CA1102012A - Semiconductor device, in particular integrated monolithic circuit, and method of manufacturing same - Google Patents

Semiconductor device, in particular integrated monolithic circuit, and method of manufacturing same

Info

Publication number
CA1102012A
CA1102012A CA117,581A CA117581A CA1102012A CA 1102012 A CA1102012 A CA 1102012A CA 117581 A CA117581 A CA 117581A CA 1102012 A CA1102012 A CA 1102012A
Authority
CA
Canada
Prior art keywords
layer
epitaxial
semiconductor
substrate
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA117,581A
Other languages
English (en)
French (fr)
Other versions
CA117581S (en
Inventor
Else Kooi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NLAANVRAGE7010204,A external-priority patent/NL170902C/xx
Priority claimed from NLAANVRAGE7010205,A external-priority patent/NL169936C/xx
Priority claimed from NL7010208A external-priority patent/NL7010208A/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1102012A publication Critical patent/CA1102012A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/61—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H10W10/00—
    • H10W10/01—
    • H10W10/012—
    • H10W10/0121—
    • H10W10/0126—
    • H10W10/13—
    • H10W15/00—
    • H10W15/01—

Landscapes

  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
CA117,581A 1970-07-10 1971-07-07 Semiconductor device, in particular integrated monolithic circuit, and method of manufacturing same Expired CA1102012A (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
NL7010204 1970-07-10
NLAANVRAGE7010204,A NL170902C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.
NL7010205 1970-07-10
NL7010208 1970-07-10
NLAANVRAGE7010205,A NL169936C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.
NL7010208A NL7010208A (OSRAM) 1966-10-05 1970-07-10

Publications (1)

Publication Number Publication Date
CA1102012A true CA1102012A (en) 1981-05-26

Family

ID=27351584

Family Applications (1)

Application Number Title Priority Date Filing Date
CA117,581A Expired CA1102012A (en) 1970-07-10 1971-07-07 Semiconductor device, in particular integrated monolithic circuit, and method of manufacturing same

Country Status (9)

Country Link
JP (1) JPS517550B1 (OSRAM)
BE (1) BE769735A (OSRAM)
CA (1) CA1102012A (OSRAM)
CH (1) CH533364A (OSRAM)
DE (1) DE2133982C2 (OSRAM)
ES (2) ES393040A1 (OSRAM)
GB (1) GB1353997A (OSRAM)
HK (1) HK58576A (OSRAM)
SE (1) SE368480B (OSRAM)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1095413A (OSRAM) * 1964-12-24

Also Published As

Publication number Publication date
HK58576A (en) 1976-10-01
BE769735A (fr) 1972-01-10
ES393040A1 (es) 1974-05-16
DE2133982C2 (de) 1984-12-13
JPS517550B1 (OSRAM) 1976-03-09
DE2133982A1 (de) 1972-01-13
CH533364A (de) 1973-01-31
SE368480B (OSRAM) 1974-07-01
ES393041A1 (es) 1975-05-16
GB1353997A (en) 1974-05-22

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Legal Events

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