CA1132832A - Use of an oxygen-containing plasma to develop a phenol-formaldehyde/diazoketone resist reacted with magnesium ions - Google Patents
Use of an oxygen-containing plasma to develop a phenol-formaldehyde/diazoketone resist reacted with magnesium ionsInfo
- Publication number
- CA1132832A CA1132832A CA371,001A CA371001A CA1132832A CA 1132832 A CA1132832 A CA 1132832A CA 371001 A CA371001 A CA 371001A CA 1132832 A CA1132832 A CA 1132832A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- resist
- oxygen
- magnesium
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 14
- 239000001301 oxygen Substances 0.000 title claims abstract description 14
- 229920001568 phenolic resin Polymers 0.000 title claims abstract description 7
- XXTZHYXQVWRADW-UHFFFAOYSA-N diazomethanone Chemical compound [N]N=C=O XXTZHYXQVWRADW-UHFFFAOYSA-N 0.000 title claims abstract description 6
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 title claims abstract description 5
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 title claims description 9
- 229910001425 magnesium ion Inorganic materials 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 30
- 159000000003 magnesium salts Chemical class 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 230000002378 acidificating effect Effects 0.000 claims description 2
- 229940097364 magnesium acetate tetrahydrate Drugs 0.000 claims description 2
- XKPKPGCRSHFTKM-UHFFFAOYSA-L magnesium;diacetate;tetrahydrate Chemical group O.O.O.O.[Mg+2].CC([O-])=O.CC([O-])=O XKPKPGCRSHFTKM-UHFFFAOYSA-L 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 1
- 229920005989 resin Polymers 0.000 abstract description 8
- 239000011347 resin Substances 0.000 abstract description 8
- 229920003986 novolac Polymers 0.000 abstract description 4
- 238000006114 decarboxylation reaction Methods 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 229940077744 antacid containing magnesium compound Drugs 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- -1 diazo ketones Chemical class 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 235000001055 magnesium Nutrition 0.000 description 4
- 150000002681 magnesium compounds Chemical class 0.000 description 4
- 229940091250 magnesium supplement Drugs 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 206010073306 Exposure to radiation Diseases 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000000732 arylene group Chemical group 0.000 description 2
- 230000005495 cold plasma Effects 0.000 description 2
- 239000000306 component Substances 0.000 description 2
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 description 2
- 229940069446 magnesium acetate Drugs 0.000 description 2
- 239000011654 magnesium acetate Substances 0.000 description 2
- 235000011285 magnesium acetate Nutrition 0.000 description 2
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003791 organic solvent mixture Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- DEQUKPCANKRTPZ-UHFFFAOYSA-N (2,3-dihydroxyphenyl)-phenylmethanone Chemical compound OC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1O DEQUKPCANKRTPZ-UHFFFAOYSA-N 0.000 description 1
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000004104 aryloxy group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229960004279 formaldehyde Drugs 0.000 description 1
- 235000019256 formaldehyde Nutrition 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- PJJZFXPJNUVBMR-UHFFFAOYSA-L magnesium benzoate Chemical compound [Mg+2].[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 PJJZFXPJNUVBMR-UHFFFAOYSA-L 0.000 description 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 description 1
- 229910001623 magnesium bromide Inorganic materials 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- BLQJIBCZHWBKSL-UHFFFAOYSA-L magnesium iodide Chemical compound [Mg+2].[I-].[I-] BLQJIBCZHWBKSL-UHFFFAOYSA-L 0.000 description 1
- 229910001641 magnesium iodide Inorganic materials 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- RNUHOKZSYYKPPI-UHFFFAOYSA-L magnesium;dibromate Chemical compound [Mg+2].[O-]Br(=O)=O.[O-]Br(=O)=O RNUHOKZSYYKPPI-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US145,163 | 1980-04-30 | ||
| US06/145,163 US4307178A (en) | 1980-04-30 | 1980-04-30 | Plasma develoment of resists |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1132832A true CA1132832A (en) | 1982-10-05 |
Family
ID=22511878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA371,001A Expired CA1132832A (en) | 1980-04-30 | 1981-02-16 | Use of an oxygen-containing plasma to develop a phenol-formaldehyde/diazoketone resist reacted with magnesium ions |
Country Status (5)
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56162744A (en) * | 1980-05-19 | 1981-12-14 | Hitachi Ltd | Formation of fine pattern |
| US4396704A (en) * | 1981-04-22 | 1983-08-02 | Bell Telephone Laboratories, Incorporated | Solid state devices produced by organometallic plasma developed resists |
| US4500628A (en) * | 1981-04-22 | 1985-02-19 | At&T Bell Laboratories | Process of making solid state devices using silicon containing organometallic plasma developed resists |
| US4377437A (en) * | 1981-05-22 | 1983-03-22 | Bell Telephone Laboratories, Incorporated | Device lithography by selective ion implantation |
| DE3378931D1 (en) * | 1982-03-26 | 1989-02-16 | Hitachi Ltd | Method for forming fine resist patterns |
| US4474621A (en) * | 1982-06-16 | 1984-10-02 | International Telephone And Telegraph Corporation | Method for low temperature ashing in a plasma |
| US4517276A (en) * | 1982-11-29 | 1985-05-14 | Varian Associates, Inc. | Metal-containing organic photoresists |
| US5215867A (en) * | 1983-09-16 | 1993-06-01 | At&T Bell Laboratories | Method with gas functionalized plasma developed layer |
| CA1248402A (en) * | 1983-09-16 | 1989-01-10 | Larry E. Stillwagon | Method of making articles using gas functionalized plasma developed layer |
| US4497891A (en) * | 1983-10-25 | 1985-02-05 | International Business Machines Corporation | Dry-developed, negative working electron resist system |
| US4552833A (en) * | 1984-05-14 | 1985-11-12 | International Business Machines Corporation | Radiation sensitive and oxygen plasma developable resist |
| US4670372A (en) * | 1984-10-15 | 1987-06-02 | Petrarch Systems, Inc. | Process of developing radiation imaged photoresist with alkaline developer solution including a carboxylated surfactant |
| US4613561A (en) * | 1984-10-17 | 1986-09-23 | James Marvin Lewis | Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution |
| GB8427149D0 (en) * | 1984-10-26 | 1984-12-05 | Ucb Sa | Resist materials |
| GB2171530B (en) * | 1985-02-27 | 1989-06-28 | Imtec Products Inc | Method of producing reversed photoresist images by vapour diffusion |
| US4981909A (en) * | 1985-03-19 | 1991-01-01 | International Business Machines Corporation | Plasma-resistant polymeric material, preparation thereof, and use thereof |
| US4782008A (en) * | 1985-03-19 | 1988-11-01 | International Business Machines Corporation | Plasma-resistant polymeric material, preparation thereof, and use thereof |
| US4710449A (en) * | 1986-01-29 | 1987-12-01 | Petrarch Systems, Inc. | High contrast low metal ion positive photoresist developing method using aqueous base solutions with surfactants |
| US4737425A (en) * | 1986-06-10 | 1988-04-12 | International Business Machines Corporation | Patterned resist and process |
| US4690838A (en) * | 1986-08-25 | 1987-09-01 | International Business Machines Corporation | Process for enhancing the resistance of a resist image to reactive ion etching and to thermal flow |
| US4968582A (en) * | 1988-06-28 | 1990-11-06 | Mcnc And University Of Nc At Charlotte | Photoresists resistant to oxygen plasmas |
| US5114827A (en) * | 1988-06-28 | 1992-05-19 | Microelectronics Center Of N.C. | Photoresists resistant to oxygen plasmas |
| US5061604A (en) * | 1990-05-04 | 1991-10-29 | Minnesota Mining And Manufacturing Company | Negative crystalline photoresists for UV photoimaging |
| JP2603148B2 (ja) * | 1990-06-08 | 1997-04-23 | 三菱電機株式会社 | パターン形成方法 |
| KR100234292B1 (ko) * | 1997-10-08 | 1999-12-15 | 윤종용 | 광디스크 제작용 마스터 디스크 제조방법 |
| CA2381128A1 (en) * | 2002-04-09 | 2003-10-09 | Quantiscript Inc. | Plasma polymerized electron beam resist |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3705055A (en) * | 1970-09-18 | 1972-12-05 | Western Electric Co | Method of descumming photoresist patterns |
| US3867216A (en) * | 1972-05-12 | 1975-02-18 | Adir Jacob | Process and material for manufacturing semiconductor devices |
| US4007047A (en) * | 1974-06-06 | 1977-02-08 | International Business Machines Corporation | Modified processing of positive photoresists |
| JPS5173389A (ja) * | 1974-12-23 | 1976-06-25 | Hitachi Ltd | Gasupurazumanyoruhotorejisutomakuno jokyoho |
| SU679923A1 (ru) | 1976-02-11 | 1979-08-15 | Предприятие П/Я Х-5476 | Позитивный фоторезист |
| JPS5427369A (en) * | 1977-08-01 | 1979-03-01 | Hitachi Ltd | Pattern formation method |
| US4132586A (en) * | 1977-12-20 | 1979-01-02 | International Business Machines Corporation | Selective dry etching of substrates |
| US4201579A (en) * | 1978-06-05 | 1980-05-06 | Motorola, Inc. | Method for removing photoresist by hydrogen plasma |
| US4241165A (en) * | 1978-09-05 | 1980-12-23 | Motorola, Inc. | Plasma development process for photoresist |
-
1980
- 1980-04-30 US US06/145,163 patent/US4307178A/en not_active Expired - Lifetime
-
1981
- 1981-02-16 CA CA371,001A patent/CA1132832A/en not_active Expired
- 1981-03-13 JP JP3550481A patent/JPS56161643A/ja active Granted
- 1981-04-08 DE DE8181102643T patent/DE3162480D1/de not_active Expired
- 1981-04-08 EP EP81102643A patent/EP0038967B1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0038967B1 (en) | 1984-03-07 |
| JPS6155246B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-11-27 |
| JPS56161643A (en) | 1981-12-12 |
| EP0038967A1 (en) | 1981-11-04 |
| DE3162480D1 (en) | 1984-04-12 |
| US4307178A (en) | 1981-12-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |