CA1073998A - Double heterostructure laser for direct coupling to an optical fibre - Google Patents

Double heterostructure laser for direct coupling to an optical fibre

Info

Publication number
CA1073998A
CA1073998A CA281,897A CA281897A CA1073998A CA 1073998 A CA1073998 A CA 1073998A CA 281897 A CA281897 A CA 281897A CA 1073998 A CA1073998 A CA 1073998A
Authority
CA
Canada
Prior art keywords
layer
confining
substrate
laser
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA281,897A
Other languages
English (en)
French (fr)
Inventor
Anthony J. Springthorpe
John C. Dyment
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Priority to CA281,897A priority Critical patent/CA1073998A/en
Priority to GB15006/78A priority patent/GB1568465A/en
Priority to DE19782820646 priority patent/DE2820646A1/de
Priority to JP6787578A priority patent/JPS5414693A/ja
Priority to NL7806634A priority patent/NL7806634A/xx
Application granted granted Critical
Publication of CA1073998A publication Critical patent/CA1073998A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Optical Couplings Of Light Guides (AREA)
CA281,897A 1977-07-04 1977-07-04 Double heterostructure laser for direct coupling to an optical fibre Expired CA1073998A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CA281,897A CA1073998A (en) 1977-07-04 1977-07-04 Double heterostructure laser for direct coupling to an optical fibre
GB15006/78A GB1568465A (en) 1977-07-04 1978-04-17 Double heterostructure laser for direct coupling to an optical fibre
DE19782820646 DE2820646A1 (de) 1977-07-04 1978-05-11 Zur direkten ankopplung an eine lichtleitfaser geeigneter laser mit doppel-heterostruktur
JP6787578A JPS5414693A (en) 1977-07-04 1978-06-07 Double heteroostructure laser for coupling with optical fiber
NL7806634A NL7806634A (nl) 1977-07-04 1978-06-20 Halfgeleiderkristal-laser.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA281,897A CA1073998A (en) 1977-07-04 1977-07-04 Double heterostructure laser for direct coupling to an optical fibre

Publications (1)

Publication Number Publication Date
CA1073998A true CA1073998A (en) 1980-03-18

Family

ID=4109040

Family Applications (1)

Application Number Title Priority Date Filing Date
CA281,897A Expired CA1073998A (en) 1977-07-04 1977-07-04 Double heterostructure laser for direct coupling to an optical fibre

Country Status (5)

Country Link
JP (1) JPS5414693A (de)
CA (1) CA1073998A (de)
DE (1) DE2820646A1 (de)
GB (1) GB1568465A (de)
NL (1) NL7806634A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016626Y2 (ja) * 1981-03-12 1985-05-23 日立造船株式会社 粉粒体容器の吊具
DE3138704A1 (de) * 1981-09-29 1983-04-21 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von laserdioden-resonatorspiegeln
JPS5934678A (ja) * 1982-08-20 1984-02-25 Dainippon Screen Mfg Co Ltd 半導体発光装置
JPS6057990A (ja) * 1983-09-09 1985-04-03 Matsushita Electric Ind Co Ltd 半導体レ−ザ
DE19519059A1 (de) * 1995-05-24 1996-11-28 Bosch Gmbh Robert Anordnung zur Ankopplung eines Lasers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5067597A (de) * 1973-10-15 1975-06-06
JPS5171687A (ja) * 1974-12-18 1976-06-21 Matsushita Electric Ind Co Ltd Handotaireezanoseizohoho
US3996492A (en) * 1975-05-28 1976-12-07 International Business Machines Corporation Two-dimensional integrated injection laser array

Also Published As

Publication number Publication date
JPS5414693A (en) 1979-02-03
DE2820646A1 (de) 1979-01-25
NL7806634A (nl) 1979-01-08
GB1568465A (en) 1980-05-29

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Legal Events

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