CA1080355A - Double split-electrode for charge transfer device - Google Patents
Double split-electrode for charge transfer deviceInfo
- Publication number
- CA1080355A CA1080355A CA268,093A CA268093A CA1080355A CA 1080355 A CA1080355 A CA 1080355A CA 268093 A CA268093 A CA 268093A CA 1080355 A CA1080355 A CA 1080355A
- Authority
- CA
- Canada
- Prior art keywords
- charge
- split
- beneath
- electrode
- segments
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H15/00—Transversal filters
- H03H15/02—Transversal filters using analogue shift registers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/30—Time-delay networks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
- H10D44/478—Four-phase CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Filters That Use Time-Delay Elements (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA268,093A CA1080355A (en) | 1976-12-17 | 1976-12-17 | Double split-electrode for charge transfer device |
| GB47087/77A GB1552545A (en) | 1976-12-17 | 1977-11-11 | Double split-electrode for charge transfer device |
| NL7712907A NL7712907A (nl) | 1976-12-17 | 1977-11-23 | Ladingsoverdraagorgaan. |
| DE19772755493 DE2755493A1 (de) | 1976-12-17 | 1977-12-13 | Ladungsuebertragungsanordnung mit doppelspalt-elektrode |
| FR7737543A FR2374741A1 (fr) | 1976-12-17 | 1977-12-13 | Electrode a double fente pour dispositif a transfert de charges |
| JP14999577A JPS5375878A (en) | 1976-12-17 | 1977-12-15 | Double strip electrode for charge transfer device |
| SE7714368A SE415615B (sv) | 1976-12-17 | 1977-12-16 | Laddningsoverforande anordning |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA268,093A CA1080355A (en) | 1976-12-17 | 1976-12-17 | Double split-electrode for charge transfer device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1080355A true CA1080355A (en) | 1980-06-24 |
Family
ID=4107524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA268,093A Expired CA1080355A (en) | 1976-12-17 | 1976-12-17 | Double split-electrode for charge transfer device |
Country Status (7)
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2453470A1 (fr) * | 1979-04-06 | 1980-10-31 | Thomson Csf | Dispositif de lecture et d'injection de charges electriques et application d'un tel dispositif |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3819958A (en) * | 1972-11-03 | 1974-06-25 | Texas Instruments Inc | Charge transfer device analog matched filter |
| FR2302636A1 (fr) * | 1975-02-28 | 1976-09-24 | Thomson Csf | Procede de filtrage de signaux analogiqu |
-
1976
- 1976-12-17 CA CA268,093A patent/CA1080355A/en not_active Expired
-
1977
- 1977-11-11 GB GB47087/77A patent/GB1552545A/en not_active Expired
- 1977-11-23 NL NL7712907A patent/NL7712907A/xx not_active Application Discontinuation
- 1977-12-13 DE DE19772755493 patent/DE2755493A1/de not_active Ceased
- 1977-12-13 FR FR7737543A patent/FR2374741A1/fr active Granted
- 1977-12-15 JP JP14999577A patent/JPS5375878A/ja active Granted
- 1977-12-16 SE SE7714368A patent/SE415615B/sv unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6135722B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-08-14 |
| FR2374741B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1983-01-28 |
| NL7712907A (nl) | 1978-06-20 |
| GB1552545A (en) | 1979-09-12 |
| SE7714368L (sv) | 1978-06-18 |
| DE2755493A1 (de) | 1978-06-22 |
| SE415615B (sv) | 1980-10-13 |
| FR2374741A1 (fr) | 1978-07-13 |
| JPS5375878A (en) | 1978-07-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |