CA1070029A - Methods for forming semiconductor waveguide devices - Google Patents
Methods for forming semiconductor waveguide devicesInfo
- Publication number
- CA1070029A CA1070029A CA267,912A CA267912A CA1070029A CA 1070029 A CA1070029 A CA 1070029A CA 267912 A CA267912 A CA 267912A CA 1070029 A CA1070029 A CA 1070029A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- groove
- refractive index
- growth
- higher refractive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000004943 liquid phase epitaxy Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 230000000875 corresponding effect Effects 0.000 claims 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000155 melt Substances 0.000 description 11
- 239000011149 active material Substances 0.000 description 10
- 238000000407 epitaxy Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000010276 construction Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5249075A GB1530323A (en) | 1975-12-22 | 1975-12-22 | Semiconductor waveguide structures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1070029A true CA1070029A (en) | 1980-01-15 |
Family
ID=10464116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA267,912A Expired CA1070029A (en) | 1975-12-22 | 1976-12-15 | Methods for forming semiconductor waveguide devices |
Country Status (6)
| Country | Link |
|---|---|
| AU (1) | AU500265B2 (enExample) |
| CA (1) | CA1070029A (enExample) |
| CH (1) | CH609488A5 (enExample) |
| DE (1) | DE2656532A1 (enExample) |
| FR (1) | FR2336797A1 (enExample) |
| GB (1) | GB1530323A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4166253A (en) * | 1977-08-15 | 1979-08-28 | International Business Machines Corporation | Heterostructure diode injection laser having a constricted active region |
| CA1127282A (en) * | 1978-05-22 | 1982-07-06 | Takashi Sugino | Semiconductor laser and method of making the same |
| JPS5522807A (en) * | 1978-06-30 | 1980-02-18 | Hitachi Ltd | Semiconductor laser element and manufacturing of the same |
| GB2029083B (en) * | 1978-08-18 | 1982-08-11 | Standard Telephones Cables Ltd | Semiconductor waveguide devices |
| GB2046983B (en) * | 1979-01-18 | 1983-03-16 | Nippon Electric Co | Semiconductor lasers |
| GB2123604B (en) * | 1982-06-29 | 1985-12-18 | Standard Telephones Cables Ltd | Injection laser manufacture |
| FR2548220B1 (fr) * | 1983-07-01 | 1987-07-31 | Labo Electronique Physique | Guide d'onde lumineuse sur materiau semi-conducteur |
| WO1995005616A1 (en) * | 1993-08-13 | 1995-02-23 | Telstra Corporation Limited | A method of forming an optical waveguide device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1065460A (en) * | 1975-06-23 | 1979-10-30 | Robert D. Burnham | Buried-heterostructure diode injection laser |
-
1975
- 1975-12-22 GB GB5249075A patent/GB1530323A/en not_active Expired
-
1976
- 1976-12-07 AU AU20316/76A patent/AU500265B2/en not_active Expired
- 1976-12-14 DE DE19762656532 patent/DE2656532A1/de not_active Withdrawn
- 1976-12-15 CA CA267,912A patent/CA1070029A/en not_active Expired
- 1976-12-17 CH CH1589176A patent/CH609488A5/xx not_active IP Right Cessation
- 1976-12-22 FR FR7638714A patent/FR2336797A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| AU500265B2 (en) | 1979-05-17 |
| FR2336797A1 (fr) | 1977-07-22 |
| FR2336797B1 (enExample) | 1982-05-21 |
| DE2656532A1 (de) | 1977-07-07 |
| AU2031676A (en) | 1978-06-15 |
| GB1530323A (en) | 1978-10-25 |
| CH609488A5 (en) | 1979-02-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |