CA1055816A - Method of producing sodium beta-alumina single crystals - Google Patents
Method of producing sodium beta-alumina single crystalsInfo
- Publication number
- CA1055816A CA1055816A CA232,155A CA232155A CA1055816A CA 1055816 A CA1055816 A CA 1055816A CA 232155 A CA232155 A CA 232155A CA 1055816 A CA1055816 A CA 1055816A
- Authority
- CA
- Canada
- Prior art keywords
- alumina
- melt
- sodium beta
- single crystals
- na2o
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Secondary Cells (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US492279A US3917462A (en) | 1974-07-26 | 1974-07-26 | Method of producing sodium beta-alumina single crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1055816A true CA1055816A (en) | 1979-06-05 |
Family
ID=23955664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA232,155A Expired CA1055816A (en) | 1974-07-26 | 1975-07-24 | Method of producing sodium beta-alumina single crystals |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3917462A (enExample) |
| JP (1) | JPS5137900A (enExample) |
| CA (1) | CA1055816A (enExample) |
| FR (1) | FR2279461A1 (enExample) |
| GB (1) | GB1516327A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4286025A (en) * | 1979-03-12 | 1981-08-25 | Grant Zigurd A | Detector for thermoluminescence dosimetry |
| US4792377A (en) * | 1987-02-09 | 1988-12-20 | The Regents Of The University Of California | Flux growth of sodium beta" alumina |
| US4797269A (en) * | 1988-02-08 | 1989-01-10 | Norton Company | Production of beta alumina by seeding and beta alumina produced thereby |
| US5415127A (en) * | 1993-07-07 | 1995-05-16 | Ontario Centre For Materials Research | Method of forming a single crystal film of sodium-beta "-alumina |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1769635A1 (de) * | 1968-06-20 | 1972-03-30 | Siemens Ag | Duenne Halbleiter-Aufwachsschicht auf tonerdearmen,tiegelgezogenem Magnesium-Aluminium-Spinell-Einkristall,sowie Verfahren zur Herstellung der Schicht und zur Herstellung der Einkristalle |
| US3595803A (en) * | 1969-09-04 | 1971-07-27 | Cortland O Dugger | Method for growing oxide single crystals |
| US3608050A (en) * | 1969-09-12 | 1971-09-21 | Union Carbide Corp | Production of single crystal sapphire by carefully controlled cooling from a melt of alumina |
| US3859427A (en) * | 1969-11-10 | 1975-01-07 | Aluminum Co Of America | Production of beta alumina |
| US3715194A (en) * | 1970-10-29 | 1973-02-06 | Union Carbide Corp | Melt grown alumina crystals and process therefor |
| US3795723A (en) * | 1972-03-29 | 1974-03-05 | Shell Oil Co | Beta alumina production |
-
1974
- 1974-07-26 US US492279A patent/US3917462A/en not_active Expired - Lifetime
-
1975
- 1975-07-24 CA CA232,155A patent/CA1055816A/en not_active Expired
- 1975-07-25 FR FR7523318A patent/FR2279461A1/fr active Granted
- 1975-07-25 JP JP50090348A patent/JPS5137900A/ja active Granted
- 1975-07-25 GB GB31141/75A patent/GB1516327A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2532653B2 (de) | 1977-03-10 |
| JPS5137900A (en) | 1976-03-30 |
| JPS5735159B2 (enExample) | 1982-07-27 |
| GB1516327A (en) | 1978-07-05 |
| FR2279461A1 (fr) | 1976-02-20 |
| DE2532653A1 (de) | 1976-02-05 |
| US3917462A (en) | 1975-11-04 |
| FR2279461B1 (enExample) | 1978-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Marley et al. | Growth of stannic oxide crystals from the vapor phase | |
| CN106498488B (zh) | 同时生长多种掺杂CaF2晶体的装置及基于该装置的制备方法 | |
| CN115142130B (zh) | 一种微下拉区熔法生长片状氧化镓晶体的方法与生长装置 | |
| EP0123809B1 (en) | Process for growing a large single crystal from multiple seed crystals | |
| US5066356A (en) | Hydrothermal process for growing optical-quality single crystals | |
| CA1055816A (en) | Method of producing sodium beta-alumina single crystals | |
| Medcalf et al. | High‐Pressure, High‐Temperature Growth of Cadmium Sulfide Crystals | |
| Boyd et al. | Vaporization‐Crystallization Method for Growing CdS Single Crystals | |
| JPS61236686A (ja) | 単結晶育成法 | |
| RU2108418C1 (ru) | Способ выращивания монокристаллов лантангаллиевого силиката | |
| US4199396A (en) | Method for producing single crystal gadolinium gallium garnet | |
| US4055457A (en) | Method for growing absorption-free alkali metal halide single crystals | |
| US4224099A (en) | Method for producing R-plane single crystal alpha alumina | |
| CA1171341A (en) | Method for producing gadolinium garnet | |
| US3899304A (en) | Process of growing crystals | |
| US4226629A (en) | Electrofusion method of producing boron aluminum oxide refractory | |
| Wood et al. | Growth stoichiometric magnesium aluminate spinel crystals by flux evaporation | |
| CN102021647A (zh) | 一种快速生长厘米量级红宝石晶体的方法 | |
| Gross | Zone purification of alkali iodides | |
| Jordan et al. | Growth of forsterite crystals in a reactive crucible | |
| Goodrum | Solution top-seeding: Growth of GeO2 polymorphs | |
| GB1565407A (en) | Method for producing single crystal gadolinium gallium | |
| CN1005159B (zh) | 二氧化碲单晶体的生长技术 | |
| Walker | Crystal growth of SrCl2 and solid solutions of SrCl2-PrCl3 and SrCl2-GdCl3 | |
| RU2189405C1 (ru) | Способ получения монокристаллов соединения liins2 |