CA1060587A - Electrical circuit logic elements - Google Patents
Electrical circuit logic elementsInfo
- Publication number
- CA1060587A CA1060587A CA253,926A CA253926A CA1060587A CA 1060587 A CA1060587 A CA 1060587A CA 253926 A CA253926 A CA 253926A CA 1060587 A CA1060587 A CA 1060587A
- Authority
- CA
- Canada
- Prior art keywords
- schottky
- terminal
- schottky diode
- diodes
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005468 ion implantation Methods 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/12—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using diode rectifiers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2524579A DE2524579C3 (de) | 1975-06-03 | 1975-06-03 | Halbleiter-Logikglied |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1060587A true CA1060587A (en) | 1979-08-14 |
Family
ID=5948131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA253,926A Expired CA1060587A (en) | 1975-06-03 | 1976-06-02 | Electrical circuit logic elements |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT336930B (de) |
| CA (1) | CA1060587A (de) |
| CH (1) | CH610160A5 (de) |
| DE (1) | DE2524579C3 (de) |
| FR (1) | FR2313820A1 (de) |
| GB (1) | GB1551276A (de) |
| IT (1) | IT1079512B (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4156246A (en) * | 1977-05-25 | 1979-05-22 | Bell Telephone Laboratories, Incorporated | Combined ohmic and Schottky output transistors for logic circuit |
| US4347585A (en) * | 1980-06-09 | 1982-08-31 | International Business Machines Corporation | Reproduce only storage matrix |
| US4415817A (en) * | 1981-10-08 | 1983-11-15 | Signetics Corporation | Bipolar logic gate including circuitry to prevent turn-off and deep saturation of pull-down transistor |
| NL8300843A (nl) * | 1983-03-09 | 1984-10-01 | Philips Nv | Geintegreerde logische schakeling. |
-
1975
- 1975-06-03 DE DE2524579A patent/DE2524579C3/de not_active Expired
- 1975-08-08 AT AT618375A patent/AT336930B/de not_active IP Right Cessation
-
1976
- 1976-04-12 CH CH461076A patent/CH610160A5/xx not_active IP Right Cessation
- 1976-05-11 GB GB19306/76A patent/GB1551276A/en not_active Expired
- 1976-05-26 IT IT23666/76A patent/IT1079512B/it active
- 1976-05-28 FR FR7616222A patent/FR2313820A1/fr active Granted
- 1976-06-02 CA CA253,926A patent/CA1060587A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2524579A1 (de) | 1976-12-23 |
| GB1551276A (en) | 1979-08-30 |
| FR2313820A1 (fr) | 1976-12-31 |
| DE2524579C3 (de) | 1980-11-27 |
| CH610160A5 (en) | 1979-03-30 |
| DE2524579B2 (de) | 1980-03-27 |
| ATA618375A (de) | 1976-09-15 |
| FR2313820B1 (de) | 1982-09-03 |
| IT1079512B (it) | 1985-05-13 |
| AT336930B (de) | 1977-06-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4994886A (en) | Composite MOS transistor and application to a free-wheel diode | |
| US4101922A (en) | Field effect transistor with a short channel length | |
| JPS60103660A (ja) | 半導体基板の基板電圧発生装置 | |
| US3476989A (en) | Controlled rectifier semiconductor device | |
| GB2073490A (en) | Complementary field-effect transistor integrated circuit device | |
| JPH0793383B2 (ja) | 半導体装置 | |
| US4296428A (en) | Merged field effect transistor circuit and fabrication process | |
| JPS59215767A (ja) | オン抵抗の低い絶縁ゲ−ト半導体デバイス | |
| US6355513B1 (en) | Asymmetric depletion region for normally off JFET | |
| HK79493A (en) | Integrated circuit of the complementary technique having a substrate bias generator | |
| CA1111514A (en) | Multidrain metal-oxide-semiconductor field-effect device | |
| CA1060587A (en) | Electrical circuit logic elements | |
| EP0065346A2 (de) | Halbleiter-Schaltungsanordnung | |
| US4471372A (en) | FET Controlled Triac | |
| US3638081A (en) | Integrated circuit having lightly doped expitaxial collector layer surrounding base and emitter elements and heavily doped buried collector larger in contact with the base element | |
| US4602170A (en) | Resistive gate field effect transistor logic family | |
| US4063273A (en) | Fundamental logic circuit | |
| KR100196734B1 (ko) | 큰 기판 접촉 영역을 갖는 반도체 장치 | |
| US4641163A (en) | MIS-field effect transistor with charge carrier injection | |
| US4163241A (en) | Multiple emitter and normal gate semiconductor switch | |
| JPS5753944A (en) | Semiconductor integrated circuit | |
| US4175240A (en) | Integrated logic circuit with a current source made as a field-effect transistor | |
| US4952998A (en) | Integrated circuit with complementary MOS transistors | |
| JPH0291975A (ja) | 半導体装置 | |
| JP2780289B2 (ja) | 半導体装置 |