CA1154172A - Semiconductor switching device - Google Patents

Semiconductor switching device

Info

Publication number
CA1154172A
CA1154172A CA000370458A CA370458A CA1154172A CA 1154172 A CA1154172 A CA 1154172A CA 000370458 A CA000370458 A CA 000370458A CA 370458 A CA370458 A CA 370458A CA 1154172 A CA1154172 A CA 1154172A
Authority
CA
Canada
Prior art keywords
region
transistor
switching device
base
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000370458A
Other languages
English (en)
French (fr)
Inventor
Susumi Iesaka
Masami Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Application granted granted Critical
Publication of CA1154172A publication Critical patent/CA1154172A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04126Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CA000370458A 1980-02-13 1981-02-10 Semiconductor switching device Expired CA1154172A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1615280A JPS56112751A (en) 1980-02-13 1980-02-13 Switching element
JPP55-16152 1980-02-13

Publications (1)

Publication Number Publication Date
CA1154172A true CA1154172A (en) 1983-09-20

Family

ID=11908523

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000370458A Expired CA1154172A (en) 1980-02-13 1981-02-10 Semiconductor switching device

Country Status (4)

Country Link
JP (1) JPS56112751A (de)
CA (1) CA1154172A (de)
DE (1) DE3104743C2 (de)
GB (1) GB2069787B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126959A (en) * 1980-03-12 1981-10-05 Nec Corp Semiconductor device
JPS62198148A (ja) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd 半導体装置
DE3631957A1 (de) * 1986-09-19 1988-03-31 Siemens Ag Schaltungsanordnung zum ausschalten von transistoren in darlington-schaltung
GB9127476D0 (en) * 1991-12-30 1992-02-19 Texas Instruments Ltd A semiconductor integrated circuit
JPH05243259A (ja) * 1992-03-03 1993-09-21 Mitsubishi Electric Corp バイポーラトランジスタ及びその製造方法並びにダーリントントランジスタ及びその製造方法

Also Published As

Publication number Publication date
DE3104743A1 (de) 1982-01-07
JPS625346B2 (de) 1987-02-04
DE3104743C2 (de) 1983-12-22
GB2069787A (en) 1981-08-26
JPS56112751A (en) 1981-09-05
GB2069787B (en) 1985-01-03

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Legal Events

Date Code Title Description
MKEX Expiry