CA1070806A - Solid state image sensing device - Google Patents
Solid state image sensing deviceInfo
- Publication number
- CA1070806A CA1070806A CA261,989A CA261989A CA1070806A CA 1070806 A CA1070806 A CA 1070806A CA 261989 A CA261989 A CA 261989A CA 1070806 A CA1070806 A CA 1070806A
- Authority
- CA
- Canada
- Prior art keywords
- electrode
- solid state
- state image
- insulating layer
- channel stopper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 235000012239 silicon dioxide Nutrition 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 12
- 229910052681 coesite Inorganic materials 0.000 description 10
- 229910052906 cristobalite Inorganic materials 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229910052682 stishovite Inorganic materials 0.000 description 10
- 229910052905 tridymite Inorganic materials 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 206010010099 Combined immunodeficiency Diseases 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001444 catalytic combustion detection Methods 0.000 description 2
- 238000001360 collision-induced dissociation Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- AMHIJMKZPBMCKI-PKLGAXGESA-N ctds Chemical group O[C@@H]1[C@@H](OS(O)(=O)=O)[C@@H]2O[C@H](COS(O)(=O)=O)[C@H]1O[C@H]([C@@H]([C@H]1OS(O)(=O)=O)OS(O)(=O)=O)O[C@H](CO)[C@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O2 AMHIJMKZPBMCKI-PKLGAXGESA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76875—Two-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50115778A JPS5239311A (en) | 1975-09-25 | 1975-09-25 | Solid state pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1070806A true CA1070806A (en) | 1980-01-29 |
Family
ID=14670811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA261,989A Expired CA1070806A (en) | 1975-09-25 | 1976-09-24 | Solid state image sensing device |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5239311A (nl) |
| CA (1) | CA1070806A (nl) |
| DE (1) | DE2643446A1 (nl) |
| FR (1) | FR2326042A1 (nl) |
| GB (1) | GB1545597A (nl) |
| NL (1) | NL7610700A (nl) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS538016A (en) * | 1976-07-09 | 1978-01-25 | Fujitsu Ltd | Electric charge transfer unit |
| JPS5474624A (en) * | 1977-11-28 | 1979-06-14 | Matsushita Electronics Corp | Solidstate pick up unit |
| JPS54127620A (en) * | 1978-03-27 | 1979-10-03 | Matsushita Electronics Corp | Solid state pickup device |
| NL187288C (nl) * | 1980-02-19 | 1991-08-01 | Philips Nv | Ladingsgekoppelde beeldopneeminrichting en werkwijze ter vervaardiging daarvan. |
| DE102012109129B4 (de) * | 2011-09-27 | 2017-06-29 | Heptagon Micro Optics Pte. Ltd. | Sensor-Pixelanordnung und getrennte Anordnung einer Speicherung und Akkumulation mit parallelem Erfassen und Auslesen |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IE35581B1 (en) * | 1970-09-04 | 1976-03-31 | Gen Electric | Semiconductor apparatus for selectively moving electrical charges |
-
1975
- 1975-09-25 JP JP50115778A patent/JPS5239311A/ja active Granted
-
1976
- 1976-09-24 CA CA261,989A patent/CA1070806A/en not_active Expired
- 1976-09-24 GB GB39772/76A patent/GB1545597A/en not_active Expired
- 1976-09-27 NL NL7610700A patent/NL7610700A/nl not_active Application Discontinuation
- 1976-09-27 DE DE19762643446 patent/DE2643446A1/de active Granted
- 1976-09-27 FR FR7629020A patent/FR2326042A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB1545597A (en) | 1979-05-10 |
| DE2643446C2 (nl) | 1987-10-22 |
| JPS5732548B2 (nl) | 1982-07-12 |
| FR2326042B1 (nl) | 1983-01-07 |
| DE2643446A1 (de) | 1977-04-14 |
| JPS5239311A (en) | 1977-03-26 |
| FR2326042A1 (fr) | 1977-04-22 |
| NL7610700A (nl) | 1977-03-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |