CA1128670A - Semiconductor device having a mos-capacitor - Google Patents

Semiconductor device having a mos-capacitor

Info

Publication number
CA1128670A
CA1128670A CA308,685A CA308685A CA1128670A CA 1128670 A CA1128670 A CA 1128670A CA 308685 A CA308685 A CA 308685A CA 1128670 A CA1128670 A CA 1128670A
Authority
CA
Canada
Prior art keywords
layer
zone
highly doped
semiconductor
doped zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA308,685A
Other languages
English (en)
French (fr)
Inventor
Joachim Goerth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19772735529 external-priority patent/DE2735529A1/de
Priority claimed from DE2826192A external-priority patent/DE2826192C2/de
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of CA1128670A publication Critical patent/CA1128670A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H03B5/366—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current
    • H03B5/368—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current the means being voltage variable capacitance diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00—Continuous tuning
    • H03J3/02—Details
    • H03J3/16—Tuning without displacement of reactive element, e.g. by varying permeability
    • H03J3/18—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
    • H03J3/185—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/004—Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Amplifiers (AREA)
CA308,685A 1977-08-06 1978-08-03 Semiconductor device having a mos-capacitor Expired CA1128670A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DEP2735529.9 1977-08-06
DE19772735529 DE2735529A1 (de) 1977-08-06 1977-08-06 Halbleiterbauelement mit einer mos-kapazitaet
DEP2826192.9 1978-06-15
DE2826192A DE2826192C2 (de) 1978-06-15 1978-06-15 Schaltungsanordnung mit einem Halbleiterbauelement mit einer MOS-Kapazität

Publications (1)

Publication Number Publication Date
CA1128670A true CA1128670A (en) 1982-07-27

Family

ID=25772483

Family Applications (1)

Application Number Title Priority Date Filing Date
CA308,685A Expired CA1128670A (en) 1977-08-06 1978-08-03 Semiconductor device having a mos-capacitor

Country Status (7)

Country Link
US (2) US4214252A (en, 2012)
JP (1) JPS5448490A (en, 2012)
CA (1) CA1128670A (en, 2012)
FR (1) FR2399738A1 (en, 2012)
GB (1) GB2002580B (en, 2012)
IT (1) IT1097683B (en, 2012)
NL (1) NL185592C (en, 2012)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56129423A (en) * 1980-03-14 1981-10-09 Sony Corp Triangle wave generating circuit
JPS5771165A (en) * 1980-10-22 1982-05-01 Toshiba Corp Semiconductor device
DE3174824D1 (en) * 1980-12-17 1986-07-17 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit
FR2502864B1 (fr) * 1981-03-24 1986-09-05 Asulab Sa Circuit integre pour oscillateur a frequence reglable
JPS58107703A (ja) * 1981-12-21 1983-06-27 Matsushita Electric Ind Co Ltd 電圧制御発振器
JPS5985104A (ja) * 1982-11-05 1984-05-17 Toshiba Corp 発振装置
JPS59159560A (ja) * 1983-03-01 1984-09-10 Toshiba Corp 半導体装置
JPS6068662U (ja) * 1983-10-17 1985-05-15 三洋電機株式会社 集積化コンデンサ
JPS60170964A (ja) * 1984-02-15 1985-09-04 Rohm Co Ltd 容量素子
US4786828A (en) * 1987-05-15 1988-11-22 Hoffman Charles R Bias scheme for achieving voltage independent capacitance
JP2623692B2 (ja) * 1988-01-22 1997-06-25 ソニー株式会社 半導体回路装置
US5006480A (en) * 1988-08-08 1991-04-09 Hughes Aircraft Company Metal gate capacitor fabricated with a silicon gate MOS process
US5136357A (en) * 1989-06-26 1992-08-04 Micron Technology, Inc. Low-noise, area-efficient, high-frequency clock signal distribution line structure
JP2761961B2 (ja) * 1990-04-06 1998-06-04 健一 上山 半導体可変容量素子
US5113153A (en) * 1991-05-20 1992-05-12 International Business Machines Corporation High-frequency monolithic oscillator structure for third-overtone crystals
US5602052A (en) * 1995-04-24 1997-02-11 Harris Corporation Method of forming dummy island capacitor
US6014064A (en) * 1996-07-28 2000-01-11 The Whitaker Corporation Heterolithic voltage controlled oscillator
US6420747B2 (en) 1999-02-10 2002-07-16 International Business Machines Corporation MOSCAP design for improved reliability
US7098753B1 (en) 2003-06-13 2006-08-29 Silicon Clocks, Inc. Oscillator with variable reference
US7324561B1 (en) 2003-06-13 2008-01-29 Silicon Clocks Inc. Systems and methods for generating an output oscillation signal with low jitter
JP5927882B2 (ja) * 2011-12-08 2016-06-01 セイコーエプソン株式会社 発振回路、及び電子機器
KR101607764B1 (ko) * 2014-08-27 2016-03-31 숭실대학교산학협력단 차동 구조의 발진기

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5314113Y2 (en, 2012) * 1971-12-28 1978-04-15
JPS5524264B2 (en, 2012) * 1972-02-08 1980-06-27
US3886458A (en) * 1972-12-12 1975-05-27 Sony Corp Frequency converter circuit with integrated injection capacitor
US3893146A (en) * 1973-12-26 1975-07-01 Teletype Corp Semiconductor capacitor structure and memory cell, and method of making
US3953875A (en) * 1974-01-02 1976-04-27 Motorola, Inc. Capacitor structure and circuit facilitating increased frequency stability of integrated circuits
US3973221A (en) * 1975-04-07 1976-08-03 Motorola, Inc. Voltage controlled crystal oscillator apparatus
US4081766A (en) * 1977-01-24 1978-03-28 Motorola, Inc. Crystal tuned voltage controlled oscillator

Also Published As

Publication number Publication date
GB2002580A (en) 1979-02-21
JPS5448490A (en) 1979-04-17
FR2399738B1 (en, 2012) 1984-06-01
US4214252A (en) 1980-07-22
FR2399738A1 (fr) 1979-03-02
NL185592B (nl) 1989-12-18
IT1097683B (it) 1985-08-31
US4297654A (en) 1981-10-27
JPS6124824B2 (en, 2012) 1986-06-12
NL185592C (nl) 1990-05-16
GB2002580B (en) 1982-01-27
NL7808111A (nl) 1979-02-08
IT7826454A0 (it) 1978-08-03

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Legal Events

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