CA1077161A - Photo-voltaic power generating means and methods - Google Patents

Photo-voltaic power generating means and methods

Info

Publication number
CA1077161A
CA1077161A CA280,011A CA280011A CA1077161A CA 1077161 A CA1077161 A CA 1077161A CA 280011 A CA280011 A CA 280011A CA 1077161 A CA1077161 A CA 1077161A
Authority
CA
Canada
Prior art keywords
type
layer
cadmium
cathode
cadmium telluride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA280,011A
Other languages
English (en)
French (fr)
Inventor
Ferdinand A. Kroger
M.P. Ramachandra Panicker
Robert L. Rod
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monosolar Inc
Original Assignee
Monosolar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monosolar Inc filed Critical Monosolar Inc
Application granted granted Critical
Publication of CA1077161A publication Critical patent/CA1077161A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
CA280,011A 1976-06-08 1977-06-07 Photo-voltaic power generating means and methods Expired CA1077161A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69389076A 1976-06-08 1976-06-08

Publications (1)

Publication Number Publication Date
CA1077161A true CA1077161A (en) 1980-05-06

Family

ID=24786541

Family Applications (1)

Application Number Title Priority Date Filing Date
CA280,011A Expired CA1077161A (en) 1976-06-08 1977-06-07 Photo-voltaic power generating means and methods

Country Status (11)

Country Link
JP (1) JPS5310989A (xx)
AU (1) AU513645B2 (xx)
BE (1) BE855499A (xx)
CA (1) CA1077161A (xx)
DE (1) DE2726009A1 (xx)
FR (1) FR2354131A1 (xx)
GB (1) GB1532616A (xx)
IL (1) IL52216A (xx)
IT (1) IT1080884B (xx)
MX (1) MX145655A (xx)
NL (1) NL186611C (xx)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
EP0060487B1 (en) * 1981-03-16 1988-06-01 Sohio Commercial Development Co. Plugged pinhole thin film and method of making same
CN102439467A (zh) * 2009-04-30 2012-05-02 卢森堡大学 大面积半导体器件的电气及光电子表征

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2810605C2 (de) * 1978-03-11 1980-03-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrolytisches Abscheideverfahren zur Herstellung von großflächigen Halbleiterbauelementen
US4192721A (en) * 1979-04-24 1980-03-11 Baranski Andrzej S Method for producing a smooth coherent film of a metal chalconide
US4260427A (en) * 1979-06-18 1981-04-07 Ametek, Inc. CdTe Schottky barrier photovoltaic cell
IL57908A0 (en) * 1979-07-07 1979-11-30 Yeda Res & Dev Photovoltaic materials
US4253919A (en) * 1980-01-21 1981-03-03 The International Nickel Company, Inc. Electrodeposition of cadmium-selenium semiconducting photoelectrodes from an acid citrate bath
US4261802A (en) * 1980-02-21 1981-04-14 Ametek, Inc. Method of making a photovoltaic cell
US4256544A (en) * 1980-04-04 1981-03-17 Bell Telephone Laboratories, Incorporated Method of making metal-chalcogenide photosensitive devices
JPS5714574A (en) * 1980-06-27 1982-01-25 Otsuka Pharmaceut Co Ltd Carbostyril derivative
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition
US4548681A (en) * 1984-02-03 1985-10-22 The Standard Oil Company (Ohio) Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te
US4611091A (en) * 1984-12-06 1986-09-09 Atlantic Richfield Company CuInSe2 thin film solar cell with thin CdS and transparent window layer
JPS61202478A (ja) * 1985-03-05 1986-09-08 Agency Of Ind Science & Technol 光起電力素子の製造方法
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell
US4977097A (en) * 1986-10-21 1990-12-11 Ametek, Inc. Method of making heterojunction P-I-N photovoltaic cell
US5319377A (en) * 1992-04-07 1994-06-07 Hughes Aircraft Company Wideband arrayable planar radiator
DE29706857U1 (de) * 1997-04-16 1997-12-11 Gauss, Edmund, 40668 Meerbusch Stromerzeugungseinheit, u.a. bestehend aus Elektronenüberschuß erzeugender Farbe oder Folie und Stromspeicher

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3051636A (en) * 1960-03-30 1962-08-28 Minnesota Mining & Mfg Electrolytic preparation of cadmium salts
US3419484A (en) * 1966-03-23 1968-12-31 Chrysler Corp Electrolytic preparation of semiconductor compounds
NL6618449A (xx) * 1966-12-12 1968-07-01
US3573177A (en) * 1968-01-11 1971-03-30 Us Army Electrochemical methods for production of films and coatings of semiconductors
JPS50115486A (xx) * 1974-02-20 1975-09-10
US3887446A (en) * 1974-07-26 1975-06-03 Us Navy Electrochemical preparation of metallic tellurides
JPS5138888A (en) * 1974-09-27 1976-03-31 Matsushita Electric Ind Co Ltd Handotaisoshino seizohoho

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
EP0060487B1 (en) * 1981-03-16 1988-06-01 Sohio Commercial Development Co. Plugged pinhole thin film and method of making same
CN102439467A (zh) * 2009-04-30 2012-05-02 卢森堡大学 大面积半导体器件的电气及光电子表征
CN102439467B (zh) * 2009-04-30 2016-02-17 卢森堡大学 大面积半导体器件的电气及光电子表征

Also Published As

Publication number Publication date
AU513645B2 (en) 1980-12-11
FR2354131A1 (fr) 1978-01-06
FR2354131B1 (xx) 1983-01-21
NL7706280A (nl) 1977-12-12
DE2726009A1 (de) 1977-12-29
NL186611C (nl) 1991-01-02
MX145655A (es) 1982-03-19
JPS6132831B2 (xx) 1986-07-29
BE855499A (fr) 1977-10-03
NL186611B (nl) 1990-08-01
GB1532616A (en) 1978-11-15
IL52216A (en) 1980-01-31
IL52216A0 (en) 1977-08-31
IT1080884B (it) 1985-05-16
JPS5310989A (en) 1978-01-31
AU2594777A (en) 1978-12-14

Similar Documents

Publication Publication Date Title
US4400244A (en) Photo-voltaic power generating means and methods
CA1077161A (en) Photo-voltaic power generating means and methods
Rajeshwar et al. Energy conversion in photoelectrochemical systems—a review
Ennaoui et al. Photoelectrochemical energy conversion obtained with ultrathin organo‐metallic‐chemical‐vapor‐deposition layer of FeS2 (pyrite) on TiO2
US4536607A (en) Photovoltaic tandem cell
US4239553A (en) Thin film photovoltaic cells having increased durability and operating life and method for making same
US4267398A (en) Thin film photovoltaic cells
US4436558A (en) Electrochemical photovoltaic cell having ternary alloy film
Kampmann et al. Investigation of the influence of the electrodeposition potential on the optical, photoelectrochemical and structural properties of as-deposited CdTe
Hodes et al. Electroplated cadmium chalcogenide layers: Characterization and use in photoelectrochemical solar cells
CA1249361A (en) Electrodeposition of photovoltaic layer utilizing cadmium rich hg1-xcdxte
US4425194A (en) Photo-voltaic power generating means and methods
US4492811A (en) Heterojunction photovoltaic device
US20110284078A1 (en) Method of forming cadmium telluride thin film
Neumann‐Spallart et al. Photoelectrochemical properties of semiconducting cadmium mercury telluride thin films with bandgaps between 1.47 and 1.08 eV
CA1237510A (en) Liquid junction photoelectrodes using amorphous silicon-based thin film semiconductor
Ang et al. Photoelectrochemical systems with energy storage
US4608750A (en) Preparation of photovoltaic device by electrochemical deposition
CA1292547C (en) Electrodeposited doped ii-vi semiconductor films and devices incorporating such films
Suntola CdTe thin-film solar cells
US4632736A (en) Electrolytic preparation of tin
US4644638A (en) Photovoltaic device prepared by electroless deposition
Muftah et al. Electrodeposited CdTe Thin Film Solar Cells: Chloride Treatment and Improved Efficiency
Ramrakhiani Zinc doped polycrystalline CdSe films for solar energy conversion
Khudruj CdS thin film photo-Electrochemical electrodes: Combined Electrochemical and chemical bath depositions

Legal Events

Date Code Title Description
MKEX Expiry