JPS5735159B2 - - Google Patents
Info
- Publication number
- JPS5735159B2 JPS5735159B2 JP9034875A JP9034875A JPS5735159B2 JP S5735159 B2 JPS5735159 B2 JP S5735159B2 JP 9034875 A JP9034875 A JP 9034875A JP 9034875 A JP9034875 A JP 9034875A JP S5735159 B2 JPS5735159 B2 JP S5735159B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Secondary Cells (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US492279A US3917462A (en) | 1974-07-26 | 1974-07-26 | Method of producing sodium beta-alumina single crystals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5137900A JPS5137900A (en) | 1976-03-30 |
| JPS5735159B2 true JPS5735159B2 (enExample) | 1982-07-27 |
Family
ID=23955664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50090348A Granted JPS5137900A (en) | 1974-07-26 | 1975-07-25 | Natoriumubeeta aruminatanketsushono seizoho |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3917462A (enExample) |
| JP (1) | JPS5137900A (enExample) |
| CA (1) | CA1055816A (enExample) |
| FR (1) | FR2279461A1 (enExample) |
| GB (1) | GB1516327A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4286025A (en) * | 1979-03-12 | 1981-08-25 | Grant Zigurd A | Detector for thermoluminescence dosimetry |
| US4792377A (en) * | 1987-02-09 | 1988-12-20 | The Regents Of The University Of California | Flux growth of sodium beta" alumina |
| US4797269A (en) * | 1988-02-08 | 1989-01-10 | Norton Company | Production of beta alumina by seeding and beta alumina produced thereby |
| US5415127A (en) * | 1993-07-07 | 1995-05-16 | Ontario Centre For Materials Research | Method of forming a single crystal film of sodium-beta "-alumina |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1769635A1 (de) * | 1968-06-20 | 1972-03-30 | Siemens Ag | Duenne Halbleiter-Aufwachsschicht auf tonerdearmen,tiegelgezogenem Magnesium-Aluminium-Spinell-Einkristall,sowie Verfahren zur Herstellung der Schicht und zur Herstellung der Einkristalle |
| US3595803A (en) * | 1969-09-04 | 1971-07-27 | Cortland O Dugger | Method for growing oxide single crystals |
| US3608050A (en) * | 1969-09-12 | 1971-09-21 | Union Carbide Corp | Production of single crystal sapphire by carefully controlled cooling from a melt of alumina |
| US3859427A (en) * | 1969-11-10 | 1975-01-07 | Aluminum Co Of America | Production of beta alumina |
| US3715194A (en) * | 1970-10-29 | 1973-02-06 | Union Carbide Corp | Melt grown alumina crystals and process therefor |
| US3795723A (en) * | 1972-03-29 | 1974-03-05 | Shell Oil Co | Beta alumina production |
-
1974
- 1974-07-26 US US492279A patent/US3917462A/en not_active Expired - Lifetime
-
1975
- 1975-07-24 CA CA232,155A patent/CA1055816A/en not_active Expired
- 1975-07-25 FR FR7523318A patent/FR2279461A1/fr active Granted
- 1975-07-25 JP JP50090348A patent/JPS5137900A/ja active Granted
- 1975-07-25 GB GB31141/75A patent/GB1516327A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2532653B2 (de) | 1977-03-10 |
| JPS5137900A (en) | 1976-03-30 |
| GB1516327A (en) | 1978-07-05 |
| FR2279461A1 (fr) | 1976-02-20 |
| DE2532653A1 (de) | 1976-02-05 |
| CA1055816A (en) | 1979-06-05 |
| US3917462A (en) | 1975-11-04 |
| FR2279461B1 (enExample) | 1978-09-22 |