CA1080355A - Electrode a double fente pour dispositif a transfert de charge - Google Patents
Electrode a double fente pour dispositif a transfert de chargeInfo
- Publication number
- CA1080355A CA1080355A CA268,093A CA268093A CA1080355A CA 1080355 A CA1080355 A CA 1080355A CA 268093 A CA268093 A CA 268093A CA 1080355 A CA1080355 A CA 1080355A
- Authority
- CA
- Canada
- Prior art keywords
- charge
- split
- beneath
- electrode
- segments
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76891—Four-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H15/00—Transversal filters
- H03H15/02—Transversal filters using analogue shift registers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/30—Time-delay networks
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Acoustics & Sound (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Filters That Use Time-Delay Elements (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA268,093A CA1080355A (fr) | 1976-12-17 | 1976-12-17 | Electrode a double fente pour dispositif a transfert de charge |
| GB47087/77A GB1552545A (en) | 1976-12-17 | 1977-11-11 | Double split-electrode for charge transfer device |
| NL7712907A NL7712907A (nl) | 1976-12-17 | 1977-11-23 | Ladingsoverdraagorgaan. |
| DE19772755493 DE2755493A1 (de) | 1976-12-17 | 1977-12-13 | Ladungsuebertragungsanordnung mit doppelspalt-elektrode |
| FR7737543A FR2374741A1 (fr) | 1976-12-17 | 1977-12-13 | Electrode a double fente pour dispositif a transfert de charges |
| JP14999577A JPS5375878A (en) | 1976-12-17 | 1977-12-15 | Double strip electrode for charge transfer device |
| SE7714368A SE415615B (sv) | 1976-12-17 | 1977-12-16 | Laddningsoverforande anordning |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA268,093A CA1080355A (fr) | 1976-12-17 | 1976-12-17 | Electrode a double fente pour dispositif a transfert de charge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1080355A true CA1080355A (fr) | 1980-06-24 |
Family
ID=4107524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA268,093A Expired CA1080355A (fr) | 1976-12-17 | 1976-12-17 | Electrode a double fente pour dispositif a transfert de charge |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5375878A (fr) |
| CA (1) | CA1080355A (fr) |
| DE (1) | DE2755493A1 (fr) |
| FR (1) | FR2374741A1 (fr) |
| GB (1) | GB1552545A (fr) |
| NL (1) | NL7712907A (fr) |
| SE (1) | SE415615B (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2453470A1 (fr) * | 1979-04-06 | 1980-10-31 | Thomson Csf | Dispositif de lecture et d'injection de charges electriques et application d'un tel dispositif |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3819958A (en) * | 1972-11-03 | 1974-06-25 | Texas Instruments Inc | Charge transfer device analog matched filter |
| FR2302636A1 (fr) * | 1975-02-28 | 1976-09-24 | Thomson Csf | Procede de filtrage de signaux analogiqu |
-
1976
- 1976-12-17 CA CA268,093A patent/CA1080355A/fr not_active Expired
-
1977
- 1977-11-11 GB GB47087/77A patent/GB1552545A/en not_active Expired
- 1977-11-23 NL NL7712907A patent/NL7712907A/xx not_active Application Discontinuation
- 1977-12-13 DE DE19772755493 patent/DE2755493A1/de not_active Ceased
- 1977-12-13 FR FR7737543A patent/FR2374741A1/fr active Granted
- 1977-12-15 JP JP14999577A patent/JPS5375878A/ja active Granted
- 1977-12-16 SE SE7714368A patent/SE415615B/sv unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2755493A1 (de) | 1978-06-22 |
| SE7714368L (sv) | 1978-06-18 |
| FR2374741A1 (fr) | 1978-07-13 |
| FR2374741B1 (fr) | 1983-01-28 |
| SE415615B (sv) | 1980-10-13 |
| GB1552545A (en) | 1979-09-12 |
| JPS5375878A (en) | 1978-07-05 |
| NL7712907A (nl) | 1978-06-20 |
| JPS6135722B2 (fr) | 1986-08-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH01166561A (ja) | 電荷転送装置 | |
| EP0192142A1 (fr) | Dispositif à couplage de charges | |
| US4099197A (en) | Complementary input structure for charge coupled device | |
| US3902186A (en) | Surface charge transistor devices | |
| US4639940A (en) | Charge coupled device with meander channel and elongated, straight, parallel gate electrodes | |
| US4086609A (en) | Double split-electrode for charge transfer device | |
| US4179793A (en) | Method of making a charge transfer device | |
| US4064524A (en) | Two-phase charge transfer device image sensor | |
| US4040077A (en) | Time-independent ccd charge amplifier | |
| GB1377521A (en) | Charge coupled circuits | |
| US4757365A (en) | CCD image sensor with substantially identical integration regions | |
| CA1080355A (fr) | Electrode a double fente pour dispositif a transfert de charge | |
| US4132903A (en) | CCD output circuit using thin film transistor | |
| US6111279A (en) | CCD type solid state image pick-up device | |
| US4156858A (en) | Charge transfer transversal filter | |
| US4196389A (en) | Test site for a charged coupled device (CCD) array | |
| JPH0728031B2 (ja) | 電荷転送装置 | |
| JPH06120262A (ja) | 電荷転送装置 | |
| JPH08255897A (ja) | 電荷移動特性の改善方法及び改善された出力領域を有する画像センサ | |
| US5796801A (en) | Charge coupled device with high charge transfer efficiency | |
| US3987475A (en) | Nondestructive charge sensing in a charge coupled device | |
| JP2888266B2 (ja) | 電荷転送装置 | |
| CA1076700A (fr) | Entree a structure complementaire pour dispositif a transfert de charge | |
| EP0073019A2 (fr) | Dispositif à mémoire et son procédé de fabrication | |
| JPH0353775B2 (fr) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |