CA1118877A - Thin film cds/cdte photovoltaic cell - Google Patents

Thin film cds/cdte photovoltaic cell

Info

Publication number
CA1118877A
CA1118877A CA000310841A CA310841A CA1118877A CA 1118877 A CA1118877 A CA 1118877A CA 000310841 A CA000310841 A CA 000310841A CA 310841 A CA310841 A CA 310841A CA 1118877 A CA1118877 A CA 1118877A
Authority
CA
Canada
Prior art keywords
cell
layers
oxygen
layer
conversion efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000310841A
Other languages
English (en)
French (fr)
Inventor
Yuan-Sheng Tyan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of CA1118877A publication Critical patent/CA1118877A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02406—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/0248—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
CA000310841A 1978-06-02 1978-09-07 Thin film cds/cdte photovoltaic cell Expired CA1118877A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US911,843 1978-06-02
US05/911,843 US4207119A (en) 1978-06-02 1978-06-02 Polycrystalline thin film CdS/CdTe photovoltaic cell

Publications (1)

Publication Number Publication Date
CA1118877A true CA1118877A (en) 1982-02-23

Family

ID=25430949

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000310841A Expired CA1118877A (en) 1978-06-02 1978-09-07 Thin film cds/cdte photovoltaic cell

Country Status (7)

Country Link
US (1) US4207119A (de)
EP (1) EP0006025B1 (de)
JP (1) JPS54159193A (de)
AU (1) AU526228B2 (de)
CA (1) CA1118877A (de)
DE (1) DE2964526D1 (de)
IL (1) IL57438A (de)

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4375644A (en) * 1979-11-30 1983-03-01 Ricoh Co., Ltd. Photoelectric element, picture-reading device including the same, and process for production thereof
JPS5691437A (en) * 1979-12-26 1981-07-24 Nippon Hoso Kyokai <Nhk> Preparation of metallized element
US5053845A (en) * 1980-05-23 1991-10-01 Ricoh Company, Ltd. Thin-film device
CA1171505A (en) * 1980-07-23 1984-07-24 Katherine V. Clem Conductive elements for photovoltaic cells
US4371740A (en) * 1980-07-23 1983-02-01 Eastman Kodak Company Conductive elements for photovoltaic cells
US4315096A (en) * 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses
US4319069A (en) * 1980-07-25 1982-03-09 Eastman Kodak Company Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation
US4360542A (en) * 1981-03-31 1982-11-23 Argus Chemical Corporation Process for the preparation of thin films of cadmium sulfide and precursor solutions of cadmium ammonia thiocyanate complex useful therein
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
US4621032A (en) * 1985-07-29 1986-11-04 Energy Conversion Devices, Inc. Method of forming a data storage medium and data storage device by congruent sublimation
US4909857A (en) * 1986-05-06 1990-03-20 Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films
IN167516B (de) * 1986-05-06 1990-11-10 Standard Oil Co Ohio
US5030477A (en) * 1988-11-14 1991-07-09 Xerox Corporation Processes for the preparation and processes for suppressing the fractionation of chalcogenide alloys
US4950615A (en) * 1989-02-06 1990-08-21 International Solar Electric Technology, Inc. Method and making group IIB metal - telluride films and solar cells
DE4132882C2 (de) * 1991-10-03 1996-05-09 Antec Angewandte Neue Technolo Verfahren zur Herstellung von pn CdTe/CdS-Dünnschichtsolarzellen
US5501744A (en) * 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
US5279678A (en) * 1992-01-13 1994-01-18 Photon Energy, Inc. Photovoltaic cell with thin CS layer
US5248349A (en) * 1992-05-12 1993-09-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
US5366764A (en) * 1992-06-15 1994-11-22 Sunthankar Mandar B Environmentally safe methods and apparatus for depositing and/or reclaiming a metal or semi-conductor material using sublimation
IL110390A0 (en) * 1993-07-21 1994-10-21 Photon Energy Inc Method for making a photovoltaic device
US5484736A (en) * 1994-09-19 1996-01-16 Midwest Research Institute Process for producing large grain cadmium telluride
US5712187A (en) * 1995-11-09 1998-01-27 Midwest Research Institute Variable temperature semiconductor film deposition
US6169246B1 (en) 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making
US5747199A (en) * 1997-01-24 1998-05-05 Eastman Kodak Company Method of making color filter arrays by transferring two or more colorants simultaneously
US5776641A (en) * 1997-01-24 1998-07-07 Eastman Kodak Company Method of making color filter arrays by colorant transfer using chemical mechanical polishing
US5811156A (en) * 1997-01-24 1998-09-22 Eastman Kodak Company Method of making a color filter array by colorant transfer and etch
JP2001060702A (ja) 1999-06-18 2001-03-06 Nippon Sheet Glass Co Ltd 光電変換装置用基板およびこれを用いた光電変換装置
JP2001060708A (ja) * 1999-06-18 2001-03-06 Nippon Sheet Glass Co Ltd 透明積層体およびこれを用いたガラス物品
DE19958878B4 (de) * 1999-12-07 2012-01-19 Saint-Gobain Glass Deutschland Gmbh Dünnschicht-Solarzelle
US6962613B2 (en) * 2000-03-24 2005-11-08 Cymbet Corporation Low-temperature fabrication of thin-film energy-storage devices
FR2828214B1 (fr) * 2001-08-06 2003-12-12 Centre Nat Rech Scient PROCEDE D'OBTENTION D'UN MONOCRISTAL DE CdTd OU DE CdZnTe, ET MONOCRISTAL OBTENU PAR CE PROCEDE
AU2002248199A1 (en) * 2001-12-13 2003-06-30 Midwest Research Institute Semiconductor device with higher oxygen (o2) concentration within window layers and method for making
US7603144B2 (en) * 2003-01-02 2009-10-13 Cymbet Corporation Active wireless tagging system on peel and stick substrate
US7294209B2 (en) * 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
US20040131760A1 (en) * 2003-01-02 2004-07-08 Stuart Shakespeare Apparatus and method for depositing material onto multiple independently moving substrates in a chamber
US6906436B2 (en) * 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
US20050098202A1 (en) * 2003-11-10 2005-05-12 Maltby Robert E.Jr. Non-planar photocell
WO2005067645A2 (en) * 2004-01-06 2005-07-28 Cymbet Corporation Layered barrier structure having one or more definable layers and method
US20050257824A1 (en) * 2004-05-24 2005-11-24 Maltby Michael G Photovoltaic cell including capping layer
US7195848B2 (en) * 2004-08-30 2007-03-27 Eastman Kodak Company Method of making inlaid color filter arrays
JP2009502011A (ja) * 2005-07-15 2009-01-22 シンベット・コーポレイション 軟質および硬質電解質層付き薄膜電池および方法
US7776478B2 (en) * 2005-07-15 2010-08-17 Cymbet Corporation Thin-film batteries with polymer and LiPON electrolyte layers and method
US20070240758A1 (en) * 2006-04-14 2007-10-18 Thomas Spartz Double-sided solar module
US20080128020A1 (en) * 2006-11-30 2008-06-05 First Solar, Inc. Photovoltaic devices including a metal stack
KR101538817B1 (ko) * 2007-09-25 2015-07-22 퍼스트 솔라, 인코포레이티드 헤테로접합을 포함하는 광기전 장치
KR101614554B1 (ko) 2007-11-02 2016-04-21 퍼스트 솔라, 인코포레이티드 도핑된 반도체 막을 포함하는 광기전 장치
GB0809530D0 (en) * 2008-05-27 2008-07-02 Univ Durham Improved physical vapour deposition processes
US20090301543A1 (en) * 2008-06-04 2009-12-10 Solexant Corp. Thin film solar cells with monolithic integration and backside contact
KR20110097957A (ko) * 2008-12-18 2011-08-31 퍼스트 솔라, 인코포레이티드 후방 금속 컨택트를 포함하는 광기전 장치
CN101820018B (zh) * 2009-02-27 2014-12-17 比亚迪股份有限公司 一种CdS薄膜的制备方法
US8618411B2 (en) * 2009-04-08 2013-12-31 David M. Schwartz Method of making photovoltaic cell
KR101687219B1 (ko) * 2009-11-05 2016-12-16 다우 글로벌 테크놀로지스 엘엘씨 ｎ형 칼코게나이드 합성물의 제조 및 광전지 디바이스에서의 그 용도
JP5610798B2 (ja) * 2010-03-12 2014-10-22 キヤノン株式会社 シンチレータの製造方法
US8252619B2 (en) * 2010-04-23 2012-08-28 Primestar Solar, Inc. Treatment of thin film layers photovoltaic module manufacture
CN102893408B (zh) * 2010-05-13 2016-05-11 第一太阳能有限公司 光伏器件导电层
US8044477B1 (en) 2010-09-30 2011-10-25 General Electric Company Photovoltaic device and method for making
US9608144B2 (en) 2011-06-01 2017-03-28 First Solar, Inc. Photovoltaic devices and method of making
US9447489B2 (en) * 2011-06-21 2016-09-20 First Solar, Inc. Methods of making photovoltaic devices and photovoltaic devices
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US11996517B2 (en) 2011-06-29 2024-05-28 Space Charge, LLC Electrochemical energy storage devices
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US8912037B2 (en) 2011-07-28 2014-12-16 First Solar, Inc. Method for making photovoltaic devices using oxygenated semiconductor thin film layers
CN102286741B (zh) * 2011-09-02 2012-12-19 南京大学 碲化镉薄膜制备方法
US20130074912A1 (en) * 2011-09-22 2013-03-28 Rosestreet Labs, Llc Band structure engineering for improved efficiency of cdte based photovoltaics
US20130160810A1 (en) * 2011-12-22 2013-06-27 General Electric Company Photovoltaic device and method of making
US10355148B2 (en) * 2014-02-10 2019-07-16 The University Of Toledo Iron pyrite nanocrystal film as a copper-free back contact for polycrystalline CdTe thin film solar cells
CN104313686B (zh) * 2014-10-31 2017-01-11 峨嵋半导体材料研究所 一种硫化镉气相合成方法
GB201514249D0 (en) 2015-08-12 2015-09-23 Trw Ltd Processing received radiation reflected from a target
US9954133B1 (en) * 2016-01-15 2018-04-24 Hrl Laboratories, Llc P-type chalcogenide and N-type silicon heterojunction infrared photodiodes and method of manufacturing thereof
DE102016101856B4 (de) * 2016-02-03 2017-11-30 Ctf Solar Gmbh Verfahren zum Abscheiden einer CdTe-Schicht auf einem Substrat
GB2557357B (en) 2016-12-08 2022-09-07 Trw Ltd Processing a signal representitive of at least one physical property of a physical system
EP3762989A4 (de) 2018-03-07 2021-12-15 Space Charge, LLC Dünnfilm-festkörper-energiespeichervorrichtungen

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3142586A (en) * 1961-12-11 1964-07-28 Clairex Corp Method for the manufacture of photosensitive elements
US3568306A (en) 1965-09-25 1971-03-09 Matsushita Electric Ind Co Ltd Method of making photovoltaic device by electroplating
US3811953A (en) * 1971-09-20 1974-05-21 American Cyanamid Co Light-transmitting electrically conducting cadmium stannate and methods of producing same
IN145018B (de) * 1974-08-22 1978-08-12 Westinghouse Electric Corp
JPS5138888A (en) * 1974-09-27 1976-03-31 Matsushita Electric Ind Co Ltd Handotaisoshino seizohoho
JPS5237785A (en) * 1975-09-20 1977-03-23 Agency Of Ind Science & Technol Process for production of photovoltaic elements
DK126876A (da) 1975-11-14 1977-05-15 Photon Power Inc Fremgangsmade ved fremstilling af et fotoelement
US4035197A (en) * 1976-03-30 1977-07-12 Eastman Kodak Company Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture

Also Published As

Publication number Publication date
EP0006025B1 (de) 1983-01-19
IL57438A0 (en) 1979-09-30
AU526228B2 (en) 1982-12-23
EP0006025A1 (de) 1979-12-12
IL57438A (en) 1982-07-30
JPS54159193A (en) 1979-12-15
AU4768579A (en) 1979-12-06
US4207119A (en) 1980-06-10
DE2964526D1 (en) 1983-02-24
JPS6252478B2 (de) 1987-11-05

Similar Documents

Publication Publication Date Title
CA1118877A (en) Thin film cds/cdte photovoltaic cell
Compaan et al. High efficiency, magnetron sputtered CdS/CdTe solar cells
Chu Thin film cadmium telluride solar cells by two chemical vapor deposition techniques
CA2239786C (en) Preparation of cuxinygazsen (x=0-2, y=0-2, z=0-2, n=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
CA1185347A (en) Thin layer p-n type heterojunction solar cells
EP0206585B1 (de) Photovoltaische Dünnfilmvorrichtung
US6137048A (en) Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby
CA2271412C (en) Photovoltaic device and its method of preparation
US8691619B2 (en) Laminated structure for CIS based solar cell, and integrated structure and manufacturing method for CIS based thin-film solar cell
Ma et al. Photovoltaic properties of n‐CdS/p‐CdTe heterojunctions prepared by spray pyrolysis
AU2011201197B2 (en) Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device
US4650921A (en) Thin film cadmium telluride solar cell
Compaan et al. 14% sputtered thin‐film solar cells based on CdTe
US4734381A (en) Method of making a thin film cadmium telluride solar cell
EP2402478B1 (de) Verfahren zur Herstellung einer leitfähigen transparenten Oxidfolienschicht.
AU2011201273B2 (en) Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device
AU2011201198A1 (en) Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device
Bayhan et al. Eects of Post Deposition Treatments on Vacuum Evaporated CdTe Thin Films and CdS= CdTe Heterojunction Devices
US20140134838A1 (en) Methods of annealing a conductive transparent oxide film layer for use in a thin film photovoltaic device
Compaan The status of and challenges in CdTe thin-film solar-cell technology
Bacaksiz et al. Light-assisted deposition of CdS thin films
Nouhi et al. Preliminary results on CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSe
Sharma et al. Effect of annealing on the opto-electronic properties of Cu 0.9 In 1.0 Se 2.0 films
KR101504318B1 (ko) 박막형 태양전지
Romeo et al. High Efficiency CdTe/CdS Thin Film solar Cells by a Process Suitable for Large Scale Production

Legal Events

Date Code Title Description
MKEX Expiry