CA 1154172 A CA1154172 A CA 1154172A
- Authority
- CA
- Canada
- Prior art keywords
- region
- transistor
- switching device
- base
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 230000003321 amplification Effects 0.000 claims abstract description 11
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 11
- 239000012535 impurity Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 238000005304 joining Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ODPOAESBSUKMHD-UHFFFAOYSA-L 6,7-dihydrodipyrido[1,2-b:1',2'-e]pyrazine-5,8-diium;dibromide Chemical compound [Br-].[Br-].C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 ODPOAESBSUKMHD-UHFFFAOYSA-L 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- 241000557609 Cissa Species 0.000 description 1
- 102000004726 Connectin Human genes 0.000 description 1
- 108010002947 Connectin Proteins 0.000 description 1
- 239000005630 Diquat Substances 0.000 description 1
- 241001050985 Disco Species 0.000 description 1
- 241000592503 Speea Species 0.000 description 1
- 241000193803 Therea Species 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04126—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1615280A JPS56112751A (en) | 1980-02-13 | 1980-02-13 | Switching element |
JPP55-16152 | 1980-02-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1154172A true CA1154172A (en) | 1983-09-20 |
Family
ID=11908523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000370458A Expired CA1154172A (en) | 1980-02-13 | 1981-02-10 | Semiconductor switching device |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS56112751A (de) |
CA (1) | CA1154172A (de) |
DE (1) | DE3104743C2 (de) |
GB (1) | GB2069787B (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56126959A (en) * | 1980-03-12 | 1981-10-05 | Nec Corp | Semiconductor device |
JPS62198148A (ja) * | 1986-02-25 | 1987-09-01 | Sanyo Electric Co Ltd | 半導体装置 |
DE3631957A1 (de) * | 1986-09-19 | 1988-03-31 | Siemens Ag | Schaltungsanordnung zum ausschalten von transistoren in darlington-schaltung |
GB9127476D0 (en) * | 1991-12-30 | 1992-02-19 | Texas Instruments Ltd | A semiconductor integrated circuit |
JPH05243259A (ja) * | 1992-03-03 | 1993-09-21 | Mitsubishi Electric Corp | バイポーラトランジスタ及びその製造方法並びにダーリントントランジスタ及びその製造方法 |
-
1980
- 1980-02-13 JP JP1615280A patent/JPS56112751A/ja active Granted
-
1981
- 1981-02-03 GB GB8103251A patent/GB2069787B/en not_active Expired
- 1981-02-10 CA CA000370458A patent/CA1154172A/en not_active Expired
- 1981-02-11 DE DE19813104743 patent/DE3104743C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE3104743A1 (de) | 1982-01-07 |
JPS625346B2 (de) | 1987-02-04 |
DE3104743C2 (de) | 1983-12-22 |
GB2069787A (en) | 1981-08-26 |
JPS56112751A (en) | 1981-09-05 |
GB2069787B (en) | 1985-01-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |