CA1118114A - Control techniques for annealing semiconductors - Google Patents

Control techniques for annealing semiconductors

Info

Publication number
CA1118114A
CA1118114A CA000333912A CA333912A CA1118114A CA 1118114 A CA1118114 A CA 1118114A CA 000333912 A CA000333912 A CA 000333912A CA 333912 A CA333912 A CA 333912A CA 1118114 A CA1118114 A CA 1118114A
Authority
CA
Canada
Prior art keywords
annealing
reflectivity
layer
laser
pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000333912A
Other languages
English (en)
French (fr)
Inventor
Thirumalai N. C. Venkatesan
Clifford M. Surko
Richart E. Slusher
Jene A. Golovchenko
David H. Auston
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1118114A publication Critical patent/CA1118114A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02634—Homoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/09—Laser anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CA000333912A 1978-08-21 1979-08-16 Control techniques for annealing semiconductors Expired CA1118114A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US935,665 1978-08-21
US05/935,665 US4155779A (en) 1978-08-21 1978-08-21 Control techniques for annealing semiconductors

Publications (1)

Publication Number Publication Date
CA1118114A true CA1118114A (en) 1982-02-09

Family

ID=25467491

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000333912A Expired CA1118114A (en) 1978-08-21 1979-08-16 Control techniques for annealing semiconductors

Country Status (7)

Country Link
US (1) US4155779A (enExample)
JP (1) JPS55500615A (enExample)
CA (1) CA1118114A (enExample)
FR (1) FR2434483A1 (enExample)
GB (1) GB2040077B (enExample)
NL (1) NL7920078A (enExample)
WO (1) WO1980000509A1 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240843A (en) * 1978-05-23 1980-12-23 Western Electric Company, Inc. Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing
GB2056769B (en) * 1978-11-28 1983-03-30 Western Electric Co Dual wavelength laser annealing of material
US4234358A (en) * 1979-04-05 1980-11-18 Western Electric Company, Inc. Patterned epitaxial regrowth using overlapping pulsed irradiation
US4234356A (en) * 1979-06-01 1980-11-18 Bell Telephone Laboratories, Incorporated Dual wavelength optical annealing of materials
EP0171509B1 (en) * 1979-07-24 1990-10-31 Hughes Aircraft Company Silicon on sapphire laser process
US4242149A (en) * 1979-07-31 1980-12-30 The United States Of America As Represented By The Secretary Of The Army Method of making photodetectors using ion implantation and laser annealing
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
JPS5640275A (en) * 1979-09-12 1981-04-16 Hitachi Ltd Preparation of semiconductor device
US4309225A (en) * 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
US4257827A (en) * 1979-11-13 1981-03-24 International Business Machines Corporation High efficiency gettering in silicon through localized superheated melt formation
JPS5674921A (en) * 1979-11-22 1981-06-20 Toshiba Corp Manufacturing method of semiconductor and apparatus thereof
US4292093A (en) * 1979-12-28 1981-09-29 The United States Of America As Represented By The United States Department Of Energy Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces
US4322253A (en) * 1980-04-30 1982-03-30 Rca Corporation Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment
JPS577924A (en) * 1980-06-18 1982-01-16 Hitachi Ltd Semiconductor device and manufacture thereof
GB2134098B (en) * 1982-11-10 1987-01-28 Gen Electric Co Plc Methods of manufacturing optical components
GB2133618B (en) * 1983-01-05 1986-09-10 Gen Electric Co Plc Fabricating semiconductor circuits
JPS61289617A (ja) * 1985-06-18 1986-12-19 Sony Corp 薄膜単結晶の製造装置
NO157876C (no) * 1985-09-23 1988-06-01 Sintef Fremgangsmaate og apparat for gjennomfoering av varmebehandling.
EP0268301B1 (en) * 1986-11-20 1993-09-15 Nec Corporation Method and apparatus for writing a line on a patterned substrate
US4865683A (en) * 1988-11-03 1989-09-12 Lasa Industries, Inc. Method and apparatus for laser process control
US5155337A (en) * 1989-12-21 1992-10-13 North Carolina State University Method and apparatus for controlling rapid thermal processing systems
US5021362A (en) * 1989-12-29 1991-06-04 At&T Bell Laboratories Laser link blowing in integrateed circuit fabrication
US5198371A (en) * 1990-09-24 1993-03-30 Biota Corp. Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
US5372836A (en) * 1992-03-27 1994-12-13 Tokyo Electron Limited Method of forming polycrystalling silicon film in process of manufacturing LCD
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
KR100255689B1 (ko) * 1993-05-27 2000-05-01 윤종용 반도체 레이져 소자 및 그 제조방법
US5441569A (en) * 1993-11-29 1995-08-15 The United States Of America As Represented By The United States Department Of Energy Apparatus and method for laser deposition of durable coatings
US5688550A (en) * 1995-12-15 1997-11-18 Micron Technology, Inc. Method of forming polysilicon having a desired surface roughness
US6177127B1 (en) 1995-12-15 2001-01-23 Micron Technology, Inc. Method of monitoring emissivity
GB9624715D0 (en) * 1996-11-28 1997-01-15 Philips Electronics Nv Electronic device manufacture
GB0001568D0 (en) * 2000-01-24 2000-03-15 Isis Innovation Method and apparatus for measuring surface configuration
DE10120730B4 (de) * 2001-04-27 2006-08-24 Schott Ag Verfahren und Vorrichtung zur Messung der Phasengrenze
US6656749B1 (en) * 2001-12-13 2003-12-02 Advanced Micro Devices, Inc. In-situ monitoring during laser thermal annealing
KR100541052B1 (ko) * 2003-09-22 2006-01-11 삼성전자주식회사 자유 캐리어의 생성 기술을 사용하여 반도체 물질을레이저 열처리하는 공정
JP5279260B2 (ja) * 2007-12-27 2013-09-04 株式会社半導体エネルギー研究所 半導体層の評価方法
JP4948629B2 (ja) * 2010-07-20 2012-06-06 ウシオ電機株式会社 レーザリフトオフ方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3364087A (en) * 1964-04-27 1968-01-16 Varian Associates Method of using laser to coat or etch substrate
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
US3716844A (en) * 1970-07-29 1973-02-13 Ibm Image recording on tetrahedrally coordinated amorphous films
US4021675A (en) * 1973-02-20 1977-05-03 Hughes Aircraft Company System for controlling ion implantation dosage in electronic materials
DE2449688C3 (de) * 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper
US4082958A (en) * 1975-11-28 1978-04-04 Simulation Physics, Inc. Apparatus involving pulsed electron beam processing of semiconductor devices

Also Published As

Publication number Publication date
JPS55500615A (enExample) 1980-09-04
WO1980000509A1 (en) 1980-03-20
NL7920078A (nl) 1980-06-30
FR2434483A1 (fr) 1980-03-21
FR2434483B1 (enExample) 1983-05-13
GB2040077A (en) 1980-08-20
GB2040077B (en) 1983-05-18
US4155779A (en) 1979-05-22

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CA1118114A (en) Control techniques for annealing semiconductors
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