CA1128634A - Semiconductor laser structure and manufacture - Google Patents
Semiconductor laser structure and manufactureInfo
- Publication number
- CA1128634A CA1128634A CA327,990A CA327990A CA1128634A CA 1128634 A CA1128634 A CA 1128634A CA 327990 A CA327990 A CA 327990A CA 1128634 A CA1128634 A CA 1128634A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- laser
- recess
- active zone
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 18
- 230000005855 radiation Effects 0.000 claims abstract description 10
- 230000006872 improvement Effects 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 5
- 230000005284 excitation Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 56
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 239000000835 fiber Substances 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- RHKSESDHCKYTHI-UHFFFAOYSA-N 12006-40-5 Chemical compound [Zn].[As]=[Zn].[As]=[Zn] RHKSESDHCKYTHI-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2822146A DE2822146C2 (de) | 1978-05-20 | 1978-05-20 | Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode |
| DEP2822146.7 | 1978-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1128634A true CA1128634A (en) | 1982-07-27 |
Family
ID=6039879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA327,990A Expired CA1128634A (en) | 1978-05-20 | 1979-05-22 | Semiconductor laser structure and manufacture |
Country Status (7)
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3102875C2 (de) * | 1978-05-20 | 1984-02-16 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Heterostruktur-Halbleiterlaserdiode |
| DE2933035A1 (de) * | 1979-08-16 | 1981-03-26 | Licentia Patent-Verwaltungs-Gmbh, 60596 Frankfurt | Halbleiterlaser |
| DE3002469A1 (de) * | 1980-01-24 | 1981-07-30 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Optische faserleitung zwischen einem halbleiterlaser und einem ersten faserstecker |
| JPS56110289A (en) * | 1980-02-05 | 1981-09-01 | Mitsubishi Electric Corp | Manufacture of semiconductor laser element |
| DE3005645A1 (de) * | 1980-02-15 | 1981-08-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur modulation eines halbleiterlasers |
| DE3012361A1 (de) * | 1980-03-29 | 1981-10-08 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiterlaser |
| JPS5710992A (en) * | 1980-06-24 | 1982-01-20 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture therefor |
| US4408331A (en) * | 1981-03-25 | 1983-10-04 | Bell Telephone Laboratories, Incorporated | V-Groove semiconductor light emitting devices |
| GB2111743B (en) * | 1981-08-25 | 1985-11-27 | Handotai Kenkyu Shinkokai | Semiconductor laser |
| NL8104068A (nl) * | 1981-09-02 | 1983-04-05 | Philips Nv | Halfgeleiderlaser. |
| NL8201409A (nl) * | 1982-04-02 | 1983-11-01 | Philips Nv | Halfgeleiderlaser en werkwijze ter vervaardiging ervan. |
| DE3214700A1 (de) * | 1982-04-21 | 1983-10-27 | Licentia Gmbh | Optisches nachrichtenuebertragungssystem |
| JPS5967677A (ja) * | 1982-07-01 | 1984-04-17 | Semiconductor Res Found | 光集積回路 |
| DE3231732A1 (de) * | 1982-08-26 | 1984-03-01 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Elektrischer kontakt |
| NL8301331A (nl) * | 1983-04-15 | 1984-11-01 | Philips Nv | Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan. |
| DE3343051A1 (de) * | 1983-11-29 | 1985-06-05 | Licentia Gmbh | Verfahren und anordnung zum erzeugen elektrischer steuerimpulse |
| DE3406361A1 (de) * | 1984-02-22 | 1985-08-29 | Telefunken electronic GmbH, 7100 Heilbronn | Doppel-heterostruktur-laser und verfahren zu seiner herstellung |
| US4605942A (en) * | 1984-10-09 | 1986-08-12 | At&T Bell Laboratories | Multiple wavelength light emitting devices |
| DE3604295A1 (de) * | 1986-02-12 | 1987-08-13 | Telefunken Electronic Gmbh | Heterostruktur-halbleiterlaserdiode |
| DE3604294A1 (de) * | 1986-02-12 | 1987-08-13 | Telefunken Electronic Gmbh | Heterostruktur-halbleiterlaserdioden |
| US5770475A (en) * | 1996-09-23 | 1998-06-23 | Electronics And Telecommunications Research Institute | Crystal growth method for compound semiconductor |
| RU2146842C1 (ru) * | 1999-04-27 | 2000-03-20 | Микаелян Геворк Татевосович | Способ изготовления полупроводникового светоизлучающего элемента |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1273284A (en) * | 1970-10-13 | 1972-05-03 | Standard Telephones Cables Ltd | Improvements in or relating to injection lasers |
| JPS5622395B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-10-17 | 1981-05-25 | ||
| US3946334A (en) * | 1973-11-14 | 1976-03-23 | Nippon Electric Company, Limited | Injection semiconductor laser device |
| JPS5810874B2 (ja) * | 1974-05-21 | 1983-02-28 | 三菱電機株式会社 | ハンドウタイハツコウソシ |
| US3938172A (en) * | 1974-05-22 | 1976-02-10 | Rca Corporation | Semiconductor injection laser |
| GB1494518A (en) * | 1975-02-04 | 1977-12-07 | Standard Telephones Cables Ltd | Heterostructure lasers |
| JPS52106283A (en) * | 1976-03-03 | 1977-09-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser unit |
| JPS52109884A (en) * | 1976-03-11 | 1977-09-14 | Nec Corp | Stripe type hetero junction semoonductor laser |
-
1978
- 1978-05-20 DE DE2822146A patent/DE2822146C2/de not_active Expired
-
1979
- 1979-05-10 GB GB7916322A patent/GB2021307B/en not_active Expired
- 1979-05-18 IT IT22832/79A patent/IT1112931B/it active
- 1979-05-18 FR FR7912806A patent/FR2426348B1/fr not_active Expired
- 1979-05-18 JP JP6058679A patent/JPS54152988A/ja active Pending
- 1979-05-21 US US06/041,171 patent/US4278949A/en not_active Expired - Lifetime
- 1979-05-22 CA CA327,990A patent/CA1128634A/en not_active Expired
-
1987
- 1987-08-24 JP JP1987127526U patent/JPS6422068U/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2426348B1 (fr) | 1986-03-28 |
| GB2021307A (en) | 1979-11-28 |
| IT1112931B (it) | 1986-01-20 |
| JPS6422068U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-02-03 |
| FR2426348A1 (fr) | 1979-12-14 |
| DE2822146A1 (de) | 1979-11-22 |
| US4278949A (en) | 1981-07-14 |
| JPS54152988A (en) | 1979-12-01 |
| IT7922832A0 (it) | 1979-05-18 |
| DE2822146C2 (de) | 1982-11-25 |
| GB2021307B (en) | 1982-07-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry | ||
| MKEX | Expiry |
Effective date: 19990727 |