CA1051982A - Inverter stage in an integrated injection logic - Google Patents
Inverter stage in an integrated injection logicInfo
- Publication number
- CA1051982A CA1051982A CA256,413A CA256413A CA1051982A CA 1051982 A CA1051982 A CA 1051982A CA 256413 A CA256413 A CA 256413A CA 1051982 A CA1051982 A CA 1051982A
- Authority
- CA
- Canada
- Prior art keywords
- transistor
- region
- collector
- lateral
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
Landscapes
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2530288A DE2530288C3 (de) | 1975-07-07 | 1975-07-07 | Inverter in integrierter Injektionslogik |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1051982A true CA1051982A (en) | 1979-04-03 |
Family
ID=5950887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA256,413A Expired CA1051982A (en) | 1975-07-07 | 1976-07-06 | Inverter stage in an integrated injection logic |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4131806A (show.php) |
| CA (1) | CA1051982A (show.php) |
| CH (1) | CH609171A5 (show.php) |
| DE (1) | DE2530288C3 (show.php) |
| FR (1) | FR2317771A1 (show.php) |
| GB (1) | GB1551760A (show.php) |
| IT (1) | IT1066959B (show.php) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4156246A (en) * | 1977-05-25 | 1979-05-22 | Bell Telephone Laboratories, Incorporated | Combined ohmic and Schottky output transistors for logic circuit |
| JPS56131233A (en) * | 1980-03-18 | 1981-10-14 | Hitachi Ltd | Logic circuit |
| US4567500A (en) * | 1981-12-01 | 1986-01-28 | Rca Corporation | Semiconductor structure for protecting integrated circuit devices |
| US5068702A (en) * | 1986-03-31 | 1991-11-26 | Exar Corporation | Programmable transistor |
| US5122684A (en) * | 1991-03-04 | 1992-06-16 | Motorola, Inc. | Current-injection logic (I2 L) driver for increasing fan-out |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3569800A (en) * | 1968-09-04 | 1971-03-09 | Ibm | Resistively isolated integrated current switch |
| US3573573A (en) * | 1968-12-23 | 1971-04-06 | Ibm | Memory cell with buried load impedances |
| US3879745A (en) * | 1969-11-11 | 1975-04-22 | Philips Corp | Semiconductor device |
| DE2021824C3 (de) * | 1970-05-05 | 1980-08-14 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithische Halbleiterschaltung |
| US3654530A (en) * | 1970-06-22 | 1972-04-04 | Ibm | Integrated clamping circuit |
| US3631309A (en) * | 1970-07-23 | 1971-12-28 | Semiconductor Elect Memories | Integrated circuit bipolar memory cell |
| GB1507299A (en) * | 1974-03-26 | 1978-04-12 | Signetics Corp | Integrated semiconductor devices |
| DE2426447C2 (de) * | 1974-05-31 | 1982-05-27 | Ibm Deutschland Gmbh, 7000 Stuttgart | Komplementäre Transistorschaltung zur Durchführung boole'scher Verknüpfungen |
| NL7414273A (nl) * | 1974-11-01 | 1976-05-04 | Philips Nv | Logische schakeling. |
-
1975
- 1975-07-07 DE DE2530288A patent/DE2530288C3/de not_active Expired
-
1976
- 1976-06-01 CH CH683276A patent/CH609171A5/xx not_active IP Right Cessation
- 1976-06-28 US US05/700,534 patent/US4131806A/en not_active Expired - Lifetime
- 1976-06-29 FR FR7619764A patent/FR2317771A1/fr active Granted
- 1976-07-02 IT IT24958/76A patent/IT1066959B/it active
- 1976-07-06 GB GB28002/76A patent/GB1551760A/en not_active Expired
- 1976-07-06 CA CA256,413A patent/CA1051982A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH609171A5 (show.php) | 1979-02-15 |
| FR2317771A1 (fr) | 1977-02-04 |
| GB1551760A (en) | 1979-08-30 |
| DE2530288A1 (de) | 1977-01-13 |
| IT1066959B (it) | 1985-03-12 |
| DE2530288C3 (de) | 1982-02-18 |
| FR2317771B1 (show.php) | 1980-08-22 |
| US4131806A (en) | 1978-12-26 |
| DE2530288B2 (de) | 1981-05-27 |
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