CA1121306A - Device fabrication by plasma etching of aluminum rich surfaces - Google Patents

Device fabrication by plasma etching of aluminum rich surfaces

Info

Publication number
CA1121306A
CA1121306A CA000332162A CA332162A CA1121306A CA 1121306 A CA1121306 A CA 1121306A CA 000332162 A CA000332162 A CA 000332162A CA 332162 A CA332162 A CA 332162A CA 1121306 A CA1121306 A CA 1121306A
Authority
CA
Canada
Prior art keywords
aluminum
percent
etching
etched
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000332162A
Other languages
English (en)
French (fr)
Inventor
Hyman J. Levinstein
David N. Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1121306A publication Critical patent/CA1121306A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P70/273—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA000332162A 1978-07-31 1979-07-19 Device fabrication by plasma etching of aluminum rich surfaces Expired CA1121306A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/929,567 US4256534A (en) 1978-07-31 1978-07-31 Device fabrication by plasma etching
US929,567 1978-07-31

Publications (1)

Publication Number Publication Date
CA1121306A true CA1121306A (en) 1982-04-06

Family

ID=25458063

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000332162A Expired CA1121306A (en) 1978-07-31 1979-07-19 Device fabrication by plasma etching of aluminum rich surfaces

Country Status (14)

Country Link
US (1) US4256534A (OSRAM)
JP (1) JPS5914111B2 (OSRAM)
AU (1) AU524453B2 (OSRAM)
BE (1) BE877895A (OSRAM)
CA (1) CA1121306A (OSRAM)
DE (1) DE2930291A1 (OSRAM)
ES (1) ES482959A1 (OSRAM)
FR (1) FR2445622A1 (OSRAM)
GB (1) GB2026393B (OSRAM)
IE (1) IE48605B1 (OSRAM)
IL (1) IL57890A (OSRAM)
IT (1) IT1123506B (OSRAM)
NL (1) NL189738B (OSRAM)
SE (1) SE442357B (OSRAM)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4569718A (en) * 1980-08-22 1986-02-11 At&T Bell Laboratories Method for plasma etching III-V semiconductors with a BCl3 -Cl2 gas
JPS5747876A (en) * 1980-09-03 1982-03-18 Toshiba Corp Plasma etching apparatus and method
US4380488A (en) * 1980-10-14 1983-04-19 Branson International Plasma Corporation Process and gas mixture for etching aluminum
DE3140675A1 (de) * 1980-10-14 1982-06-16 Branson International Plasma Corp., 94544 Hayward, Calif. Verfahren und gasgemisch zum aetzen von aluminium
US4373990A (en) * 1981-01-08 1983-02-15 Bell Telephone Laboratories, Incorporated Dry etching aluminum
US4343677A (en) * 1981-03-23 1982-08-10 Bell Telephone Laboratories, Incorporated Method for patterning films using reactive ion etching thereof
US4351696A (en) * 1981-10-28 1982-09-28 Fairchild Camera & Instrument Corp. Corrosion inhibition of aluminum or aluminum alloy film utilizing bromine-containing plasma
US4372806A (en) * 1981-12-30 1983-02-08 Rca Corporation Plasma etching technique
US4370196A (en) * 1982-03-25 1983-01-25 Rca Corporation Anisotropic etching of aluminum
DE3215410A1 (de) * 1982-04-24 1983-10-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen von oeffnungen mit hilfe einer maske in einer auf einer unterlage befindlichen schicht
US4426246A (en) * 1982-07-26 1984-01-17 Bell Telephone Laboratories, Incorporated Plasma pretreatment with BCl3 to remove passivation formed by fluorine-etch
US4412885A (en) * 1982-11-03 1983-11-01 Applied Materials, Inc. Materials and methods for plasma etching of aluminum and aluminum alloys
EP0117258B1 (de) * 1983-02-23 1987-05-20 Ibm Deutschland Gmbh Verfahren zur Herstellung von haftfesten Metallschichten auf Kunststoffsubstraten
US4505782A (en) * 1983-03-25 1985-03-19 Lfe Corporation Plasma reactive ion etching of aluminum and aluminum alloys
US4778562A (en) * 1984-08-13 1988-10-18 General Motors Corporation Reactive ion etching of tin oxide films using neutral reactant gas containing hydrogen
US4544444A (en) * 1984-08-15 1985-10-01 General Motors Corporation Reactive ion etching of tin oxide films using silicon tetrachloride reactant gas
JPS6184835A (ja) * 1984-10-02 1986-04-30 Matsushita Electric Ind Co Ltd アルミニウムおよびアルミニウム―シリコン合金の反応性イオンエッチング方法
US5171525A (en) * 1987-02-25 1992-12-15 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4917586A (en) * 1987-02-25 1990-04-17 Adir Jacob Process for dry sterilization of medical devices and materials
US4801427A (en) * 1987-02-25 1989-01-31 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5087418A (en) * 1987-02-25 1992-02-11 Adir Jacob Process for dry sterilization of medical devices and materials
US5200158A (en) * 1987-02-25 1993-04-06 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4943417A (en) * 1987-02-25 1990-07-24 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4976920A (en) * 1987-07-14 1990-12-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4818488A (en) * 1987-02-25 1989-04-04 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4931261A (en) * 1987-02-25 1990-06-05 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4828649A (en) * 1987-07-16 1989-05-09 Texas Instruments Incorporated Method for etching an aluminum film doped with silicon
US4919748A (en) * 1989-06-30 1990-04-24 At&T Bell Laboratories Method for tapered etching
JPH03156927A (ja) * 1989-10-24 1991-07-04 Hewlett Packard Co <Hp> アルミ・メタライゼーションのパターン形成方法
US5318664A (en) * 1990-06-25 1994-06-07 General Electric Company Patterning of indium-tin oxide via selective reactive ion etching
US5211804A (en) * 1990-10-16 1993-05-18 Oki Electric Industry, Co., Ltd. Method for dry etching
US5290396A (en) * 1991-06-06 1994-03-01 Lsi Logic Corporation Trench planarization techniques
US5413966A (en) * 1990-12-20 1995-05-09 Lsi Logic Corporation Shallow trench etch
DE4107006A1 (de) * 1991-03-05 1992-09-10 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen
US5225358A (en) * 1991-06-06 1993-07-06 Lsi Logic Corporation Method of forming late isolation with polishing
US5252503A (en) * 1991-06-06 1993-10-12 Lsi Logic Corporation Techniques for forming isolation structures
US5248625A (en) * 1991-06-06 1993-09-28 Lsi Logic Corporation Techniques for forming isolation structures
US5286337A (en) * 1993-01-25 1994-02-15 North American Philips Corporation Reactive ion etching or indium tin oxide
US5779926A (en) * 1994-09-16 1998-07-14 Applied Materials, Inc. Plasma process for etching multicomponent alloys
JPH08130206A (ja) * 1994-10-31 1996-05-21 Sony Corp Ａｌ系金属層のプラズマエッチング方法
JPH07169756A (ja) * 1994-11-07 1995-07-04 Semiconductor Energy Lab Co Ltd プラズマエッチング方法
US7294578B1 (en) 1995-06-02 2007-11-13 Micron Technology, Inc. Use of a plasma source to form a layer during the formation of a semiconductor device
JPH08306675A (ja) * 1996-05-13 1996-11-22 Semiconductor Energy Lab Co Ltd プラズマエッチング方法
US6008140A (en) 1997-08-13 1999-12-28 Applied Materials, Inc. Copper etch using HCI and HBr chemistry
US6165375A (en) 1997-09-23 2000-12-26 Cypress Semiconductor Corporation Plasma etching method
US6143476A (en) * 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
TWI246633B (en) 1997-12-12 2006-01-01 Applied Materials Inc Method of pattern etching a low k dielectric layen
US5994235A (en) * 1998-06-24 1999-11-30 Lam Research Corporation Methods for etching an aluminum-containing layer
EP1394835A1 (en) * 2002-08-29 2004-03-03 STMicroelectronics S.r.l. A method and apparatus for detecting a leak of external air into a plasma reactor
US20040192059A1 (en) * 2003-03-28 2004-09-30 Mosel Vitelic, Inc. Method for etching a titanium-containing layer prior to etching an aluminum layer in a metal stack
DE10324570A1 (de) * 2003-05-30 2004-12-23 Daimlerchrysler Ag Vorrichtung und Verfahren zur Oberflächenbehandlung einer metallischen Laufbahn einer Maschine mittels Plasmatechnologie
US9051655B2 (en) 2013-09-16 2015-06-09 Applied Materials, Inc. Boron ionization for aluminum oxide etch enhancement
US9484216B1 (en) 2015-06-02 2016-11-01 Sandia Corporation Methods for dry etching semiconductor devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
US4030967A (en) * 1976-08-16 1977-06-21 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide
CA1059882A (en) * 1976-08-16 1979-08-07 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide

Also Published As

Publication number Publication date
AU524453B2 (en) 1982-09-16
IT7924774A0 (it) 1979-07-30
IL57890A (en) 1981-12-31
NL189738B (nl) 1993-02-01
SE7906298L (sv) 1980-02-01
GB2026393B (en) 1982-11-03
SE442357B (sv) 1985-12-16
IL57890A0 (en) 1979-11-30
NL7905867A (nl) 1980-02-04
US4256534A (en) 1981-03-17
ES482959A1 (es) 1980-03-01
BE877895A (fr) 1979-11-16
DE2930291A1 (de) 1980-02-21
IE791447L (en) 1980-01-31
JPS5521594A (en) 1980-02-15
GB2026393A (en) 1980-02-06
IE48605B1 (en) 1985-03-20
AU4923679A (en) 1980-02-07
FR2445622B1 (OSRAM) 1984-08-10
IT1123506B (it) 1986-04-30
JPS5914111B2 (ja) 1984-04-03
FR2445622A1 (fr) 1980-07-25

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Legal Events

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