CA1043466A - Thyristor and method of its manufacture - Google Patents
Thyristor and method of its manufactureInfo
- Publication number
- CA1043466A CA1043466A CA229,594A CA229594A CA1043466A CA 1043466 A CA1043466 A CA 1043466A CA 229594 A CA229594 A CA 229594A CA 1043466 A CA1043466 A CA 1043466A
- Authority
- CA
- Canada
- Prior art keywords
- electrode
- emitter
- zone
- auxiliary
- emitter electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000004922 lacquer Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- IZQZNLBFNMTRMF-UHFFFAOYSA-N acetic acid;phosphoric acid Chemical compound CC(O)=O.OP(O)(O)=O IZQZNLBFNMTRMF-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Abstract
ABSTRACT
In thyristors with current-amplifying auxiliary structures the auxiliary emitter electrodes cannot be allowed to be contacted by the contact electrode. Therefore it is pro-posed that the auxiliary emitter electrode be made thinner than the electrode of the main emitter. It is thus possible to use simple contact electrodes which are flat on their sides facing the semiconductor d element. Three simple processes are provided for the production of the auxiliary emitter electrodes.
In thyristors with current-amplifying auxiliary structures the auxiliary emitter electrodes cannot be allowed to be contacted by the contact electrode. Therefore it is pro-posed that the auxiliary emitter electrode be made thinner than the electrode of the main emitter. It is thus possible to use simple contact electrodes which are flat on their sides facing the semiconductor d element. Three simple processes are provided for the production of the auxiliary emitter electrodes.
Description
~ he pre~ent invention relate~ to thyristors of the type compri~ing a semiconductor body which possesses an emitter : zone on a ~urface of the body at least partially covered by an . emitter electrode, a basé zone which lies beneath the emitter i 5 zone, but appears at the surface of the body and is th~re.con-ne.cted to a control electrode, a contact electrode supported on the emitter electrode and having a flat face towards the . semiconductor body, and an auxiliary emitter zone which i~
.~ arranged between the control electrode and the emitter electrode i 10 and i~ provided with an auY`iliary emitter electrode.
In combination with the other zones of the ~emiconductor body, the auxiliary emitter zone has the function of amplifying : a control current fed into the.de~ice through the control electrode. ~he control current flow3 from the control electrode into the base zone and thence to the auxiliary emitter zone. ~he . latter in~ects charge carriers into the ba~e zone, a~ a result of . which the control current i~ amplified through the known feedback mechanism in a four-layer structure and flows through the base zone as an amplified control current to the emitter zone o~ the . 20 thyristor.
~ hyristors are generally traversed by high currents and are therefore contacted by means of a contact electrode having a large area arranged on the emitter electrode and projecting . beybnd this electrode. In order that the function of the current-ampliiying auxiliary emitter zone should be retained, the latter must not come into electrical contact with the contact electrode.
It has therefore been proposed to displace both the auxiliary : -emitter zone and the auxiliary emitter electrode into the ba~e of a pit provided in the ~emiconductor body so that the face of the .~ :
co~tact electrode facing towards the semico~auctor element can be flat. ~his solut1on i8 however extremely complicated ~ince it i8 ~irst nece~sary to produce ~uch a pit and the base of thi~ pit ; 2 ~ .
, , .
:, , , , - . : , , . .,. ~ , . . .
1()43466 must t~en be metallised.
It is an object of the present invention to provide a thyristor of the type referred to above with which these problems do not occur.
According to the invention, there is provided a thyristor comprising a semiconductor body having an emitter zone in a sur~ace thereof, said emitter zone being at least partially ¢o~ered by an emitter electrode, a base zone extending to said surface and ~rovided with a control electrode, an auxiliary emitter 30ne in said surface between said emitter ~on`e and said ~ontrol ele~rode~ said auxiliary emitter zone being provided with an auxiliary emitter electrode, and a contact electrode supported on said emitter electrode and pro~ecting over ~aid auxiliary emitter electrode, said contact electrode having a 15 flat surface facing said semiconductor body, ~herein, in order --to avoid electrical contact between said auxiliary emitter electrode and said contact electrode, the thicknes~ of said auxiliary emitter electrode i9 less than that of said emitter - electrode 90 that the ~ree surface of said auxiliary emitter is spaced from the surface of said contact electrode facing said ¦ eemiconductor body.
~ he auxiliary emitter electrode can be produced in a relatively simple manner by covering the surface of the semi-Conductor body containing the emitter zone with a metal layer 25 which has a thickness equal to the required thickness of the ~- --emitter electrode, then using a first photo-mask and a fir~t etching process producing the de~ired outllne~ of the emitter electrode and of the auxiliary emitter electrode by etching away unwanted portions of the metal layer, and ~inally using a 3 second photo-mask and a second etching procéss etching away the auxiliary emitter electrode to the required thickness.
. " ' . ' .' ' -. ~ , . . . .
~43466 Alternatively, after thc application of the metal layer, using a first photo-mas~, a first photosensitive lacquer is applied to the metal surface in a pattern corresponding to and covering only the areas of the emitter electrode and of the control electrode, thereafter using a second photo-mask a second pattern photosensitive lacquer is applied to the suxface .
of the metal layer to cover the area of the auxiliary emitter electrode, the second photosen~itive lacquer being removable by a ~olvent which does.not dissolve the first photosensitive la¢quer, thereafter using a first etching process the unmasked regions of the metal layer are etched away, the second photo-sensitive lacquer is removed, and the auxiliary emitter electrode 18 then etched to the required thickness by a second etching process.
In a further simple alternative, the semiconductor body i8 covered with a metal layer of the required thickness of the emitter electrode, then using a fixst photo-mask and a first etching process a pit whose area corre~ponds to that of the ausiliaxy emitter electrode is etched into this metal layer, to a depth such that the residual metal layer below the pit has the required thickness of the auxiliary emitter electrode, and that then the portiong o~ the metal layer lying betwee~ the emitter electrode and the pit are etched away using a second photo-mask :~
and a second etching process. - : -- , The lnvention will now be fuxther described with reference to the dxanings, in which ~
~igure 1 is a schematic side-sectional view of a thyristor accordlng to the invention;
~igures 2 to 5 are similar schemat$c side-sectional views of one half o~ a semiconductox body to il1ustrate ~uccessive ~tages in a first method of producing the tra~si~tor of ~igure 1 ,~ 'si , , - `
1~)43466 .~igures 6 to 10 are similar views to those o~ ~igure~
.~ arranged between the control electrode and the emitter electrode i 10 and i~ provided with an auY`iliary emitter electrode.
In combination with the other zones of the ~emiconductor body, the auxiliary emitter zone has the function of amplifying : a control current fed into the.de~ice through the control electrode. ~he control current flow3 from the control electrode into the base zone and thence to the auxiliary emitter zone. ~he . latter in~ects charge carriers into the ba~e zone, a~ a result of . which the control current i~ amplified through the known feedback mechanism in a four-layer structure and flows through the base zone as an amplified control current to the emitter zone o~ the . 20 thyristor.
~ hyristors are generally traversed by high currents and are therefore contacted by means of a contact electrode having a large area arranged on the emitter electrode and projecting . beybnd this electrode. In order that the function of the current-ampliiying auxiliary emitter zone should be retained, the latter must not come into electrical contact with the contact electrode.
It has therefore been proposed to displace both the auxiliary : -emitter zone and the auxiliary emitter electrode into the ba~e of a pit provided in the ~emiconductor body so that the face of the .~ :
co~tact electrode facing towards the semico~auctor element can be flat. ~his solut1on i8 however extremely complicated ~ince it i8 ~irst nece~sary to produce ~uch a pit and the base of thi~ pit ; 2 ~ .
, , .
:, , , , - . : , , . .,. ~ , . . .
1()43466 must t~en be metallised.
It is an object of the present invention to provide a thyristor of the type referred to above with which these problems do not occur.
According to the invention, there is provided a thyristor comprising a semiconductor body having an emitter zone in a sur~ace thereof, said emitter zone being at least partially ¢o~ered by an emitter electrode, a base zone extending to said surface and ~rovided with a control electrode, an auxiliary emitter 30ne in said surface between said emitter ~on`e and said ~ontrol ele~rode~ said auxiliary emitter zone being provided with an auxiliary emitter electrode, and a contact electrode supported on said emitter electrode and pro~ecting over ~aid auxiliary emitter electrode, said contact electrode having a 15 flat surface facing said semiconductor body, ~herein, in order --to avoid electrical contact between said auxiliary emitter electrode and said contact electrode, the thicknes~ of said auxiliary emitter electrode i9 less than that of said emitter - electrode 90 that the ~ree surface of said auxiliary emitter is spaced from the surface of said contact electrode facing said ¦ eemiconductor body.
~ he auxiliary emitter electrode can be produced in a relatively simple manner by covering the surface of the semi-Conductor body containing the emitter zone with a metal layer 25 which has a thickness equal to the required thickness of the ~- --emitter electrode, then using a first photo-mask and a fir~t etching process producing the de~ired outllne~ of the emitter electrode and of the auxiliary emitter electrode by etching away unwanted portions of the metal layer, and ~inally using a 3 second photo-mask and a second etching procéss etching away the auxiliary emitter electrode to the required thickness.
. " ' . ' .' ' -. ~ , . . . .
~43466 Alternatively, after thc application of the metal layer, using a first photo-mas~, a first photosensitive lacquer is applied to the metal surface in a pattern corresponding to and covering only the areas of the emitter electrode and of the control electrode, thereafter using a second photo-mask a second pattern photosensitive lacquer is applied to the suxface .
of the metal layer to cover the area of the auxiliary emitter electrode, the second photosen~itive lacquer being removable by a ~olvent which does.not dissolve the first photosensitive la¢quer, thereafter using a first etching process the unmasked regions of the metal layer are etched away, the second photo-sensitive lacquer is removed, and the auxiliary emitter electrode 18 then etched to the required thickness by a second etching process.
In a further simple alternative, the semiconductor body i8 covered with a metal layer of the required thickness of the emitter electrode, then using a fixst photo-mask and a first etching process a pit whose area corre~ponds to that of the ausiliaxy emitter electrode is etched into this metal layer, to a depth such that the residual metal layer below the pit has the required thickness of the auxiliary emitter electrode, and that then the portiong o~ the metal layer lying betwee~ the emitter electrode and the pit are etched away using a second photo-mask :~
and a second etching process. - : -- , The lnvention will now be fuxther described with reference to the dxanings, in which ~
~igure 1 is a schematic side-sectional view of a thyristor accordlng to the invention;
~igures 2 to 5 are similar schemat$c side-sectional views of one half o~ a semiconductox body to il1ustrate ~uccessive ~tages in a first method of producing the tra~si~tor of ~igure 1 ,~ 'si , , - `
1~)43466 .~igures 6 to 10 are similar views to those o~ ~igure~
2 to 5 to illustrate successive stage3 in a second method of producing the thyristor of Figure 1; and Figures 11 to 14 are similar views to those of Figures 2 to 10 to illustrate successive stage~ in a thixd method of producing the thyristor of ~igure 1.
~he semiconductor element shown in Figure 1 comprises a 9emiconductor body of circular plan with ~our zones of alter-nating conductivity types, namely an emitter zone 1, a ba~e zone 2 and two further zones 3 and 4, and also an aù~iliary emitter zone 5, which is of the same conductivity type as the emitter zone 1 and lies in the same surface of the semiconductor body a~ the emitter zone. ~he emitter zone, which is annular in shape is covered by an emitter electrode 6 whilst the auxiliary emitter zone 5, which i9 also annular in shape, is electrically ~ ~ -connected to an annular auxiliary emitter electrode 7, whilst ~
. the base zone 2 is electrically connected to a central control .; `
electrode 8.. ~he auxiliary emitter electrode 7;is also electrically connected to the base zone 2 at its outer periphery facing the emitter electrode 6. A large-area contact electrode ~ ~
9 which contacts the emitter electrode 6 is supported on this : ~-electrode but pro~ects inwardly over the auxiliary emitter . ;.~.-.
electrode 7. Contact with the auxiliary emitter electrode 7 is avoided by making the latter thinner than the emitter ~ .-~
electrode 6 90 that its upper sur~ace lies at a lower level than the upper surface of the emitter electrode 6. ~he lower .
~urfaces of the two electrodes lie at the same 1evel. ~he .~ :
30 auxiliary emitter electrode 7 may, for example, ~e 15 ~ thick, .. ~ -whilst the emitter electrode 6 has a thickness o~, ~or example, 30 ~.
.
'''' ., . - .
1~43466 ~he thicknes~ of the auxiliary emitter electrode 7 which i~ less than that of the emitter electrode 6 can advan-tageously be achieved by etching making use of the known photo-masking technique3.
~hree particularly simple processes for the production of the electrodes of the thyristor of Figure 1 will now be described with reference to Figures 2 to 5, Figures 6 to 10, and Figure3 11 to 14 respecti~ely. In Figures 2 to 4, the semiconductor body of Figure 1 provided with ~ones 1 to 5 is shown in a simplified form at 10. ~o the semiconductor body 10 there is first applied a metal layer 11 which may consi~t, for example, of aluminium or ~ilver-plated aluminium. ~he metal layer may be, for example, 30 ~ thick. Using the known photo-mask technique, a photo-lacquer pattern having layers 12, 13 and 14 is produced on the metal layer. ~he lacquer layer 12 corresponds in shape and area to the emitter electrode 6, whilst the shape and area of the lacquer layer 13 correspond to tho~e of the auxiliary emitter electrode 7 and the shape and area of the lacquer layer 14 correspond to those of the control electrode 8. ~he metal layer -~
11 is now etched away at the areas not covered with lacquer down to the surface of the semiconductor body 10, as shown in Figure 3.-~acquer layer~ 15 and 16 are then applied to the electrodes 6 and 8 by mean~ of a ~econd photolacquering step. Finally, (~igure 4) the auxiliary emitter electrode 7 is etched away to the desired thickness, for example, 15 ~ t~igure 5). After the removal of the lacquer layers 15 and 16 the semiconductor element is con-tacted with the contact electrode 9 in known manner.
The alternative electrode production process illustrated in Figures 6 to 10 basically differs from that illustrated in Figure~ 2 to 5 only in that the area of the auxiliary emitter electrode 7 i~ covered with a lacguer layer 18 which consists of a different photo-lacquer v~hich can be dissolved by a ~olvent ~)434~;6 which does not dissolve the lacquer layers 12 and 14. ~he lacquer layer~ ~2 and 14 can, for example, be made of the known negative lacquer R~R manufactured by Kodak which is soluble in ~he known lacquer solvents, whilst the lacquer layer 18 can be made of a kno~n positive lacquer, e.g. that known a~
v ~ 1350H made by Shipley, which is soluble, for example, in acetone. After the application of the lacquer layers 12 and 14 (~igure 6) and the lacquer layer 18 (Figure 7), the metal layer 11 is etched away at its exposed areas down to the semiconductor body 10 (Figure 8). ~he lacquer layer 18 is then removed without affecting the layers 12 and 14, an~ the auxiliary emitter electrode 7 is etched to the required height of, for e~ample, t5 ~ (Figure 9). After the removal of the lacquer layers 12 and 14 the semiconductor element is contacted in known manner with the contact electrode 9.
In a further proce~ illu~trated in Figures 11 to 14, the metal layer 11 is covered with lacquer layers 20 and 21 which leave exposed between them an area whose shape corresponds to the shape of the auxiliary emitter electrode. ~hen, using, for example, a phosphoric acid - acetic acid mixture, a pit 22 is etched into the metal layer 11 to such a depth that the remaining ~ -metal layer below the pit corresponds to the required thickness of the auxiliary emitter electrode. ~he layers 20 and 21 are then removed and photo-lacqùer layers 24 and 25 whose 3hape and area correspond to those of the emitter electrode and the control electrode respectively are applied to the me-tal surface.
At the same time, the base of the pit 22 i~ covered with a --lacquer layer 23. ~he metal layer between the pit and the lacquer layers 24 and 25 is then etched away down to the semiconductor body 10. After the removal of the layer~ 23, 24 and 25, the ~-semiconductor element i8 contacted in known manner with the contact electrode 9, ~ t~ 7 ,. . , .. ' '' '"' ..
~he semiconductor element shown in Figure 1 comprises a 9emiconductor body of circular plan with ~our zones of alter-nating conductivity types, namely an emitter zone 1, a ba~e zone 2 and two further zones 3 and 4, and also an aù~iliary emitter zone 5, which is of the same conductivity type as the emitter zone 1 and lies in the same surface of the semiconductor body a~ the emitter zone. ~he emitter zone, which is annular in shape is covered by an emitter electrode 6 whilst the auxiliary emitter zone 5, which i9 also annular in shape, is electrically ~ ~ -connected to an annular auxiliary emitter electrode 7, whilst ~
. the base zone 2 is electrically connected to a central control .; `
electrode 8.. ~he auxiliary emitter electrode 7;is also electrically connected to the base zone 2 at its outer periphery facing the emitter electrode 6. A large-area contact electrode ~ ~
9 which contacts the emitter electrode 6 is supported on this : ~-electrode but pro~ects inwardly over the auxiliary emitter . ;.~.-.
electrode 7. Contact with the auxiliary emitter electrode 7 is avoided by making the latter thinner than the emitter ~ .-~
electrode 6 90 that its upper sur~ace lies at a lower level than the upper surface of the emitter electrode 6. ~he lower .
~urfaces of the two electrodes lie at the same 1evel. ~he .~ :
30 auxiliary emitter electrode 7 may, for example, ~e 15 ~ thick, .. ~ -whilst the emitter electrode 6 has a thickness o~, ~or example, 30 ~.
.
'''' ., . - .
1~43466 ~he thicknes~ of the auxiliary emitter electrode 7 which i~ less than that of the emitter electrode 6 can advan-tageously be achieved by etching making use of the known photo-masking technique3.
~hree particularly simple processes for the production of the electrodes of the thyristor of Figure 1 will now be described with reference to Figures 2 to 5, Figures 6 to 10, and Figure3 11 to 14 respecti~ely. In Figures 2 to 4, the semiconductor body of Figure 1 provided with ~ones 1 to 5 is shown in a simplified form at 10. ~o the semiconductor body 10 there is first applied a metal layer 11 which may consi~t, for example, of aluminium or ~ilver-plated aluminium. ~he metal layer may be, for example, 30 ~ thick. Using the known photo-mask technique, a photo-lacquer pattern having layers 12, 13 and 14 is produced on the metal layer. ~he lacquer layer 12 corresponds in shape and area to the emitter electrode 6, whilst the shape and area of the lacquer layer 13 correspond to tho~e of the auxiliary emitter electrode 7 and the shape and area of the lacquer layer 14 correspond to those of the control electrode 8. ~he metal layer -~
11 is now etched away at the areas not covered with lacquer down to the surface of the semiconductor body 10, as shown in Figure 3.-~acquer layer~ 15 and 16 are then applied to the electrodes 6 and 8 by mean~ of a ~econd photolacquering step. Finally, (~igure 4) the auxiliary emitter electrode 7 is etched away to the desired thickness, for example, 15 ~ t~igure 5). After the removal of the lacquer layers 15 and 16 the semiconductor element is con-tacted with the contact electrode 9 in known manner.
The alternative electrode production process illustrated in Figures 6 to 10 basically differs from that illustrated in Figure~ 2 to 5 only in that the area of the auxiliary emitter electrode 7 i~ covered with a lacguer layer 18 which consists of a different photo-lacquer v~hich can be dissolved by a ~olvent ~)434~;6 which does not dissolve the lacquer layers 12 and 14. ~he lacquer layer~ ~2 and 14 can, for example, be made of the known negative lacquer R~R manufactured by Kodak which is soluble in ~he known lacquer solvents, whilst the lacquer layer 18 can be made of a kno~n positive lacquer, e.g. that known a~
v ~ 1350H made by Shipley, which is soluble, for example, in acetone. After the application of the lacquer layers 12 and 14 (~igure 6) and the lacquer layer 18 (Figure 7), the metal layer 11 is etched away at its exposed areas down to the semiconductor body 10 (Figure 8). ~he lacquer layer 18 is then removed without affecting the layers 12 and 14, an~ the auxiliary emitter electrode 7 is etched to the required height of, for e~ample, t5 ~ (Figure 9). After the removal of the lacquer layers 12 and 14 the semiconductor element is contacted in known manner with the contact electrode 9.
In a further proce~ illu~trated in Figures 11 to 14, the metal layer 11 is covered with lacquer layers 20 and 21 which leave exposed between them an area whose shape corresponds to the shape of the auxiliary emitter electrode. ~hen, using, for example, a phosphoric acid - acetic acid mixture, a pit 22 is etched into the metal layer 11 to such a depth that the remaining ~ -metal layer below the pit corresponds to the required thickness of the auxiliary emitter electrode. ~he layers 20 and 21 are then removed and photo-lacqùer layers 24 and 25 whose 3hape and area correspond to those of the emitter electrode and the control electrode respectively are applied to the me-tal surface.
At the same time, the base of the pit 22 i~ covered with a --lacquer layer 23. ~he metal layer between the pit and the lacquer layers 24 and 25 is then etched away down to the semiconductor body 10. After the removal of the layer~ 23, 24 and 25, the ~-semiconductor element i8 contacted in known manner with the contact electrode 9, ~ t~ 7 ,. . , .. ' '' '"' ..
Claims (4)
PROPERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. A thyristor comprising a semiconductor body having an emitter zone in a surface thereof, said emitter zone being at least partially covered by an emitter electrode, a base zone extending to said surface and provided with a control electrode, an auxiliary emitter zone in said surface between said emitter zone and said control electrode, said auxiliary emitter zone being provided with an auxiliary emitter electrode, and a contact electrode supported on said emitter electrode and projecting over said auxiliary emitter electrode, said contact electrode having a flat surface facing said semi-conductor body, wherein, in order to avoid electrical contact between said auxiliary emitter electrode and said contact electrode, the thickness of said auxiliary emitter electrode is less than that of said emitter electrode so that the free surface of said auxiliary emitter is spaced from the surface of said contact electrode facing said semiconductor body.
2. A method of producing a thyristor as claimed in claim 1, comprising the steps of providing a semiconductor body containing, in the surface of the body, an emitter zone and an auxiliary emitter zone and extending to the surface of the body, a base zone, the auxiliary emitter zone being between the emitter zone and the base zone, covering the surface of the semiconductor body with a metal layer having a thickness equal to the required thickness of an emitter electrode, in a first photo-etching step etching away portions of said metal layer to form said emitter electrode, which at least partly covers the emitter zone, and to form a control electrode on said base zone, and a residual portion of said metal layer on the auxiliary emitter zone corresponding in shape and area to an auxiliary emitter electrode, thereafter in a second photo-etching step etching away said residual portion to the required thickness of the auxiliary emitter electrode, and thereafter apply-ing a contact electrode to said emitter electrode the contact electrode pro-jecting over the auxiliary emitter electrode.
3. A method of producing a thyristor as claimed in claim 1, comprising the steps of providing a semiconductor body containing in the surface of the body, an emitter zone and an auxiliary emitter zone and extending to the surface of the body, a base zone, the auxiliary emitter zone being between the emitter zone and the base zone, covering the surface of the semiconductor body with a metal layer having a thickness equal to the required thickness of an emitter electrode, in a first photo-etching step etching into the surface of said metal layer a pit having a base corresponding in shape and size to an auxiliary emitter electrode and a depth such that the thickness of the metal layer remaining below said pit equals the required thickness of said auxiliary emitter electrode, thereafter in a second photo-etching step etching away portions of said metal layer to form said emitter electrode, which at least partly covers the emitter zone, to form said control electrode on said base zone and to form on the auxiliary emitter zone said auxiliary emitter elec-trode, and thereafter applying a contact electrode to said emitter electrode, the contact electrode projecting over the auxiliary emitter electrode.
4. A method of producing a thyristor as claimed in claim 1, comprising the steps of providing a semiconductor body containing, in the surface of the body, an emitter zone and an auxiliary emitter zone and extending to the sur-face of the body, a base zone, the auxiliary emitter zone being between the emitter zone and the base zone, covering the surface of the semiconductor body with a metal layer having a thickness equal to the required thickness of an emitter electrode, covering only those areas of the surface of said metal layer corresponding to said emitter electrode and a control electrode with a first photo-lacquer, covering only an area of the surface of said metal layer corresponding to an auxiliary emitter electrode with a second photo-lacquer which is soluble in a solvent in which said first photo-lacquer is insoluble, etching away uncovered portions of said metal layer in a first etching step to form said emitter electrode which at least partly covers the emitter zone and to form said control electrode on the base zone and to form on the auxiliary emitter zone said auxiliary emitter electrode, removing said second photo-lacquer by treatment with said solvent, etching away the residual metal layer at the area corresponding to said auxiliary emitter electrode to a thickness equal to the required thickness of said auxiliary emitter electrode in a second etching step, removing said first photo-lacquer, and thereafter applying a contact electrode to said emitter electrode, the contact electrode projecting over the auxiliary emitter electrode.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2431506A DE2431506C3 (en) | 1974-07-01 | 1974-07-01 | Method of manufacturing a thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1043466A true CA1043466A (en) | 1978-11-28 |
Family
ID=5919388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA229,594A Expired CA1043466A (en) | 1974-07-01 | 1975-06-18 | Thyristor and method of its manufacture |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5119485A (en) |
| CA (1) | CA1043466A (en) |
| CH (1) | CH585969A5 (en) |
| DE (1) | DE2431506C3 (en) |
| FR (1) | FR2277435A1 (en) |
| GB (1) | GB1504035A (en) |
| IT (1) | IT1039428B (en) |
| SE (1) | SE408353B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3232837A1 (en) * | 1982-09-03 | 1984-03-08 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING A 2-LEVEL METALIZATION FOR SEMICONDUCTOR COMPONENTS, IN PARTICULAR FOR PERFORMANCE SEMICONDUCTOR COMPONENTS LIKE THYRISTORS |
| DE3629963A1 (en) * | 1986-09-03 | 1988-03-10 | Menschner Maschf Johannes | DEVICE FOR CONTINUOUSLY DETECTING FABRICS, KNITTED AND THE LIKE |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2254879B1 (en) * | 1973-12-12 | 1977-09-23 | Alsthom Cgee |
-
1974
- 1974-07-01 DE DE2431506A patent/DE2431506C3/en not_active Expired
-
1975
- 1975-04-29 GB GB17880/75A patent/GB1504035A/en not_active Expired
- 1975-06-18 CA CA229,594A patent/CA1043466A/en not_active Expired
- 1975-06-18 CH CH791975A patent/CH585969A5/xx not_active IP Right Cessation
- 1975-06-24 JP JP50079224A patent/JPS5119485A/ja active Pending
- 1975-06-27 FR FR7520327A patent/FR2277435A1/en active Granted
- 1975-06-27 IT IT24850/75A patent/IT1039428B/en active
- 1975-07-01 SE SE7507559A patent/SE408353B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2431506A1 (en) | 1976-01-22 |
| FR2277435A1 (en) | 1976-01-30 |
| SE408353B (en) | 1979-06-05 |
| SE7507559L (en) | 1976-01-02 |
| DE2431506B2 (en) | 1978-10-12 |
| JPS5119485A (en) | 1976-02-16 |
| FR2277435B1 (en) | 1982-09-17 |
| DE2431506C3 (en) | 1979-06-13 |
| CH585969A5 (en) | 1977-03-15 |
| IT1039428B (en) | 1979-12-10 |
| GB1504035A (en) | 1978-03-15 |
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